DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS RDS(on) max 260mΩ @VGS = -4.5V 500mΩ @VGS = -2.5V 1000mΩ @VGS = -1.8V -20V ADVANCE INFORMATION Features • • • • • • • ID max -0.9 A Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Mechanical Data • • Applications • • Low RDS(ON) – Minimizes Conduction Losses Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) • • • Battery Disconnect Switch Load Switch for Power Management Functions • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D1 SOT363 Gate Protection Diode Top View D2 G1 S1 S2 S2 G2 D1 G2 G1 ESD PROTECTED D2 Gate Protection Diode S1 Top View Pin out Q2 P-CHANNEAL Q1 P-CHANNEAL Ordering Information (Note 4) Part Number DMP2200UDW-7 DMP2200UDW-13 Notes: Case SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information SOT363 P22 = Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMP2200UDW Document number: DS37689 Rev. 1 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D February 2015 © Diodes Incorporated DMP2200UDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +85°C ADVANCE INFORMATION Continuous Drain Current (Note 6) Value -20 ±8 -0.9 -0.7 ID Units V V A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Value 0.45 0.6 PD Steady State Steady State Units W W 275 RθJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range RθJC TJ, TSTG 208 °C/W 72 -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -1 ±10 V µA µA VGS = 0V, ID = 250µA VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.4 -1.2 V RDS (ON) 180 240 320 260 500 1,000 mΩ VSD -0.8 -1.2 V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -0.88A VGS = -2.5V, ID = -0.71A VGS = -1.8V, ID = -0.20A VGS = 0V, IS = -0.48A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) 184 26.4 18.5 221 2.1 0.4 0.5 pF pF pF Ω nC nC nC tD(OFF) tr tf 9.8 24.4 88 45 ns ns ns ns Test Condition VDS = -10V, VGS = 0V f = 1.0MHz VDS = VGS = 0V,f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -1.7A VDD = -10V, ID = -1.5A, VGS = -4.5V, RGEN = 1Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2200UDW Document number: DS37689 Rev. 1 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP2200UDW 5.0 5 T A = -55°C VDS = -5.0V T A = 25°C VGS = -8.0V VGS = -3.0V 3.0 VGS = -2.0V 2.0 VGS = -1.8V VGS = -1.5V ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 4 VGS = -4.5V 1.0 T A = 85°C T A = 150°C 3 2 1 VGS = -1.2V 0.0 0 4 1 2 3 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0.28 0.26 VGS = -2.5V 0.24 0.22 0.2 VGS = -4.5V 0.18 0.16 0 1 2 3 4 I D, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 0.3 3.5 0.5 1.5 2 2.5 3 1 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics I D = -0.88A 0.55 0.5 0.45 0.4 0.35 0.3 0.25 0.2 I D = -0.71A 0.15 5 0.1 0 1 2 3 4 5 6 7 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 8 1.5 0.32 VGS = -4.5V T A = 150°C R DS(ON), DRA IN-S OURCE O N-RESI STA NCE (NORMALIZED) 0.28 T A = 125°C 0.26 0.24 T A = 85°C 0.22 0.2 TA = 25°C 0.18 0.16 0.14 T A = -55°C 0 1 2 3 4 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP2200UDW Document number: DS37689 Rev. 1 - 2 VGS = -2.5V 1.4 0.3 0.12 0 0.6 0.34 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) ADVANCE INFORMATION 4.0 TA = 125°C 5 I D = -0.71A 1.3 VGS = -4.5V 1.2 ID = -0.88A 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP2200UDW 0.34 VGS(th), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAI N-SO URCE O N-RES ISTANCE (Ω ) 1 VGS = -2.5V 0.32 I D = -0.71A 0.3 0.28 0.26 0.24 0.22 VGS = -4.5V 0.2 ID = -0.88A 0.18 0.16 0.14 0.12 -50 0.9 0.8 ID = -1mA 0.7 I D = -250µA 0.6 0.5 0.4 0.3 -50 -25 25 50 75 100 125 0 TJ, JUNCTION TEMPERATURE ( °C) Figure 8 Gate Threshold Variation vs. Junction Temperature 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 7 On-Resistance Variation with Temperature -25 CT , JUNCTION CAPACITANCE (pF) TA = 150°C 4 I S, SOURCE CURRENT (A) 150 1000 5 3 T A = 125°C TA = 25°C 2 T A = 85°C T A = 55°C 1 C iss 100 Coss f = 1MHz 0 Crss 10 0 0.3 0.6 0.9 1.2 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 5 10 15 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 10 8 RDS(on) Limited 7 6 -ID , DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION 0.36 5 VDS = -10V 4 I D = -1.7A 3 2 PW = 100µs 1 DC PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 T J (m ax ) = 150°C PW = 1ms T A = 25°C 1 0 0 1 2 3 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMP2200UDW Document number: DS37689 Rev. 1 - 2 4 0.01 0.1 4 of 6 www.diodes.com V GS = 4.5V Single Pulse DUT on 1 * MRP Board 10 1 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMP2200UDW r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Rθ JA (t) = r(t) * RθJA D = 0.005 RθJA = 271°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm A B C H K M J D L F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X DMP2200UDW Document number: DS37689 Rev. 1 - 2 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP2200UDW IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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