HY5S6B6D(L/S)F(P)-xE 4Banks x1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Sep. 2003 Preliminary 0.2 Append Super-Low Power Group to the Data-sheet Oct. 2003 Preliminary Changed DC Characteristics Nov. 2003 Changed Package Information July 2004 0.3 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.3 / July 2004 1 HY5S6B6D(L/S)F(P)-xE 4Banks x1M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix HY5S6B6D(L/S)F(P) is a 67,108,864bit CMOS Synchronous Dynamic Random Access Memory. It is organized as 4banks of 1,048,576x16. The Low Power SDRAM provides for programmable options including CAS latency of 1, 2, or 3, READ or WRITE burst length of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave). And the Low Power SDRAM also provides for special programmable options including Partial Array Self Refresh of a quarter bank, a half bank, 1bank, 2banks, or all banks. The Hynix HY5S6B6D(L/S)F(P) has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implanted, it enables to automatically adjust refresh rate according to temperature without external EMRS command. A burst of Read or Write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule). Deep Power Down Mode is a additional operating mode for Low Power SDRAM. This mode can achieve maximum power reduction by removing power to the memory array within each SDRAM. By using this feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout flexibility. FEATURES Standard SDRAM Protocol Internal 4bank operation ● Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V ● LVCMOS compatible I/O Interface ● Low Voltage interface to reduce I/O power ● Low Power Features - PASR(Partial Array Self Refresh) - AUTO TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) - Deep Power Down Mode ● Programmable CAS latency of 1, 2 or 3 ● Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) HY5S6B6D(L/S)FP : Lead Free HY5S6B6D(L/S)F : Lead ORDERING INFORMATION Clock Frequency CAS Latency HY5S6B6D(L/S)F(P)-SE 105MHz 3 HY5S6B6D(L/S)F(P)-BE 66MHz 2 Part Number Organization Interface 4banks x 1Mb x 16 LVCMOS This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.3 / July 2004 2 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM BALL ASSIGNMENTS 8 9 3 7 2 1 A B C 54 Ball D FBGA E 0.8mm Ball Pitch F G H J <Bottom View> 1 2 3 7 8 9 VSS DQ15 VSSQ A VDDQ DQ0 VDD DQ14 DQ13 VDDQ B VSSQ DQ2 DQ1 DQ12 DQ11 VSSQ C VDDQ DQ4 DQ3 DQ10 DQ9 VDDQ D VSSQ DQ6 DQ5 DQ8 NC VSS E VDD LDQM DQ7 UDQM CLK CKE F /CAS /RAS /WE NC A11 A9 G BA0 BA1 /CS A8 A7 A6 H A0 A1 A10 VSS A5 A4 J A3 A2 VDD < Top View > Rev 0.3 / July 2004 3 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM BALL DESCRIPTION Ball Out SYMBOL TYPE F2 CLK INPUT Clock : The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK F3 CKE INPUT Clock Enable : Controls internal clock signal and when deactivated, the SDRAM will be one of the states among (deep) power down, suspend or self refresh G9 CS INPUT Chip Select : Enables or disables all inputs except CLK, CKE, UDQM and LDQM G7,G8 BA0, BA1 INPUT Bank Address : Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity H7, H8, J8, J7, J3, J2, H3, H2, H1, G3, H9, G2 A0 ~ A11 INPUT Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7 Auto-precharge flag : A10 F8, F7, F9 RAS, CAS, WE INPUT Command Inputs : RAS, CAS and WE define the operation Refer function truth table for details F1, E8 UDQM, LDQM INPUT Data Mask : Controls output buffers in read mode and masks input data in write mode A8, B9, B8, C9, C8, D9, D8, E9, E1, D2, D1, C2, C1, B2, B1, A2 DQ0 ~ DQ15 I/O A9, E7, J9, A1, E3, J1 VDD/VSS SUPPLY Power supply for internal circuits A7, B3, C7, D3, A3, B7, C3, D7 VDDQ/VSSQ SUPPLY Power supply for output buffers NC - E2, G1 Rev 0.3 / July 2004 DESCRIPTION Data Input/Output : Multiplexed data input/output pin No connection 4 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM FUNCTIONAL BLOCK DIAGRAM 1Mbit x 4banks x 16 I/O Low Power Synchronous DRAM PASR Extended Mode Register Self refresh logic & timer Internal Row Counter 1Mx16 Bank 3 CLK WE Refresh Column Active 1Mx16 Bank 0 Memory Cell Array Column Pre Decoder U/LDQM DQ0 I/O Buffer & Logic CAS 1Mx16 Bank 1 Sense AMP & I/O Gate RAS State Machine CS Row decoders Row decoders Row decoders Row decoders CKE 1Mx16 Bank 2 Row Pre Decoder Row Active DQ15 Column decoders Column Add Counter Bank Select A0 Burst Counter Burst Length A11 BA1 Address Buffers A1 Address Register Mode Register CAS Latency Data Out Control BA0 Rev 0.3 / July 2004 5 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 A9 A8 A7 0 0 0 0 OP Code 0 0 A6 A5 A4 CAS Latency A3 A2 BT A1 A0 Burst Length OP Code A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write CAS Latency Burst Type A3 Burst Type 0 Sequential 1 Interleave Burst Length A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 0 1 0 1 1 0 1 0 Burst Length A2 A1 A0 1 0 0 0 2 0 0 1 3 0 1 0 4 4 0 Reserved 0 1 1 8 8 1 Reserved 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved 1 1 1 Reserved Rev 0.3 / July 2004 A3 = 0 A3=1 0 1 1 1 2 2 1 1 0 Reserved Reserved 1 1 1 Full Page Reserved 6 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM BASIC FUNCTIONAL DESCRIPTION (Continued) Extended Mode Register BA1 BA0 A11 A10 A9 A8 A7 1 0 0 0 0 0 0 A6 A5 DS A4 A3 0 0 A2 A1 A0 PASR DS (Driver Strength) A6 A5 Driver Strength 0 0 Full 0 1 1/2 Strength 1 0 1/4 Strength 1 1 Reserved PASR (Partial Array Self Refresh) Rev 0.3 / July 2004 A2 A1 A0 0 0 0 Self Refresh Coverage All Banks 0 0 1 Half of Total Bank (BA1=0 or Bank 0,1) 0 1 0 Quarter of Total Bank (BA1=BA0=0 or Bank 0) 0 1 1 Reserved 1 0 0 Reserved 1 0 1 Half of Bank 0(Bank 0 and Row Address MSB=0) 1 1 0 Quarter of Bank 0(Bank 0 and Row Address 2 MSBs=0) 1 1 1 Reserved 7 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM Power Up and Initialization Like a Synchronous DRAM, Low Power(LP) SDRAM must be powered up and initialized in a predefined manner. Power must be applied to VDD and VDDQ(simultaneously). The clock signal must be started at the same time. After power up, an initial pause of 200 usec is required. And a precharge all command will be issued to the LP SDRAM. Then, 8 or more Auto refresh cycles will be provided. After the Auto refresh cycles are completed, a mode register set(MRS) command will be issued to program the specific mode of operation (Cas Latency, Burst length, etc.) And a extended mode register set command will be issued to program specific mode of self refresh operation(PASR). The following these cycles, the LP SDRAM is ready for normal opeartion. Programming the registers Mode Register The mode register contains the specific mode of operation of the LP SDRAM. This register includes the selection of a burst length(1, 2, 4, 8, Full Page), a cas latency(1, 2 or 3), a burst type. The mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of mode register set command. Extended Mode Register The extended mode register contains the specific features of self refresh opeartion of the LP SDRAM. This register includes the selection of partial arrays to be refreshed(half array, quarter array, etc.). The extended mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of extended mode register set command. Bank(Row) Active The Bank Active command is used to activate a row in a specified bank of the device. This command is initiated by activating CS, RAS and deasserting CAS, WE at the positive edge of the clock. The value on the BA1 and BA0 selects the bank, and the value on the A0-A11 selects the row. This row remains active for column access until a precharge command is issued to that bank. Read and write opeartions can only be initiated on this activated bank after the minimum tRCD time is passed from the activate command. Read The READ command is used to initiate the burst read of data. This command is initiated by activating CS, CAS, and deasserting WE, RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A7-A0 address inputs select the sarting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the READ burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. The length of burst and the CAS latency will be determined by the values programmed during the MRS command. Write The WRITE command is used to initiate the burst write of data. This command is initiated by activating CS, CAS, WE and deasserting RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A7-A0 address inputs select the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the WRITE burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. Rev 0.3 / July 2004 8 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM Precharge The Precharge command is used to close the open row in a particular bank or the open row in all banks. When the precharge command is issued with address A10, high, then all banks will be precharged, and If A10 is low, the open row in a particular bank will be precharged. The bank(s) will be available when the minimum tRP time is met after the precharge command is issued. Auto Precharge The Auto Precharge command is issued to close the open row in a particular bank after READ or WRITE operation. If A10 is high when a READ or WRITE command is issued, the READ or WRITE with Auto Precharge is initiated. Burst Termination The Burst Termination is used to terminate the burst operation. This function can be accomplished by asserting a Burst Stop command or a Precharge command during a burst READ or WRITE operation. The Precharge command interrupts a burst cycle and close the active bank, and the Burst Stop command terminates the existing burst operation leave the bank open. Data Mask The Data Mask comamnd is used to mask READ or WRITE data. During a READ operation, When this command is issued, data ouputs are disabled and become high impedance after two clock delay. During a WRITE operation, When this command is issued, data inputs can't be written with no clock delay. Clock Suspend The Clock Suspend command is used to suspend the internal clock of LP SDRAM. During normal access mode, CKE is keeping High. When CKE is low, it freezes the internal clock and extends data Read and Write operations. Power Down The Power Down command is used to reduce standby current. Before this command is issued, all banks must be precharged and tRP must be passed after a precharge command. Once the Power Down command is initiated by keeping CKE low, all of the input buffer except CKE are gated off. Auto Refresh The Auto Refresh command is used during normal operation and is similar to CBR refresh in Coventional DRAMs. This command must be issued each time a refresh is required. When an Auto Refresh command is issued , the address bits is ''Don't care'', because the specific address bits is generated by internal refresh address counter. Self Refresh The Self Refresh command is used to retain cell data in the LP SDRAM. In the Self Refresh mode, the LP SDRAM operates refresh cycle asynchronously. The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). The LP SDRAM can accomplish an special Self Refresh operation by the specific modes(PASR) programmed in extended mode registers. The LP SDRAM can control the refresh rate automatically by the temperature value of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current and select the memory array to be refreshed by the value of PASR(Partial Array Self Refresh). The LP SDRAM can reduce the self refresh current(IDD6) by using these two modes. Deep Power Down The Deep Power Down Mode is used to achieve maximum power reduction by cutting the power of the whole memory array of the devices. For more information, see the special operation for Low Power consumption of this data sheet. Rev 0.3 / July 2004 9 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM COMMAND TRUTH TABLE Function ADDR A10/ AP BA 0,1 CKEn-1 CKEn CS RAS CAS WE Mode Register Set H X L L L L OP CODE 2 Extended Mode Register Set H X L L L L OP CODE 2 No Operation H X L H H H X Device Deselect H X H X X X Bank Active H X L L H H Read H X L H L H Column L V Read with Autoprecharge H X L H L H Column H V Write H X L H L L Column L V Write with Autoprecharge H X L H L L Column H V Precharge All Banks H X L L H L X H X Precharge selected Bank H X L L H L X L V Burst stop H X L H H L X Auto Refresh H H L L L H X Self Refresh Entry H L L L L H X Self Refresh Exit L H H X X X L H H H Precharge Power Down Entry H L H X X X L H H H Precharge Power Down Exit L H H X X X L H H H Clock Suspend Entry H L H X X X L V V V Clock Suspend Exit L H Deep Power Down Entry H L Deep Power Down Exit L H X Row Address X L H Note X V 1 X X X X H L X X X Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high. 2. BA1/BA0 must be issued 0/0 in the mode register set, and 1/0 in the extended mode register set. Rev 0.3 / July 2004 10 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM DQM TRUTH TABLE Function CKEn-1 CKEn LDQM UDQM Data Write/Output enable H X L L Data Mask/Output disable H X H H Lower byte write/Output enable, Upper byte mask/Output disable H X L H Lower byte Mask/Output disable, Upper byte write/Output enable H X H L Note : 1. H: High Level, L: Low Level, X: Don't Care 2. Write DQM Latency is 0 CLK and Read DQM Latency is 2 CLK Rev 0.3 / July 2004 11 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CURRENT STATE TRUTH TABLE (Sheet 1 of 4) Current State idle Row Active Read Command CS RAS CAS WE BA0/ BA1 L L L L L L L H X L L H L L L H L H L A11-A0 Notes Mode Register Set Set the Mode Register 14 X Auto or Self Refresh Start Auto or Self Refresh 5 BA X Precharge No Operation H BA Row Add. Bank Activate Activate the specified bank and row L L BA Col Add. A10 Write/WriteAP ILLEGAL 4 H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4 L H H H X X No Operation No Operation 3 H X X X X X Device Deselect No Operation or Power Down 3 L L L L Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Precharge 7 L L H H BA Row Add. Bank Activate ILLEGAL 4 L H L L BA Col Add. A10 Write/WriteAP Start Write : optional AP(A10=H) 6 L H L H BA Col Add. A10 Read/ReadAP Start Read : optional AP(A10=H) 6 L H H H X X No Operation No Operation H X X X X X Device Deselect No Operation L L L L Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Termination Burst: Start the Precharge L L H H BA Row Add. Bank Activate ILLEGAL L H L L BA Col Add. A10 Write/WriteAP Termination Burst: Start Write(optional AP) 8,9 L H L H BA Col Add. A10 Read/ReadAP Termination Burst: Start Read(optional AP) 8 L H H H X X No Operation Continue the Burst Rev 0.3 / July 2004 OP CODE Action Description OP CODE OP CODE 4 12 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CURRENT STATE TRUTH TABLE (Sheet 2 of 4) Current State Read Write Read with Auto Precharge Write with Auto Precharge Command CS RAS CAS WE BA0/ BA1 A11-A0 X X Action Description H X X X L L L L L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge Termination Burst: Start the Precharge 10 L L H H BA Row Add. Bank Activate ILLEGAL 4 L H L L BA Col Add. A10 Write/WriteAP Termination Burst: Start Write(optional AP) 8 L H L H BA Col Add. A10 Read/ReadAP Termination Burst: Start Read(optional AP) 8,9 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst L L L L Mode Register Set ILLEGAL L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst L L L L Mode Register Set ILLEGAL L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst Rev 0.3 / July 2004 OP CODE OP CODE OP CODE Device Deselect Continue the Burst Mode Register Set ILLEGAL Notes 13,14 13 13,14 13 13,14 13 13 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CURRENT STATE TRUTH TABLE (Sheet 3 of 4) Current State Precharging Row Activating Write Recovering Command CS RAS CAS WE BA0/ BA1 A11-A0 L L L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge No Operation: Bank(s) idle after tRP L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12 L H H H X X No Operation No Operation: Bank(s) idle after tRP H X X X X X Device Deselect No Operation: Bank(s) idle after tRP L L L L Mode Register Set ILLEGAL L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,11,1 2 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12 L H H H X X No Operation No Operation: Row Active after tRCD H X X X X X Device Deselect No Operation: Row Active after tRCD L L L L Mode Register Set ILLEGAL L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge ILLEGAL 4,13 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP Start Write: Optional AP(A10=H) L H L H BA Col Add. A10 Read/ReadAP Start Read: Optional AP(A10=H) L H H H X X No Operation No Operation: Row Active after tDPL OP CODE ILLEGAL Notes L OP CODE Mode Register Set Action L Rev 0.3 / July 2004 OP CODE Description 13,14 13 13,14 13 13,14 13 9 14 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CURRENT STATE TRUTH TABLE (Sheet 4 of 4) Current State Write Recovering Write Recovering with Auto Precharge Refreshing Mode Register Accessing Command CS RAS CAS WE BA0/ BA1 A11-A0 X X Action Description Device Deselect No Operation: Row Active after tDPL Mode Register Set ILLEGAL Notes H X X X L L L L L L L H X X Auto or Self Refresh ILLEGAL L L H L BA X Precharge ILLEGAL 4,13 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,9,12 L H H H X X No Operation No Operation: Precharge after tDPL H X X X X X Device Deselect No Operation: Precharge after tDPL L L L L Mode Register Set ILLEGAL L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 13 L L H H BA Row Add. Bank Activate ILLEGAL 13 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13 L H H H X X No Operation No Operation: idle after tRC H X X X X X Device Deselect No Operation: idle after tRC L L L L Mode Register Set ILLEGAL L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 13 L L H H BA Row Add. Bank Activate ILLEGAL 13 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13 L H H H X X No Operation No Operation: idle after 2 clock cycles H X X X X X Device Deselect No Operation: idle after 2 clock cycles Rev 0.3 / July 2004 OP CODE OP CODE OP CODE 13,14 13 13,14 13,14 15 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM Note : 1. H: Logic High, L: Logic Low, X: Don't care, BA: Bank Address, AP: Auto Precharge. 2. All entries assume that CKE was active during the preceding clock cycle. 3. If both banks are idle and CKE is inactive, then in power down cycle 4. Illegal to bank in specified states. Function may be legal in the bank indicated by Bank Address, depending on the state of that bank. 5. If both banks are idle and CKE is inactive, then Self Refresh mode. 6. Illegal if tRCD is not satisfied. 7. Illegal if tRAS is not satisfied. 8. Must satisfy burst interrupt condition. 9. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 10. Must mask preceding data which don't satisfy tDPL. 11. Illegal if tRRD is not satisfied 12. Illegal for single bank, but legal for other banks in multi-bank devices. 13. Illegal for all banks. 14. Mode Register Set and Extended Mode Register Set is same command truth table except BA1. Rev 0.3 / July 2004 16 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CKE Enable(CKE) Truth TABLE (Sheet 1 of 2) Current State Self Refresh CKE Command Previous Current Cycle Cycle CS RAS CAS WE BA0, BA1 A11A0 Notes H X X X X X X X INVALID 1 L H H X X X X X Exit Self Refresh with Device Deselect 2 L H L H H H X X Exit Self Refresh with No Operation 2 L H L H H L X X ILLEGAL 2 L H L H L X X X ILLEGAL 2 L H L L X X X X ILLEGAL 2 L L X X X X X X Maintain Self Refresh H X X X X X X X INVALID 1 L H H X X X X X L H H H X X Power Down mode exit, all banks idle 2 L X X X X X L X X X ILLEGAL 2 X X L X X Power Down L Deep Power Down Action H L L L X X X X X X Maintain Power Down Mode H X X X X X X X INVALID 1 L H X X X X X X Deep Power Down mode exit 5 L L X X X X X X Maintain Deep Power Down Mode Rev 0.3 / July 2004 17 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CKE Enable(CKE) Truth TABLE (Sheet 2 of 2) Current State All Banks Idle Any State other than listed above CKE Command Previous Current Cycle Cycle CS RAS CAS WE BA0, BA1 A11A0 Action H H H X X X H H L H X X H H L L H X H H L L L H X H H L L L L OP CODE H L H X X X H L L H X X H L L L H X H L L L L H X X Entry Self Refresh H L L L L L OP CODE Mode Register Set L X X X X X X X Power Down H H X X X X X X Refer to operations of the Current State Truth Table H L X X X X X X Begin Clock Suspend next cycle L H X X X X X X Exit Clock Suspend next cycle L L X X X X X X Maintain Clock Suspend Refer to the idle State section of the Current State Truth Table X Notes 3 3 3 Auto Refresh Mode Register Set Refer to the idle State section of the Current State Truth Table 4 3 3 3 4 4 Note : 1. For the given current state CKE must be low in the previous cycle. 2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high. 3. The address inputs depend on the command that is issued. 4. The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered from the all banks idle state. 5. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high and is maintained for a minimum 200usec. Rev 0.3 / July 2004 18 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM ABSOLUTE MAXIMUM RATING Symbol Rating Unit Ambient Temperature Parameter TA -25 ~ 85 oC Storage Temperature TSTG -55 ~ 125 oC VIN, VOUT VDD VDDQ IOS PD -1.0 ~ 2.6 -1.0 ~ 2.6 -1.0 ~ 2.6 50 1 V V V mA W TSOLDER 260 . 10 Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Voltage on VDDQ relative to VSS Short Circuit Output Current Power Dissipation Soldering Temperature . Time oC . Sec DC OPERATING CONDITION (TA= -25 to 85 oC ) Parameter Power Supply Voltage Power Supply Voltage Input High Voltage Input Low Voltage Symbol VDD VDDQ VIH VIL Min 1.65 1.65 0.8*VDDQ -0.3 Typ 1.8 1.8 - Max 1.95 1.95 VDDQ+0.3 0.3 Unit V V V V Note 1 1, 2 1, 2 1, 2 Note : 1. All Voltages are referenced to VSS = 0V 2. VDDQ must not exceed the level of VDD AC OPERATING TEST CONDITION (TA= -25 to 85 oC, VDD = 1.8V, VSS = 0V) Parameter AC Input High/Low Level Voltage Input Timing Measurement Reference Level Voltage Input Rise/Fall Time Output Timing Measurement Reference Level Voltage Output Load Capacitance for Access Time Measurement Symbol VIH / VIL Vtrip tR / tF Voutref CL Value 0.9*VDDQ/0.2 0.5*VDDQ 1 0.5*VDDQ Unit V V ns V pF Note 1 Note 1. Vtt=0.5xVDDQ 50Ω Output ZO=50Ω 30pF Rev 0.3 / July 2004 19 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM CAPACITANCE (TA= 25 oC, f=1MHz) Parameter Input capacitance Pin Symbol CLK -H -/P/S/B Unit Min Max Min Max CI1 2 4.0 2 4.0 pF A0~A11, BA0, BA1, CKE, CS, RAS, CAS, WE, UDQM, LDQM CI2 2 4.0 2 4.0 pF DQ0 ~ DQ15 CI/O 3.5 6.0 3.5 6.0 pF Data input/output capacitance DC CHARACTERRISTICS I (TA= 25 to 85oC) Parameter Symbol Min Max Unit Note Input Leakage Current ILI -1 1 uA 1 Output Leakage Current ILO -1.5 1.5 uA 2 Output High Voltage VOH VDDQ-0.2 - V 3 Output Low Voltage VOL - 0.2 V 4 Note : 1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V. 2. DOUT is disabled. VOUT= 0 to 1.95V. 3. IOUT = - 0.1mA 4. IOUT = + 0.1mA Rev 0.3 / July 2004 20 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM DC CHARACTERISTICS II (TA= 25 to 85oC) Parameter Symbol Test Condition Speed -S -B 50 35 Unit Note Operating Current IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK = 15ns 0.5 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 0.3 mA IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 5.5 Precharge Standby Current in Non Power Down Mode mA mA IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. IDD3P CKE ≤ VIL(max), tCK = 15ns IDD3PS CKE ≤ VIL(max), tCK = ∞ 1 IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 12 IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 6 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 60 40 mA Auto Refresh Current IDD5 tRC ≥ tARFC(min), All banks active 80 60 mA Self Refresh Current IDD6 CKE ≤ 0.2V Standby Current in Deep Power Down Mode IDD7 See p.25~26 Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode 1 2 1.5 mA mA See Next Page mA 50 1 2 uA Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. See the tables of next page for more specific IDD6 current values. - Low Power : HY5S6B6DLF Series - Super Low Power : HY5S6B6DSF Series Rev 0.3 / July 2004 21 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM DC CHARACTERISTICS III - Low Power (IDD6) Memory Array Temp. ( oC) 4 Banks 2 Banks 1 Bank 85 190 130 100 µA 45 120 90 80 µA * HY5S6B6DLF Series Unit 1) DC CHARACTERISTICS III - Super Low Power (IDD6) Memory Array Temp. ( oC) 4 Banks 2 Banks 1 Bank 85 150 110 90 µA 45 100 85 75 µA * HY5S6B6DSF Series Unit 2) HY5S6B6DLF Serise HY5S6B6DSF Serise 200 200 180 160 140 IDD6 [uA] IDD6 [uA] 160 120 140 120 100 100 80 80 60 60 -20 0 20 40 60 80 Temp. [℃] Note 1) IDD6 vs Temp. Graph for HY5S6B6DLF Rev 0.3 / July 2004 4 Bank 2 Bank 1 Bank 180 4 Bank 2 Bank 1 Bank -20 0 20 40 60 80 Temp. [℃] Note 2) IDD6 vs Temp. Graph for HY5S6B6DSF 22 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) Parameter Symbol S B Min Max Min Max 1000 15 1000 Unit Note CAS Latency=3 tCK3 9.5 CAS Latency=2 tCK2 15 Clock High Pulse Width tCHW 3.5 - 3.5 - ns 1 Clock Low Pulse Width tCLW 3.5 - 3.5 - ns 1 CAS Latency=3 tAC3 - 7 - 9 ns CAS Latency=2 tAC2 - 8 - 9 ns Data-out Hold Time tOH 2.5 - 2.5 - ns Data-Input Setup Time tDS 3 - 4 - ns 1 Data-Input Hold Time tDH 1.5 - 2 - ns 1 Address Setup Time tAS 3 - 4 - ns 1 Address Hold Time tAH 1.5 - 2 - ns 1 CKE Setup Time tCKS 3 - 4 - ns 1 CKE Hold Time tCKH 1.5 - 2.0 - ns 1 Command Setup Time tCS 3 - 4 - ns 1 Command Hold Time tCH 1.5 - 2 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1 - 1 - ns System Clock Cycle Time Access Time From Clock CLK to Data Output in High-Z Time 15 ns ns CAS Latency=3 tOHZ3 7 9 ns CAS Latency=2 tOHZ2 8 9 ns 2 Note : 1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter. 2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If tR > 1ns, then (tR/2-0.5)ns should be added to the parameter. Rev 0.3 / July 2004 23 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Parameter Symbol S B Unit Min Max Min Max 90 - 90 - ns RAS Cycle Time tRC RAS to CAS Delay tRCD 28.5 - 30 - ns RAS Active Time tRAS 60 100K 60 100K ns RAS Precharge Time tRP 28.5 - 30 - ns RAS to RAS Bank Active Delay tRRD 19 - 30 - ns CAS to CAS Delay tCCD 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - CLK Data-in to Precharge Command tDPL 2 - 2 - CLK Data-In to Active Command tDAL DQM to Data-Out Hi-Z tDQZ 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - CLK CAS Latency=3 tPROZ3 3 - 3 - CLK CAS Latency=2 tPROZ2 2 Power Down Exit Time tDPE 1 Auto Refresh Cycle Time tARFC Self Refresh Exit Time tSRE 1 - 1 - CLK Refresh Time tREF - 64 - 64 ms Precharge to Data Output High-Z Note tDPL+tRP 2 - CLK 1 90 105 CLK ns 1 Note : 1. A new command can be given tRC after self refresh exit. Rev 0.3 / July 2004 24 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM Special Operation for Low Power Consumption Deep Power Down Mode Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole memory array of the devices. Data will not be retained once the device enters Deep Power Down Mode. Full initialization is required when the device exits from Deep Power Down Mode. Truth Table Current State Command CKEn-1 CKEn CS RAS CAS WE Idle Deep Power Down Entry H L L H H L Deep Power Down Deep Power Down Exit L H X X X X Deep Power Down Mode Entry The Deep Power Down Mode is entered by having CS and WE held low with RAS and CAS high at the rising edge of the clock, while CKE is low. The following diagram illustrates deep power down mode entry. CLK CKE CS RAS CAS WE tRP Precharge if needed Rev 0.3 / July 2004 Deep Power Down Entry 25 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM Deep Power Down Mode (Continued) Deep Power Down Mode Exit Sequence The Deep Power Down mode is exited by asserting CKE high. After the exit, the following sequence is needed to enter a new command. 1. Maintain NOP input conditions for a minimum of 200usec 2. Issue precharge commands for all banks of the device 3. Issue 8 or more auto refresh commands 4. Issue a mode register set command to initialize the mode register 5. Issue an extended mode register set command to initialize the extended mode register The following timing diagram illustrates deep power down mode exit sequence. CLK CKE CS RAS CAS WE 200µs Deep Power Down exit Rev 0.3 / July 2004 tRC tRP All Banks Precharge Auto refresh Auto refresh Mode Register Set Extended Mode Register Set New Command Accepted Here 26 HY5S6B6D(L/S)F(P)-xE 4Banks x 1M x 16bits Synchronous DRAM PACKAGE INFORMATION 54 Ball 0.8mm pitch 8mm FBGA Unit [mm] 8.0 6.40BSC 0.80(Typ) 0.8 A1 INDEX MARK 0.80(Typ) 0.450± 0.05 View 3.20± 0.05 4.00± 0.05 8.00 6.40 Bottom 0.340±0.05 1.20max Rev 0.3 / July 2004 27