DinTek DTU30N02 Halogen-free according to iec 61249-2-21 Datasheet

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N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.005 at VGS = 10 V
30
0.0057 at VGS = 4.5 V
30
0.0076 at VGS = 2.5 V
30
VDS (V)
20
Qg (Typ.)
15.5 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
TO-252
• DC/DC
• Low Voltage Drive
• POL
G
G
D
S
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
20
± 12
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
30a
30a
22.6b, c
18.2b, c
70
IDM
Pulsed Drain Current
Unit
A
25a
4.1b, c
20
20
27.7
17.7
mJ
4.6b, c
3.0b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
22
3.5
Maximum
27
4.5
Unit
°C/W
1
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
19
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.5
V
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 4.0
0.6
20
µA
A
VGS = 10 V, ID = 10 A
0.0041
0.005
VGS = 4.5 V, ID = 8 A
0.0046
0.0057
VGS = 2.5 V, ID = 6 A
0.0063
0.0076
VDS = 10 V, ID = 10 A
70
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1785
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 10 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 10 V, RL = 10 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.2
0.75
1.5
11
22
11
22
55
9
18
td(on)
19
35
14
28
36
65
13
26
VDD = 10 V, RL = 10 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Fall Time
nC
3.6
30
td(off)
Turn-Off Delay Time
23.5
3
tf
tr
Rise Time
pF
32
15.5
td(on)
Turn-On Delay Time
460
210
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
25
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
70
IS = 5 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.71
1.1
V
21
40
ns
10.5
20
nC
11
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
VGS = 10 V thru 3 V
8
ID - Drain Current (A)
ID - Drain Current (A)
56
42
VGS = 2 V
28
14
6
TC = 125 °C
4
TC = 25 °C
2
TC = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
0
0.0
2.5
0.6
1.2
1.8
2.4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.008
2500
0.007
2000
3.0
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 2.5 V
0.006
0.005
VGS = 4.5 V
0.004
1500
Coss
1000
500
VGS = 10 V
Crss
0
0.003
0
28
14
42
56
0
70
4
8
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
1.7
ID = 10 A
ID = 10 A
8
VGS = 2.5 V
1.5
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
16
12
VDS = 10 V
6
VDS = 5 V
VDS = 15 V
4
2
VGS = 10 V
1.3
1.1
0.9
0
0
7
14
21
Qg - Total Gate Charge (nC)
Gate Charge
28
35
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.025
100
ID = 10 A
TJ = 150 °C
0.020
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.015
0.010
TJ = 125 °C
0.005
TJ = 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
1
3
2
VSD - Source-to-Drain Voltage (V)
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
150
0.3
ID = 250 µA
120
Power (W)
V GS(th) Variance (V)
0.1
- 0.1
ID = 5 mA
- 0.3
60
30
- 0.5
- 0.7
- 50
90
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
100
Limited by RDS(on)*
10
I D - Drain Current (A)
1
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
1 ms
10 ms
100 ms
1
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
0.1
Time (s)
100
10
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
ID - Drain Current (A)
48
36
Package Limited
24
12
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
35
2.5
28
2.0
21
1.5
Power (W)
Power (W)
Current Derating*
14
7
1.0
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
1
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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