IRF IRF7509PBF Ultra low on-resistance Datasheet

PD - 95397
IRF7509PbF
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
Description
l
l
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS
P-CHANNEL MOSFET
N-Ch
P-Ch
30V
-30V
RDS(on) 0.11Ω 0.20Ω
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
I DM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation „
Maximum Power Dissipation „
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
N-Channel
30
2.7
2.1
21
Units
P-Channel
-30
-2.0
-1.6
-16
1.25
0.8
10
± 20
30
5.0
-55 to + 150
240 (1.6mm from case)
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient „
Max.
Units
100
°C/W
1
6/15/04
IRF7509PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Q gs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
t d(off)
Turn-Off Delay Time
tf
Fall Time
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
1.9
0.92
—
—
—
—
––
––
—
––
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
—
—
—
—
0.059 —
-0.039 —
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
—
—
—
—
—
—
—
—
— 1.0
— -1.0
—
25
— -25
— ±100
7.8 12
7.5 11
1.2 1.8
1.3 1.9
2.5 3.8
2.5 3.7
4.7 —
9.7 —
10
—
12
—
12
—
19
—
5.3 —
9.3 —
210 —
180 —
80
—
87
—
32
—
42
—
Units
V
V/°C
Ω
V
S
µA
nC
ns
pF
Conditions
V GS = 0V, I D = 250µA
V GS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
V GS = 10V, I D = 1.7A „
V GS = 4.5V, ID = 0.85A „
V GS = -10V, I D =-1.2A „
V GS = -4.5V, I D =-0.6A „
V DS = VGS, I D = 250µA
V DS = VGS, I D = -250µA
V DS = 10V, I D = 0.85A „
V DS = -10V, I D = -0.6A
„
V DS = 24 V, V GS = 0V
V DS = -24V, V GS = 0V
V DS = 24 V, VGS = 0V, TJ = 125°C
V DS = -24V, V GS = 0V, TJ = 125°C
V GS = ± 20V
N-Channel
I D = 1.7A, VDS = 24V, VGS = 10V
P-Channel
I D = -1.2A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, I D = 1.7A, RG = 6.1Ω,
RD = 8.7Ω
P-Channel
VDD = -15V, ID = -1.2A, RG = 6.2Ω,
RD = 12Ω
„
„
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
ƒ
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 1.25
—
— -1.25 A
—
—
21
—
— -16
—
— 1.2
TJ = 25°C, IS = 1.7A, V GS = 0V ƒ
V
—
— -1.2
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
—
40
60
N-Channel
ns
—
30
45
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
—
48
72
P-Channel
ƒ
nC
TJ = 25°C, I F = -1.2A, di/dt = -100A/µs
—
37
55
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
„ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 21 )
P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
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IRF7509PbF
N - Channel
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
1
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
10
3.0V
1
20µs PULSE WIDTH
TJ = 150°C
A
0.1
0.1
10
Fig 1. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
TJ = 25°C
10
TJ = 150°C
1
V DS = 10V
20µs PULSE WIDTH
0.1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
A
0.4
VGS , Gate-to-Source Voltage (V)
0.5
VGS = 10V
0.0
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
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R DS (on), Drain-to-Source On Resistance
1.0
-20
1.6
A
2.0
0.220
1.5
-40
1.2
Fig 4. Typical Source-Drain Diode
Forward Voltage
I D = 1.7A
-60
0.8
VSD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
10
Fig 2. Typical Output Characteristics
100
2.0
1
V DS, Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.180
VGS = 4.5V
0.140
0.100
0.060
VGS = 10V
0
2
4
6
8
10
I D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
3
IRF7509PbF
N - Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.120
ID , Drain Current (A)
R DS (on) , Drain-to-Source On Resistance
0.140
ID = 2.7A
0.100
0.080
0.060
0
4
8
12
10us
10
100us
1ms
1
0.1
16
1
VGS , Gate-to-Source Voltage (V)
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Crss
0
10
100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
4
V DS = 24V
V DS = 15V
12
Coss
200
1
I D = 1.7A
16
Ciss
100
100
Fig 8. Maximum Safe Operating Area
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
300
10
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
400
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
2
4
6
8
10
12
A
Q G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7509PbF
P - Channel
10
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
1
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.1
1
1
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
0.1
0.1
10
Fig 11. Typical Output Characteristics
-ISD , Reverse Drain Current (A)
-ID , Drain-to-Source Current (A)
10
TJ = 25°C
TJ = 150°C
1
VDS = -10V
20µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
A
0.4
Fig 13. Typical Transfer Characteristics
1.5
1.0
0.5
VGS = -10V
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
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0.8
1.0
1.2
A
1.4
Fig 14. Typical Source-Drain Diode
Forward Voltage
RDS(on) , Drain-to-Source On Resistance ( Ω )
I D = -1.2A
0.0
0.6
-VSD , Source-to-Drain Voltage (V)
-VGS , Gate-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
10
Fig 12. Typical Output Characteristics
10
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1.5
1.0
0.5
0.0
0
1
2
-I
3
4
, , Drain Current (A)
Fig 16. Typical On-Resistance Vs. Drain
Current
5
P - Channel
0.60
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.50
0.40
I
= -2.0A
0.30
10us
10
100us
1ms
1
0.20
0.10
3
6
/5
-V
9
12
15
0.1
A
400
1
10
Fig 18. Maximum Safe Operating Area
20
-V GS , Gate-to-Source Voltage (V)
300
Ciss
C oss
200
Crss
0
1
10
100
100
-VDS , Drain-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
100
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
C, Capacitance (pF)
100
-II D , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance ( Ω )
IRF7509PbF
I D = -1.2A
VDS = -24V
VDS = -15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
2
-VDS , Drain-to-Source Voltage (V)
4
6
8
10
12
A
Q G , Total Gate Charge (nC)
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
N-P - Channel
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
0.01
1
0.1
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7509PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
DIM
D
3
-B-
8 7 6 5
3
H
E
0.25 (.010)
-A-
M
A
M
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
SINGLE
DUAL
1 2 3 4
1 2 3 4
S S S G
S1 G1 S2 G2
1 2 3 4
INCHES
MILLIMETERS
MIN
MAX
MIN
A
.036
.044
0.91
MAX
1.11
A1
.004
.008
0.10
0.20
B
.010
.014
0.25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 BASIC
0.65 BASIC
e1
.0128 BASIC
E
.116
.120
2.95
3.05
H
.188
.198
4.78
0.33 BASIC
5.03
e
L
.016
.026
0.41
0.66
6X
θ
0°
6°
0°
6°
e1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
-CB
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
C
0.38
8X
( .015 )
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
0.65 6X
( .0256 )
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
DATE CODE (YW) - See table below
Y = YEAR
W = WEEK
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
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YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
WW = (27-52) IF PRECEDED BY A LETT ER
W
YEAR
Y
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
7
IRF7509PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
8
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