RECTRON BAT85 SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Device(TRR<4.0nS) * DO-35 Package (JEDEC) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads are readily solderable DO-35 .022 (0.56) DIA. .018 (0.46) 1.02 (26.0) MIN. .165 (4.2) MAX. .079 (2.0) MAX. DIA. 1.02 (26.0) MIN. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) UNITS SYMBOL BAT85 VR 30 V IF 200 mAmps Maximum Peak Forward Current @ T A =25 OC IFM 300 mAmps Surge Forward Current @ tp<1s,T A =25 OC IFSM 600 mAmps Maximum Power Dissipation @ T A =65 OC PD 200 mW TJ,TSTG -65 to + 125 RATINGS Maximum Forward Comtinuous Reverse Voltage Maximum Forward Comtinuous Current @ T A =25 OC Operating and Storage Temperature Range O C o ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted ) CHARACTERISTICS Reverse breakdown voltage (IR=10µA) Reverse voltage leakage current (VR=25V) SYMBOL MIN. TYP. MAX. UNITS V(BR)R 30 - - V IR - - 2 µA - 0.24 - 0.32 - 0.4 0.5 - (IF=0.1mA) (IF=1mA) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) VF - (IF=30mA) (IF=100mA) V - 0.8 Diode capacitance (VR=1,f=1MHz) CT - - 10 pF Reveres recovery time (IF=IR=10mA,IR=1mA) trr - - 5 nS 2006-3