APT20M45SVFR 200V POWER MOS V ® 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested D FREDFET • Surface Mount D3PAK Package • Lower Leakage G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M45SVFR UNIT 200 Volts Drain-Source Voltage 56 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 224 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 56 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 Volts 56 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.045 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5568 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT20M45SVFR Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 4050 4860 Coss Output Capacitance VDS = 25V 980 1375 Crss Reverse Transfer Capacitance f = 1 MHz 300 450 Qg Total Gate Charge VGS = 10V 130 195 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 30 55 45 80 VGS = 15V 12 24 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 14 28 ID = ID [Cont.] @ 25°C 43 70 RG = 1.6Ω 7 14 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 56 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery dv/ 224 (Body Diode) dt (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 200 Tj = 125°C 300 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 0.7 Tj = 125°C 2.4 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 18 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.42 RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 40 VR = 200V. D=0.5 0.05 0.1 0.05 0.01 0.005 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5568 Rev B 0.5 0.2 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 0.83mH, R = 25Ω, Peak I = 56A j G L 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT20M45SVFR 100 VGS=8V, 9V, 10V & 15V 80 6V 60 5.5V 40 5V 20 4.5V 4V 0 TJ = +25°C 80 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125°C 20 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 50 40 30 20 10 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 5V 20 4.5V 4V 1.6 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.4 1.2 VGS=10V VGS=20V 1.0 0.8 0 40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 5.5V 40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5568 Rev B ID, DRAIN CURRENT (AMPERES) 60 6V 60 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) TJ = -55°C 7V 80 0 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 VGS=8V, 9V & 10V 6.5V VGS=15V 6.5V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 100 APT20M45SVFR 300 10,000 50 1mS 10 10mS 5 TC =+25°C TJ =+150°C SINGLE PULSE Ciss 5,000 100µS 100 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 10µS OPERATION HERE LIMITED BY RDS (ON) Coss 1,000 Crss 500 100mS DC 1 100 20 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D VDS=40V 16 VDS=100V 12 VDS=160V 8 4 0 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 300 100 TJ =+150°C TJ =+25°C 50 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 Drain (Heat Sink) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 1.04 (.041) 1.15 (.045) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Revised 8/29/97 13.79 (.543) 13.99 (.551) 0.46 (.018) 0.56 (.022) {3 Plcs} 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 11.51 (.453) 11.61 (.457) Heat Sink (Drain) and Leads are Plated 5.45 (.215) BSC {2 Plcs.} 050-5568 Rev B 13.41 (.528) 13.51 (.532) 5,019,522 5,434,095 5,262,336 5,528,058