LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage V CEO –65 –45 –30 V Collector–Base Voltage V CBO –80 –50 –30 V Emitter–Base Voltage V –5.0 –5.0 –5.0 V –100 –100 –100 mAdc Collector Current — Continuous EBO IC 1 2 SOT– 323 / SC-70 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA T J , T stg 833 –55 to +150 1 BASE 2 EMITTER °C/W °C DEVICE MARKING LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F; LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857 Series LBC858 Series Collector–Base Breakdown Voltage (IC = – 10 µA) LBC856 Series Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series LBC857 Series LBC858 Series LBC857 Series LBC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO v v v v nA µA 1.FR–5=1.0 x 0.75 x 0.062in 1/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit h FE — — — 125 220 420 — — — — – 0.6 — 90 150 270 180 290 520 — — – 0.7 – 0.9 — — — — — 250 475 800 – 0.3 – 0.65 — — – 0.75 – 0.82 — fT 100 — — MHz Cob — — 4.5 pF NF –– –– 10 dB ON CHARACTERISTICS DC Current Gain (I C = –10 µA, V CE = –5.0 V) LBC856A, LBC857A, LBC858A (I C = –2.0 mA, V CE = –5.0 V) LBC856A, LBC857A, LBC858A LBC856B,LBC857B, LBC858B LBC858C, LBC856B,LBC857B, LBC858B LBC858C, Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) V CE(sat) V BE(sat) V BE(on) V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = – 10 V, f = 1.0 MHz) Noise Figure (I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz) ORDERING INFORMATION ( Pb– Free ) Device Package Shipping LBC856AWT1G_S SOT-23 3000/Tape & Reel LBC856AWT3G_S SOT-23 10000/Tape & Reel 2/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G LBC857/LBC858 –1.0 VCE= –10 V T A = 25°C 1.5 T A = 25°C –0.9 V BE(sat) @ I C /I B=10 –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 –0.7 V BE(on) @ V CE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 V CE(sat) @ I C /I B = 10 –0.1 0 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 T A = 25°C –1.6 –1.2 I C= –50 mA IC= I C= –200 mA –10 mA I C= –100 mA I C= –20 mA –0.4 –2.0 –5.0 –10 –20 –50 –100 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 –10 –100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 400 300 ib T A=25°C 5.0 C ob 3.0 2.0 1.0 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) C 7.0 –0.4 –1.0 Figure 3. Collector Saturation Region 10.0 C, CAPACITANCE(pF) –1.0 I C , COLLECTOR CURRENT (mAdc) –2.0 –0.8 –0.5 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE, COLLECTOR– EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.2 200 V CE = –10V T A = 25°C 150 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product 3/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G –1.0 T J= 25°C V CE = –5.0V –0.8 V, VOLTAGE (VOLTS) T A = 25°C 2.0 1.0 0.5 VBE(sat) @ I C/I B=10 –0.6 –0.2 0.2 VCE(sat) @ I C /I B= 10 0 –0.1–0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –0.2 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) Figure 8. “On” Voltage –1.6 –20mA IC = –50mA –100mA –200mA –10mA –0.8 –0.4 TJ= 25°C 0 –0.02 –5.0 Figure 7. DC Current Gain –2.0 –1.2 –0.5 –1.0 –2.0 I C , COLLECTOR CURRENT (mA) –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 I B , BASE CURRENT (mA) –1.0 –1.4 –1.8 T J= 25°C 20 C ib –55°C to 125°C –2.6 –3.0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient fT, CURRENT– GAIN – BANDWIDTH PRODUCT T 40 θ VB for V BE –2.2 Figure 9. Collector Saturation Region C, CAPACITANCE (pF) VBE @VCE= –5.0 V –0.4 θVB , TEMPERATURE COEFFICIENT (mV/°C) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) LBC856 500 VCE= –5.0V 200 10 100 6.0 C ob 4.0 2.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 50 20 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product 4/6 LESHAN RADIO COMPANY, LTD. r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) LBC856AWT1G, BWT1G 1.0 0.7 0.5 LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G D=0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P(pk) t1 t2 0.03 0.02 DUTY CYCLE, D = t 1 /t 2 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k t, TIME (ms) Figure 13. Thermal Response –200 1s 3 ms I C , COLLECTOR CURRENT (mA) –100 TJ= 25°C TA= 25°C –50 BC558 BC557 –10 BC556 –5.0 BONDING WIRE LIMIT THERMAL LIMIT The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT –2.0 –1.0 –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area 5/6 10k LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G SC-70 / SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM L A B C D G H J K L N S 3 B S 1 2 D G C 0.05 (0.002) J N PIN 1. BASE 2. EMITTER 3. COLLECTOR K H INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm 6/6