FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm(typ.) ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 7.1 to 8.5GHz frequency range. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item DC Input Voltage Symbol Rating Unit VDD 12 V DC Input Voltage VGG -7 V Input Power Pin 14 dBm Storage Temperature Tstg -55 to +125 ℃ Symbol Condition Unit VDD 10 V Input Power at Tc=25℃ Pin 12 dBm DC Input Current at Tc=25℃ IDD ≤1200 mA Recommended Operating Condition Item DC Input Voltage at Tc=25℃ Operating Case Temperature Tc ℃ -40 to +85 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Test Conditions Symbol Item Min. f Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Max. P1dB VDD=10V VGG=-5V f=7.1 to 8.5GHz G1dB Unit GHz 7.1 - 8.5 ΔG Gain Flatness Limit Typ. 32.0 34.0 - dBm 23.0 26.0 - dB 4.0 dB - 2.4 - Input VSWR VSWRi - 2:1 Output VSWR VSWRo - 2:1 - 1100 1200 mA IGG - 5.0 15.0 mA ΔTch - 50 - ℃ DC Input Current VDD=10V,VGG=-5V IDD DC Input Current Channel Temperature Rise Note:G1dB is referenced to Linear Gain measured at Pin=-3dBm. Class 0 ～ 199 V Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 May 2003 - - G.C.P.:Gain Compression Point CASE STYLE: VF ESD 2.6 : 1 1 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER vs. FREQUENCY VDD=10V,VGG=-5V VDD=10V,VGG=-5V 34 7.1GHz 7.7GHz 8.5GHz 32 P1dB 30 Pin=+3dBm 26 50 22 40 28 30 24 20 20 10 Pin=-5dBm 18 7.5 8 Frequency [GHz] -10 8.5 -5 -30 10 15 VDD=10V, VGG=-5V 3 7.1GHz 7.7GHz 8.5GHz -25 5 VSWR vs. FREQUENCY VDD=10v,VGG=-5v -20 0 Input Power [dBm] IMD vs OUTPUT POWER INPUT 2.5 OUTPUT -35 2 IM3 -40 VSWR Intermodulation Distortion [dBc] 0 16 7 -45 IM5 -50 1.5 1 -55 -60 0.5 -65 -70 0 15 20 25 2-tone total Pout[dBm] 30 6.5 7 7.5 8 Frequency[GHz] 2 8.5 9 P ow e r Adde d Efficie ncy[%] Pin=+11dBm 36 Output Pow e r [dBm ] Output P ow e r [dBm ] 38 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC DRAIN CURRENT vs OUTPUT POWER AMPM vs OUTPUT POWER VDD=10V, VGG=-5V VDD=10V,VGG=-5V 20 7.1GHz 7.8GHz 8.5GHz 15 1200 ∆Phase [deg.] D ra in C u rre n t[m A ] 1300 1100 7.1GHz 7.7GHz 8.5GHz 1000 10 5 0 -5 900 -10 18 22 26 30 Output Power[dBm] 34 24 26 VGG=-5V,f=7.7GHz VGG=-5V,f=7.7GHz 38 1400 Pin=+11dBm 34 P1dB 30 Pin=+3dBm 22 Drain Current[mA] O u tp u t P o w e r [d B m ] 34 VDD=8V VDD=9V VDD=10V 1300 1200 1100 1000 Pin=-5dBm 18 900 7.5 8 8.5 9 9.5 Drain Voltage,VDD[V] 10 36 DRAIN CURRENT vs OUTPUT POWER OUTPUT POWER vs. DRAIN VOLTAGE 26 28 30 32 Output Power [dBm] 10.5 18 3 22 26 30 Output Power[dBm] 34 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER VGG=-5V,f=7.7GHz VDD=10V,f=7.7GHz 32 40 28 30 24 20 20 10 16 0 -10 -5 36 0 5 10 Output Pow er[dB m] VDD=8V VDD=9V VDD=10V 40 VGG=-5.5V VGG=-5V VGG=-4.5V 32 30 25 28 20 24 15 10 20 5 16 0 -10 15 Input Power [dBm] -5 0 5 10 Input Power[dBm] 15 OUTPUT POWER vs. GATE VOLTAGE DRAIN CURRENT vs OUTPUT POWER VDD=10V,f=7.7GHz VDD=10V,f=7.7GHz 1400 38 Pin=+11dBm 1300 34 O u tp u t P o w e r [d B m ] Drain Current[m A] 35 Pow e r Adde d Efficie ncy[%] 50 P owe r A dde dE ffic ie nc y[% ] Ou tp u t P o w e r [d Bm ] 36 1200 1100 1000 VGG=-5.5V VGG=-5V VGG=-4.5V 900 P1dB 30 Pin=+3dBm 26 22 800 Pin=-5dBm 18 18 23 28 33 -6 Output Power[dBm] -5.5 -5 Gate Voltage,VGG[V] 4 -4.5 -4 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC ■ S-PARAMETER +90 ° +50j +100j +25j 7.8 +250j +10j 7.1 10 Ω 25 Ω 7.1 -10j ± 180 ° 4 0 ∞ 8 .5GH z 30 Scale for |S 21| 7.8 -250j 8.5G H z 0.075 -25j -100j 0.1 -90° S 11 -50j S 22 S 12 S 21 VDD=10.0V, VGG=-5.0V Frequency [GHz] 6.9 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 8 8.1 8.2 8.3 8.4 8.5 8.6 S11 MAG 0.22 0.19 0.16 0.12 0.09 0.07 0.09 0.13 0.18 0.23 0.28 0.33 0.36 0.39 0.41 0.42 0.41 0.40 S21 ANG -32.75 -38.49 -42.30 -42.44 -32.59 -2.59 28.05 38.99 40.08 36.58 31.41 24.61 16.99 8.76 -0.24 -9.50 -19.29 -28.69 MAG 20.21 20.78 21.29 21.74 22.04 22.24 22.33 22.35 22.42 22.37 22.44 22.42 22.41 22.35 22.15 21.99 21.71 21.40 ANG -147.13 -171.17 164.64 140.28 115.51 90.84 66.15 41.55 17.21 -7.47 -32.13 -56.99 -82.39 -108.02 -133.79 -160.00 173.43 146.38 5 S12 MAG 0.0018 0.0017 0.0017 0.0018 0.0020 0.0022 0.0025 0.0028 0.0031 0.0033 0.0036 0.0038 0.0040 0.0042 0.0044 0.0044 0.0043 0.0041 ANG 141.10 139.86 144.62 148.20 146.45 148.64 143.94 139.92 134.35 127.55 121.48 116.50 105.95 97.60 89.83 81.16 72.49 63.50 0° Scale for |S 12| 0 S22 MAG 0.25 0.18 0.11 0.07 0.08 0.14 0.20 0.25 0.29 0.33 0.36 0.38 0.38 0.37 0.36 0.33 0.30 0.26 ANG -1.17 -7.55 -6.51 20.06 63.42 73.27 68.70 59.98 49.76 38.34 26.63 14.30 1.81 -10.89 -23.72 -35.94 -47.13 -57.41 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC ■ Recommended Bias Circuit and Internal Block Diagram 1000pF 50Ω VGG N.C. RFin RFout VDD VDD 50Ω 50Ω 1000pF 1000pF Note 1: The RC networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output. The two pins named VDD are internally connected. 6 PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD FMM5057VF 7.1-8.5GHz Power Amplifier MMIC ■ Package Out Line 3 2 4 3 5 6 1 PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD Unit : mm 7 FMM5057VF 7.1-8.5GHz Power Amplifier MMIC For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 8