BZT52H series Single Zener diodes in a SOD123F package Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Total power dissipation: ≤ 830 mW Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Small plastic package suitable for surface-mounted design Low differential resistance AEC-Q101 qualified 1.3 Applications General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VF Ptot Conditions Min Typ Max Unit forward voltage IF = 10 mA [1] - - 0.9 V total power dissipation Tamb ≤ 25 °C [2] - - 375 mW [3] - - 830 mW [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 3. Ordering information Table 3. Ordering information Type number Package BZT52H-B2V4 to BZT52H-C75[1] [1] Name Description Version - plastic surface-mounted package; 2 leads SOD123F The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code Type number Marking code Type number Marking code Type number Marking code BZT52H-B2V4 DC BZT52H-B15 DX BZT52H-C2V4 B3 BZT52H-C15 BN BZT52H-B2V7 DD BZT52H-B16 DY BZT52H-C2V7 B4 BZT52H-C16 BP BZT52H-B3V0 DE BZT52H-B18 DZ BZT52H-C3V0 B5 BZT52H-C18 BQ BZT52H-B3V3 DF BZT52H-B20 E1 BZT52H-C3V3 B6 BZT52H-C20 BR BZT52H-B3V6 DG BZT52H-B22 E2 BZT52H-C3V6 B7 BZT52H-C22 BS BZT52H-B3V9 DH BZT52H-B24 E3 BZT52H-C3V9 B8 BZT52H-C24 BT BZT52H-B4V3 DJ BZT52H-B27 E4 BZT52H-C4V3 B9 BZT52H-C27 BU BZT52H-B4V7 DK BZT52H-B30 E5 BZT52H-C4V7 BA BZT52H-C30 BV BZT52H-B5V1 DL BZT52H-B33 E6 BZT52H-C5V1 BB BZT52H-C33 BW BZT52H-B5V6 DM BZT52H-B36 E7 BZT52H-C5V6 BC BZT52H-C36 BX BZT52H-B6V2 DN BZT52H-B39 E8 BZT52H-C6V2 BD BZT52H-C39 BY BZT52H-B6V8 DP BZT52H-B43 E9 BZT52H-C6V8 BE BZT52H-C43 BZ BZT52H-B7V5 DQ BZT52H-B47 EA BZT52H-C7V5 BF BZT52H-C47 C1 BZT52H-B8V2 DR BZT52H-B51 EB BZT52H-C8V2 BG BZT52H-C51 C2 BZT52H-B9V1 DS BZT52H-B56 EC BZT52H-C9V1 BH BZT52H-C56 C3 BZT52H-B10 DT BZT52H-B62 ED BZT52H-C10 BJ BZT52H-C62 C4 BZT52H-B11 DU BZT52H-B68 EE BZT52H-C11 BK BZT52H-C68 C5 BZT52H-B12 DV BZT52H-B75 EF BZT52H-C12 BL BZT52H-C75 C6 BZT52H-B13 DW - - BZT52H-C13 BM - - BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IF Conditions Min Max Unit forward current - 250 mA IZSM non-repetitive peak reverse current - see Table 8, 9 and 10 PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation [2] - 375 mW [3] - 830 mW Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] tp = 100 μs; square wave; Tj = 25 °C prior to surge. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) BZT52H_SER Product data sheet Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - - 330 K/W [2] - - 150 K/W [3] - - 70 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Conditions forward voltage VF [1] Parameter [1] IF = 10 mA Min Typ Max Unit - - 0.9 V Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 5 mA Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] Min Max IZ = 1 mA IZ = 5 mA Max VR (V) Min Max Max Max 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.0 500 83 20 1 −3.5 0.0 450 6.0 500 95 10 1 −3.5 0.0 450 6.0 500 95 5 1 −3.5 0.0 450 6.0 500 95 5 1 −3.5 0.0 450 6.0 500 95 3 1 −3.5 0.0 450 6.0 500 95 3 1 −3.5 0.0 450 6.0 500 78 3 2 −3.5 0.2 300 6.0 480 60 2 2 −2.7 1.2 300 6.0 400 40 1 2 −2.0 2.5 300 6.0 150 10 3 4 0.4 3.7 200 6.0 80 8 2 4 1.2 4.5 200 6.0 80 10 1 5 2.5 5.3 150 4.0 80 10 0.7 5 3.2 6.2 150 4.0 2V4 B C 2.2 2.6 2V7 B 2.65 2.75 C 2.5 2.9 3V0 B 2.94 3.06 C 2.8 3.2 3V3 B 3.23 3.37 C 3.1 3.5 3V6 B 3.53 3.67 C 3.4 3.8 3V9 B 3.82 3.98 C 3.7 4.1 4V3 B 4.21 4.39 C 4.0 4.6 4V7 B 4.61 4.79 C 4.4 5.0 5V1 B 5.0 5.2 C 4.8 5.4 5V6 B 5.49 5.71 C 5.2 6.0 6V2 B 6.08 6.32 C 5.8 6.6 6V8 B 6.66 6.94 C 6.4 7.2 7V5 B 7.35 7.65 C 7.0 7.9 8V2 B 8.04 8.36 C 7.7 8.7 BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 …continued Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx 9V1 10 11 12 13 15 16 18 20 22 24 Working voltage VZ (V); IZ = 5 mA Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] Min Max IZ = 1 mA IZ = 5 mA Max VR (V) Min Max Max Max B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.0 C 8.5 9.6 B 9.8 10.2 70 10 0.2 7 4.5 8.0 90 3.0 C 9.4 10.6 B 10.8 11.2 70 10 0.1 8 5.4 9.0 85 2.5 C 10.4 11.6 B 11.8 12.2 90 10 0.1 8 6.0 10.0 85 2.5 C 11.4 12.7 B 12.7 13.3 110 10 0.1 8 7.0 11.0 80 2.5 C 12.4 14.1 B 14.7 15.3 110 15 0.05 10.5 9.2 13.0 75 2.0 C 13.8 15.6 B 15.7 16.3 170 20 0.05 11.2 10.4 14.0 75 1.5 C 15.3 17.1 B 17.6 18.4 170 20 0.05 12.6 12.4 16.0 70 1.5 C 16.8 19.1 B 19.6 20.4 220 20 0.05 14 14.4 18.0 60 1.5 C 18.8 21.2 B 21.6 22.4 220 25 0.05 15.4 16.4 20.0 60 1.25 C 20.8 23.3 B 23.5 24.5 220 30 0.05 16.8 18.4 22.0 55 1.25 C 22.8 25.6 [1] f = 1 MHz; VR = 0 V. [2] tp = 100 μs; Tamb = 25 °C. BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx 27 30 33 36 39 43 47 51 Working voltage VZ (V); IZ = 2 mA Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] Min Max IZ = 1 mA IZ = 5 mA Max VR (V) Min Max Max Max B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 50 1.0 C 25.1 28.9 B 29.4 30.6 250 40 0.05 21 24.4 29.4 50 1.0 C 28.0 32.0 B 32.3 33.7 250 40 0.05 23.1 27.4 33.4 45 0.9 C 31.0 35.0 B 35.3 36.7 250 60 0.05 25.2 30.4 37.4 45 0.8 C 34.0 38.0 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 45 0.7 C 37.0 41.0 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 40 0.6 C 40.0 46.0 B 46.1 47.9 325 90 0.05 32.9 42.0 51.8 40 0.5 C 44.0 50.0 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2 40 0.4 C 48.0 54.0 Temperature coefficient SZ (mV/K); IZ = 5 mA Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] [1] f = 1 MHz; VR = 0 V. [2] tp = 100 μs; Tamb = 25 °C. Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 2 mA Maximum differential resistance rdif (Ω) Min Max IZ = 0.5 mA IZ = 2 mA Max VR (V) Min Max Max Max 54.9 57.1 375 120 0.05 39.2 52.2 63.8 40 0.3 400 140 0.05 43.4 58.8 71.6 35 0.3 400 160 0.05 47.6 65.6 79.8 35 0.25 400 175 0.05 52.5 73.4 88.6 35 0.20 56 B C 52.0 60.0 62 B 60.8 63.2 C 58.0 66.0 68 B 66.6 69.4 C 64.0 72.0 75 B 73.5 76.5 C 70.0 79.0 [1] f = 1 MHz; VR = 0 V. [2] tp = 100 μs; Tamb = 25 °C. BZT52H_SER Product data sheet Reverse current IR (μA) All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package mbg801 103 PZSM (W) mbg781 300 IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 0 0.6 10 tp (ms) 0.8 1 VF (V) (1) Tj = 25 °C (prior to surge) Tj = 25 °C (2) Tj = 150 °C (prior to surge) Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. mbg783 0 Forward current as a function of forward voltage; typical values mbg782 10 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 Fig 3. 0 20 40 IZ (mA) −5 60 0 4 8 12 16 BZT52H-B/C2V4 to BZT52H-B/C4V3 BZT52H-B/C4V7 to BZT52H-B/C12 Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C Temperature coefficient as a function of working current; typical values BZT52H_SER Product data sheet Fig 4. IZ (mA) 20 Temperature coefficient as a function of working current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 7 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.7 1.5 1.2 1.0 1 0.55 0.35 3.6 3.4 2.7 2.5 2 0.70 0.55 Dimensions in mm Fig 5. 0.25 0.10 04-11-29 Package outline SOD123F 10. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package BZT52H-B2V4 to SOD123F BZT52H-C75 [1] BZT52H_SER Product data sheet Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 11. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm. Fig 6. BZT52H_SER Product data sheet Reflow soldering footprint SOD123F All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 12. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BZT52H_SER v.3 20101207 Product data sheet - BZT52H_SER v.2 Modifications: • • • • • Added selection B. Section 1.2 “Features and benefits”: amended. Table 2 “Pinning”: graphic symbol updated. Section 8 “Test information”: added. Section 13 “Legal information”: updated. BZT52H_SER v.2 20091115 Product data sheet - BZT52H_SER v.1 BZT52H_SER v.1 20051222 Product data sheet - - BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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All rights reserved. 11 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BZT52H_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 BZT52H series NXP Semiconductors Single Zener diodes in a SOD123F package 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 December 2010 Document identifier: BZT52H_SER