AON2401 8V P-Channel MOSFET General Description Product Summary The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-2.5V) -8V -8A VDS RDS(ON) (at VGS =-2.5V) < 22mΩ RDS(ON) (at VGS =-1.8V) < 28mΩ RDS(ON) (at VGS =-1.5V) < 36mΩ RDS(ON) (at VGS =-1.2V) < 53mΩ DFN 2x2B Top View S D Bottom View D D D Pin 1 S D G Pin 1 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : April. 2012 Steady-State A A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±5 -6 IDM TA=25°C Units V -8 ID TA=70°C C Maximum -8 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±5V Gate Threshold Voltage VDS=VGS, ID=-250µA -0.15 ID(ON) On state drain current VGS=-2.5V, VDS=-5V -32 ±100 nA -0.65 V 18 22 24.5 32 VGS=-1.8V, ID=-6A 22.6 28 VGS=-1.5V, ID=-4A 27.7 36 mΩ VGS=-1.2V, ID=-2A 39 53 mΩ 33 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-4V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA -0.4 VGS=-2.5V, ID=-8A Coss Units V -1 VGS(th) Static Drain-Source On-Resistance Max -8 VDS=-8V, VGS=0V IGSS RDS(ON) Typ A -0.55 mΩ S -1 V -4 A 1465 pF 345 pF 235 pF 10 Ω 12.5 VGS=-4.5V, VDS=-4V, ID=-8A mΩ 18 nC 1.5 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time 28 ns tD(off) Turn-Off DelayTime 99 ns tf Turn-Off Fall Time 43 ns ns nC VGS=-4.5V, VDS=-4V, RL=0.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 23 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 7 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : April. 2012 www.aosmd.com Page 2 of 5 AON2401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 -5V VDS=-5V -2V -2.5V 25 30 20 -ID(A) -ID (A) -1.8V 20 15 -1.5V 10 125°C 10 25°C 5 VGS=-1.2V 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 1.6 RDS(ON) (mΩ Ω) 40 VGS=-1.5V VGS=-1.8V 30 20 VGS=-2.5V 10 Normalized On-Resistance VGS=-1.2V 1.4 VGS=-2.5V ID=-8A VGS=-1.8V ID=-6A 1.2 1 VGS=-1.5V ID=-4A 17 5 2 VGS=-1.2V ID=-2A10 0.8 0 0 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 50 ID=-8A 1.0E+01 40 40 125°C 30 125°C -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 20 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 0 1.0E-05 0 2 3 4 5 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : April. 2012 1 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2000 VDS=-4V ID=-8A Ciss 1600 Capacitance (pF) -VGS (Volts) 4 3 2 1200 800 Coss 1 400 0 0 Crss 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 10µs 10µs 100µs RDS(ON) limited 1ms 10ms 1.0 DC TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 160 Power (W) -ID (Amps) 8 200 100.0 10.0 2 4 6 -VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Ambient (Note H) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=80°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : April. 2012 www.aosmd.com Page 4 of 5 AON2401 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0 : April. 2012 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5