深圳市腾恩科技有限公司 SHENZHEN TENAND TECHNOLOGY CO.,LTD http://www.tenand.com LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * AC input response * High input current ( IF : MAX. 150mA ) * High input-output isolation voltage ( Viso = 5,000Vrms ) * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio ( CTR : MIN. 20% at IF = ±100mA, VCE = 2V ) * Dual-in-line package : LTV-814H : 1-channel type LTV-824H : 2-channel type LTV-844H : 4-channel type * Wide lead spacing package : LTV-814HM : 1-channel type LTV-824HM : 2-channel type LTV-844HM : 4-channel type * Surface mounting package : LTV-814HS : 1-channel type LTV-824HS : 2-channel type LTV-844HS : 4-channel type * Tape and reel packaging : LTV-814HS-TA1, LTV-824HS-TA1 * UL approved ( No. E113898 ) only 814H * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533 ) * VDE approved ( No. 094722 ) only 814H Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 深圳市腾恩科技有限公司 SHENZHEN TENAND TECHNOLOGY CO.,LTD http://www.tenand.com Page : 1 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-814H : LTV-824H : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 2 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-844H : LTV-814HM : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 3 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-824HM : LTV-844HM : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 4 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-814HS : LTV-824HS : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 5 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-844HS : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 6 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS LTV-814HS-TA1 : LTV-824HS-TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Page : 7 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current IF ±150 mA Power Dissipation P 230 mW Collector - Emitter Voltage VCEO 35 V Emitter - Collector Voltage VECO 6 V Collector Current IC 80 mA Collector Power Dissipation PC 160 mW Ptot 320 mW Viso 5,000 Vrms Operating Temperature Topr -30 ~ +100 °C Storage Temperature Tstg -55 ~ +125 °C Tsol 260 °C INPUT OUTPUT Total Power Dissipation *1 Isolation Voltage *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 8 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Forward Voltage VF — 1.4 1.7 V IF=±100mA Terminal Capacitance Ct — 50 400 pF V=0, f=1KHz Collector Dark Current ICEO — — 100 nA VCE=20V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 35 — — V IC=0.1mA IF=0 Emitter-Collector Breakdown Voltage BVECO 6 — — V IE=10µA IF=0 IC 20 — 80 mA CTR 20 — 80 % Collector-Emitter Saturation Voltage VCE(sat) — 0.1 0.2 V IF=±100mA IC=1mA Isolation Resistance Riso — Ω DC500V 40 ~ 60% R.H. Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz Cut-Off Frequency fc 15 80 — KHz Response Time (Rise) tr — 4 18 µs Response Time (Fall) tf — 3 18 µs INPUT OUTPUT Collector Current * Current Transfer Ratio TRANSFER CHARACTERISTICS * CTR = 5×1010 1×1011 IF=±100mA VCE=2V VCE=5V, IC=2mA RL=100Ω, -3dB VCE=2V, IC=2mA RL=100Ω IC × 100% IF Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 9 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) Forward current I F(mA) 200 150 100 50 0 -30 0 25 50 75 100 125 200 160 150 100 50 0 -30 0 Ambient temperature Ta ( C) 4 40mA 30mA 20mA 2 Ta= 75 C o 50 C 200 100 50 20 10 5 2 0 20 40 60 80 100 0 0.5 Forward current IF (mA) 1.0 1.5 2.0 2.5 3.0 Forward voltage VF (V) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 80 5 VCE = 5V o Ta= 25 C 70 60 50 40 30 20 o Ta= 25 C Collector current Ic (mA) Current transfer ratio CTR (%) o 25 oC 0C o -25 C 1 0 40 I F = 150mA Pc(MAX.) 30 100mA 20 50mA 10 20mA 10 0 0.1 0 0.5 1 2 5 20 50 200 Forward current IF (mA) Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 125 o Forward current IF(mA) Collector-emitter saturation voltage VCE (sat) (V) Ic= 1mA 2mA 3mA 5mA 7mA 10mA 100 500 o 6 75 Fig.4 Forward Current vs. Forward Voltage Ta= 25 C 8 50 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 10 25 o o 0 1 2 3 4 5 6 10mA 7 8 9 10 Collector-emitter voltage VCE (V) Page : 10 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 160 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio (%) 150 I F= 10mA VCE= 5V I F= 100mA Ic= 1mA 140 120 100 100 50 0 -25 0 25 50 75 80 60 40 20 0 -25 100 0 Ambient temperature Ta ( C) 75 100 Fig.10 Response Time vs. Load Resistance -5 200 10 VCE = 10V 100 50 -6 Response time ( s) 10 -7 10 -8 10 -9 10 VCE= 2V Ic= 2mA Ta= 25 C o tr 20 10 5 tf td 2 1 ts 0.5 -10 10 0.2 0.1 0.03 -11 10 -25 0 25 50 75 100 o Ambient temperature Ta ( C) 0.1 0.2 0.5 1 5 10 Test Circuit for Response Time Vcc VCE= 5V Ic= 2mA Ta= 25 C 0 2 Load resistance R L(k ) Fig.11 Frequency Response Voltage gain Av (dB) 50 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature Collector dark current ICEO (A) 25 o o Input RD RL Input Output Output 10% o 90% -5 ts td -10 RL= 1k 1k tr 100 -15 tf Test Circuit for Frequency Response Vcc -20 RD 1 2 5 10 20 100 RL Output 500 1000 Frequency f (kHz) Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 11 of 12 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm 4 PIN 8 PIN 16 PIN Part No. : LTV-814H / 824H / 844H ( M, S, S-TA1 ) BNS-OD-C131/A4 Page : 12 of 12