Zetex FMMT722 Silicon power (switching) transistor Datasheet

SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
DIM
A
B
C
D
F
G
K
L
N
Millimeters
Min
Max
2.67
3.05
1.20
1.40
–
1.10
0.37
0.53
0.085
0.15
NOM 1.9
0.01
0.10
2.10
2.50
NOM 0.95
Inches
Min
Max
0.105 0.120
0.047 0.055
–
0.043
0.0145 0.021
0.0033 0.0059
NOM 0.075
0.0004 0.004
0.0825 0.0985
NOM 0.37
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
ISSUE 3 JUNE 1996
FEATURES
*
625mW POWER DISSIPATION
*
*
*
*
*
IC CONT 2.5A
IC Up To 10A Peak Pulse Current
Excellent hfe Characteristics Up To 10A (pulsed)
Extremely Low Saturation Voltage E.g. 10mV Typ.
Exhibits extremely low equivalent on-resistance; RCE(sat)
E
C
B
DEVICE TYPE
COMPLEMENT
PARTMARKING
RCE(sat)
FMMT717
FMMT617
717
72mΩ at 2.5A
FMMT718
FMMT618
718
97mΩ at 1.5A
FMMT720
FMMT619
720
163mΩ at 1.5A
FMMT722
–
722
-
FMMT723
FMMT624
723
-
ABSOLUTE MAXIMUM RATINGS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
FMMT
717
FMMT
718
FMMT
720
FMMT
722
FMMT
723
UNIT
VCBO
-12
-20
-40
-70
-100
V
Collector-Emitter Voltage
VCEO
-12
-20
-40
-70
-100
V
Emitter-Base Voltage
VEBO
-5
-5
-5
-5
-5
V
Peak Pulse Current**
ICM
-10
-6
-4
-3
-2.5
A
Continuous Collector Current
IC
-2.5
-1.5
-1.5
-1.5
-1
A
Base Current
IB
-500
mA
Power Dissipation at Tamb=25°C*
Ptot
625
mW
Operating and Storage
Temperature Range
Tj:Tstg
-55 to +150
°C
PARAMETER
SYMBOL
Collector-Base Voltage
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3 - 159
FMMT722
FMMT723
FMMT720
TYPICAL CHARACTERISTICS
1
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
0.6
+25°C
PARAMETER
100°C
25°C
100m
-55°C
IC/IB=50
IC/IB=20
IC/IB=10
0.2
0.0
10m
1m
10m
100m
1
10
1mA
10mA
IC - Collector Current (A)
10A
VCE(SAT) vs IC
1.6
VCE=2V
100°C
IC/IB=10
1.0
1.2
25°C
450
0.6
0.2
1.0
10mA
100mA
0
10A
1A
0.0
0.6
1mA
10mA
100mA
1A
Collector Current
Collector Current
hFE vs IC
VBE(SAT) vs IC
-150
-100
-200
V
IC =-100µA
Collector-Emitter
V(BR) CEO
Breakdown Voltage
-70
-125
-100
-160
V
IC =-10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
-5
-8.8
-5
-8.8
V
IE=-100µA
-100
nA
nA
VC B=-60V
VC B=-80V
-100
nA
VEB=-4V
-100
nA
nA
VC ES=-60V
VC ES=-80V
mV
mV
mV
mV
mV
mV
IC =-0.1A, IB=-10mA*
IC =-0.5A, IB=-20mA*
IC =-0.5A, IB=-50mA*
IC =-1A, IB=-100mA*
IC =-1A, IB=-150mA*
IC =-1.5A, IB=-200mA*
IC BO
-100
Emitter Cut-Off
Current
IEBO
-100
Collector Emitter
Cut-Off Current
IC ES
-100
Collector-Emitter
Saturation Voltage
VC E( sat)
10A
Base-Emitter
Saturation Voltage
VBE( sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
Current Transfer
Ratio
hFE
1.0
25°C
0.4
0.1
100mA
1A
-50
-200
-140
-220
-175
-260
-0.94
-1.05
-0.78
-1.0
470
300
450
175
275
40
60
D.C.
1s
100ms
10ms
1ms
100µs
Transition
Frequency
10A
Collector Current
0.01
0.1
1.0
10
100
fT
150
-125
-200
-210
-330
-0.89
-1.0
V
IC =-1A, IB=-150mA*
IC =-1.5A, IB=-200mA*
-0.71
-1.0
V
IC =-1A, VC E=-10V*
IC =-1.5A, VC E=-5V*
475
300
250
450
375
IC =-10mA, VC E=-5V*
IC =-10mA, VC E=-10V*
IC =-0.1A, VC E=-5V*
IC =-0.1A, VC E=-10V*
IC =-0.5A, VC E=-10V*
IC =-1A, VC E=-5V*
IC =-1A, VC E=-10V*
IC =-1.5A, VC E=-5V*
IC =-1.5A, VC E=-10V*
IC =-3A, VC E=-5V*
30
200
150
200
MHz
IC =-50mA, VC E=-10V
f=100MHz
pF
VC B=-10V, f=1MHz
VC C =-50V, IC =-0.5A
IB1 =IB2 =-50mA
Output Capacitance Cob o
14
Turn-On Time
t(on)
40
50
ns
Turn-Off Time
t(off)
700
760
ns
20
13
20
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Safe Operating Area
3 - 164
-80
250
VCE (VOLTS)
VBE(ON) vs IC
-50
300
10
0.2
10mA
-35
-135
300
-55°C
100°C
0.0
1mA
-70
10 SINGLE PULSE TEST Tamb = 25 deg C
VCE=2V
0.8
Collector-Base
V(BR) CBO
Breakdown Voltage
100°C
0.4
0.2
0.0
1mA
TYP.
Collector Cut-Off
Current
MAX.
UNIT CONDITIONS.
MAX. MIN.
25°C
0.6
225
-55°C
FMMT723
TYP.
-55°C
0.8
0.8
0.4
1A
Collector Current
VCE(SAT) v IC
1.0
100mA
FMMT722
MIN.
IC/IB=20
0.4
1.4
SYMBOL
3 - 165
FMMT722
FMMT718
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
0.6
0.6
25°C
0.5
0.5
0.4
0.4
IC/IB=50
0.3
1
100m
IC/IB=5
0.3
10mA
100mA
1A
10A
0.0
1mA
10mA
100mA
1A
Collector Current
VBE(SAT) vs IC
VCE(SAT) vs IC
1.2
VCE=5V
100°C
0.8
0.6
225
-55°C
0.2
0.0
1mA
10mA
100mA
1A
1.4
1.0
25°C
0.8
100°C
0.6
0.4
0.2
0.2
10mA
Collector Current
100mA
1A
10A
10mA
1.4
1A
10A
1A
10A
IC/IB=10
1.2
25°C
1.0
450
-55°C
0.8
-55°C
25°C
0.6
225
100°C
0.4
0.2
0.0
1mA
1.2
100mA
VCE(SAT) vs IC
10mA
100mA
0
10A
1A
0.0
1mA
10mA
100mA
Collector Current
hFE vs IC
VBE(SAT) vs IC
10 SINGLE PULSE TEST Tamb = 25 deg C
VCE=2V
1.0
-55°C
1.0
25°C
-55°C
0.8
0.6
100ms
10ms
1ms
100µs
100°C
0.1
1.0
25°C
D.C.
1s
0.4
100°C
0.4
0.1
D.C.
1s
100ms
10ms
1ms
100µs
0.2
0.2
0.0
1mA
1mA
Collector Current
VCE=2V
VBE(SAT) vs IC
10 SINGLE PULSE TEST Tamb = 25 deg C
0.6
10
Collector Current
VCE=5V
0.8
1
100°C
Collector Current
hFE vs IC
1.0
-55°C
0.4
0.0
1mA
10A
100m
VCE(SAT) v IC
1.2
0.6
0.1
0.0
10m
25°C
-55°C
IC - Collector Current (A)
IC/IB=5
0.8
450
25°C
1m
1m
10A
1.0
1.2
0.4
-55°C
Collector Current
1.6
100°C
0.2
IC/IB=50
IC/IB=30
IC/IB=10
0.1
0.0
1mA
1.0
10m
25°C
0.2
0.1
1.4
0.4
100°C
IC/IB=10
0.2
IC/IB=30
0.5
0.3
IC/IB=20
0.6
+25°C
IC/IB=10
10mA
100mA
1A
10A
Collector Current
VBE(ON) vs IC
3 - 166
0.01
0.1
1
10
100
0.0
1mA
10mA
100mA
VCE (VOLTS)
Collector Current
Safe Operating Area
VBE(ON) vs IC
1A
10A
0.01
0.1
1.0
10
VCE (VOLTS)
Safe Operating Area
3 - 163
100
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
Similar pages