Panasonic MA2SD10 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA2SD10
Silicon epitaxial planar type
0.30 ± 0.05
2
0.60
Reverse voltage (DC)
Symbol
Rating
Unit
VR
20
V
Repetitive peak reverse voltage
VRRM
20
V
Non-repetitive peak forward
surge current*
IFSM
1
A
IFM
300
mA
IF(AV)
200
mA
Peak forward current
Average forward current
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
+ 0.05
0.12 − 0.02
+ 0.05
0.60
0.01 ± 0.01
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1
0.60 − 0.03
Sealed in the super small SS-mini type 2-pin package
Allowing to rectify under (IF(AV) = 200 mA) condition
Low forward rise voltage VF
Allowing high-density mounting
0.80 − 0.03
+ 0.05
■ Features
•
•
•
•
Unit : mm
0.80 ± 0.05
0.80
For super-high speed switching circuit
+ 0.05
1.20 − 0.03
1.60 ± 0.05
1 : Anode
2 : Cathode
SS-Mini Type Package (2-pin)
Marking Symbol: 2L
Internal Connection
2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 10 V
20
µA
Forward voltage (DC)
VF1
IF = 5 mA
0.27
V
VF2
IF = 200 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
0.47
40
V
pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of
a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
1
MA2SD10
Schottky Barrier Diodes (SBD)
IF  V F
10−1
10−2
Reverse current IR (A)
Forward current IF (A)
Ta = 125°C
10−2
75°C
10−3
25°C
− 20°C
10−4
0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
2
Ta = 125°C
10−3
75°C
10−4
10−5
10−5
10−6
IR  V R
10−1
1
0.6
10−6
25°C
0
5
10
15
20
25
Reverse voltage VR (V)
30
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