NTE907 Integrated Circuit Diode Array Description: The NTE907 consists of six ultra–fast, low capacitance diodes on a common monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a common terminal with the substrate. The NTE907 comes in a 12–Lead TO5 type package. Features: D Excellent Reverse Recovery Time: 1ns typ. D Matched Monolithic Construction: VF matched within 5mV D Low Diode Capacitance: CD = 0.65pF typical at VR = –2V Applications: D Balanced Modulators or Demodulators D Ring Modulators D High Speed Diode Gates D Analog Switches Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any one diode unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Total for device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW For TA > 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly 5.7mW/°C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Peak Inverse Voltage, PIV D1 – D5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V Peak Diode–to–Substrate Voltage, VDI for D1–D5 (Pin1, 4, 5, 8, or 12 to Pin10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V, –1V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Peak Recurrent Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Forward Surge Current, IF (Surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Lead Temperature, TL (During soldering 1/16 ±1/32” (1.59 ± 0.79mm) from case for 10sec Max) . . . . . . . . . +265°C Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified) Parameter Symbol DC Forward Voltage Drop VF Test Conditions Min Typ Max Unit IF = 50µA – 0.65 0.69 V IF =1 mA – 0.73 0.78 IF = 3mA – 0.76 0.80 IF = 10mA – 0.81 0.90 DC Reverse Breakdown Voltage V(BR)R IR = –10µA 5 7 – V DC Reverse Breakdown Voltage Between any Diode Unit and Substrate DC Reverse (Leakage) Current V(BR)R IR = –10µA 20 – – V VR = –4V – 0.016 100 nA DC Reverse (Leakage) Current IR Between any Diode Unit and Substrate Magnitude of Diode Offset Voltage |VF1–VF2| (Difference in DC Forward Voltage Drops of any Two Diode Units) Temperature Coefficient of |VF1–VF2| ∆|VF1–VF2| ∆T Temperature Coefficient of Forward ∆VF ∆T Drop DC Forward Voltage Drop for VF Anode–to–Substrate Diode (DS) Reverse Recovery Time trr VR = –10V – 0.022 100 nA IF = 1mA – 0.5 5 mV IF = 1mA – 1 – µV/°C IF = 1mA – –1.9 – mV/°C IF = 1mA – 0.65 – V IF = 10mA, IR = 10mA – 1 – ns Diode Resistance RD f = 1kHz, IF = 1mA 25 30 45 Ω Diode Capacitance CD VR = –2V, IF = 0 – 0.65 – pF Diode–to–Substrate Capacitance CD1 VD1 = +4V, IF = 0 – 3.2 – pF IR Note 1. Characteristics apply for each diode unit, unless otherwise specified. Pin Connection Diagram (Top View) Anode D1 8 Anode D6 9 Cathode D6/ Substrate & Case 10 67 Cathode D1 6 Cathode D2 5 Anode D2 Cathode D5 11 Anode D5 4 Anode D3 12 Anode D4 1 12 3 Cathode D3 Cathode D4 .370 (9.4) Dia Max .335 (8.5) Dia Max .180 (4.57) Max .500 (12.7) Min .018 (0.48) Dia Typ .245 (6.23) Dia 4 3 5 2 6 7 1 8 12 11 10 9