APM4532K Dual Enhancement Mode MOSFET (N-and P-Channel) Pin Description Features • N-Channel D1 D1 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =60mΩ(typ.) @ VGS = 4.5V • S1 G1 S2 G2 P-Channel -30V/-3.5A, RDS(ON) =85mΩ(typ.) @ VGS =-10V RDS(ON) =135mΩ(typ.) @ VGS =-4.5V • • • Top View of SOP − 8 (8) D1 (7) D1 (3) S2 Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (4) G2 (2) G1 Applications • D2 D2 Power Management in Notebook Computer, S1 (1) Portable Equipment and Battery Powered D2 (5) D2 (6) N-Channel MOSFET P-Channel MOSFET Systems Ordering and Marking Information Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4532 Lead Free Code Handling Code Temp. Range Package Code APM4532 K : APM4532 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM4532K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N Channel P Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±20 ±20 5 -3.5 20 -14 1.7 -1.7 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Power Dissipation RθJA* VGS=±10V Unit V A A 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4532K Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250µA N-Ch 30 VGS=0V, IDS=-250µA P-Ch -30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current IDSS TJ=85°C VDS=-24V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS RDS(ON) Gate Leakage Current a Drain-Source On-State Resistance Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 V 1 N-Ch 30 -1 P-Ch -30 VDS=VGS, IDS=250µA N-Ch 1 1.5 2 VDS=VGS, IDS=-250µA P-Ch -1 -1.5 -2 VGS=±20V, VDS=0V N-Ch ±100 P-Ch ±100 VGS=10V, IDS=5A N-Ch 35 45 VGS=-10V, IDS=-3.5A P-Ch 85 95 VGS=4.5V, IDS=4A N-Ch 60 70 VGS=-4.5V, IDS=-2.5A P-Ch 135 150 2 µA V nA mΩ www.anpec.com.tw APM4532K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4532K Test Condition Min. Typ. Max. Unit Diode Characteristics VSD a Diode Forward Voltage Dynamic Characteristics Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time Tf N-Ch 0.7 1.3 ISD=-1.7A, VGS=0V P-Ch -0.7 -1.3 N-Ch 3 P-Ch 13 N-Channel VGS=0V, VDS=25V, Frequency=1.0MHz N-Ch 440 P-Ch 530 N-Ch 90 P-Channel VGS=0V, VDS=-25V, P-Ch 90 N-Ch 40 P-Ch 40 N-Ch 10 15 P-Ch 8 15 N-Ch 8 20 P-Ch 7 20 N-Ch 20 28 P-Ch 15 28 N-Ch 5 15 P-Ch 7 18 N-Channel VDS=15V, VGS=10V, IDS=5A N-Ch 12.6 17 P-Ch 8 12 N-Ch 4.7 P-Channel VDS=-15V, VGS=-10V, IDS=-3.5A P-Ch 2 N-Ch 1.1 P-Ch 1 V b RG td(OFF) ISD=1.7A, VGS=0V VGS=0V,VDS=0V,F=1MHz N-Channel VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Delay Time P-Channel VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Ω pF ns b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge nC Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM4532K Typical Characteristics N-Channel Drain Current Power Dissipation 2.5 6 5 ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 0.5 4 3 2 1 o TA=25 C 0.0 0 20 o 40 60 0 80 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im on )L 300µs s( 10 Rd ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 100 1ms 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 TA=25 C,VG=10V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 20 100 VGS=5,6,7,8,9,10V 90 RDS(ON) - On - Resistance (mΩ) 18 ID - Drain Current (A) 16 14 12 4V 10 8 6 4 3V 2 0 80 VGS=4.5V 70 60 50 40 VGS=10V 30 20 10 0 1 2 3 4 0 5 0 4 8 12 16 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 20 20 IDS=250µΑ Normalized Threshold Voltage 18 ID - Drain Current (A) 16 14 12 10 8 o Tj=125 C 6 o Tj=-55 C o 4 Tj=25 C 1.4 1.2 1.0 0.8 0.6 0.4 2 0 0 1 2 3 4 5 0.2 -50 -25 6 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.0 20 VGS = 10V 10 IDS = 5A 1.6 o IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 35mΩ 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.6 10 Frequency=1MHz VDS=10V 9 IDS= 5A VGS - Gate - source Voltage (V) 600 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 700 500 Ciss 400 300 200 Coss 100 0 0.2 Crss 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 3 6 9 12 15 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 6 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) P-Channel Power Dissipation Drain Current 4 2.5 3 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 2 1 0.5 o TA=25 C,VG=-10V o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it 10 on )L im 300µs s( 1ms Rd -ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 100 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 7 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 14 240 VGS= -5,-6,-7,-8,-9,-10V 220 RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) 12 10 8 -4V 6 4 2 -3V 200 VGS= -4.5V 180 160 140 120 VGS= -10V 100 80 60 40 20 0 0 1 2 3 4 0 5 4 6 8 10 12 -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.8 14 IDS= -250µΑ 1.6 Normalized Threshold Voltage 12 o -ID - Drain Current (A) 2 -VDS - Drain - Source Voltage (V) 14 Tj=-55 C 10 o Tj=125 C o Tj=25 C 8 6 4 2 0 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 0.0 -50 -25 7 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 8 www.anpec.com.tw APM4532K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 1.8 20 VGS = -10V o 1.4 -IS - Source Current (A) Normalized On Resistance 10 IDS = -3.5A 1.6 1.2 1.0 0.8 0.6 Tj=150 C o Tj=25 C 1 0.1 o 0.4 -50 -25 R ON@Tj=25 C: 85mΩ 0 25 50 75 0.04 0.0 100 125 150 0.8 1.2 1.6 2.0 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 800 VDS= -10V Frequency=1MHz 9 -VGS - Gate - source Voltage (V) 700 600 C - Capacitance (pF) 0.4 Ciss 500 400 300 200 Coss 100 IDS= -3.5A 8 7 6 5 4 3 2 1 Crss 0 0 5 10 15 20 25 0 30 1 2 3 4 5 6 7 8 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 9 www.anpec.com.tw APM4532K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM4532K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw APM4532K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 12 Ko www.anpec.com.tw APM4532K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 Carrier Width 12 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 P 8± 0.1 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 13 www.anpec.com.tw