BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 1 ■ Audio amplifiers ■ Linear and switching industrial equipment 2 TO-220 Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Table 1. Figure 1. Internal schematic diagram R1 typ.= 10 kΩ R2 typ.= 150 Ω Package Packaging TO-220 Tube Device summary Order code Marking BDX53B BDX53B BDX53C BDX53C BDX54B BDX54B BDX54C BDX54C October 2007 Rev 4 1/7 www.st.com 7 Electrical ratings 1 BDX53B - BDX53C - BDX54B - BDX54C Electrical ratings Table 2. Absolute maximum ratings Value Symbol BDX53B BDX53C PNP BDX54B BDX54C Unit Collector-base voltage (IE = 0) 80 100 V VCEO Collector-emitter voltage (IB = 0) 80 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 8 A Collector peak current (repetitive) 12 A Base current 0.2 mA PTOT Total dissipation at Tc = 25°C 60 W Tstg Storage temperature -65 to 150 °C 150 °C ICM IB TJ 2/7 NPN VCBO IC Note: Parameter Max. operating junction temperature For PNP types voltage and current values are negative. BDX53B - BDX53C - BDX54B - BDX54C 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter VCEO(sus)(1) Collector-emitter sustaining voltage (IB = 0) Test conditions IC = 100 mA for BDX53B - BDX54B for BDX53C - BDX54C Min. Typ. 80 100 ICBO for BDX53B - BDX54B VCB = 100 V for BDX53C - BDX54C VCE = 40 V ICEO Collector cut-off current (IB = 0) for BDX53B - BDX54B VCE = 50 V for BDX53C - BDX54C IEBO Emitter cut-off current (IC = 0) Unit V V VCB = 80 V Collector cut-off current (IE = 0) Max. VEB = 5 V 0.2 mA 0.2 mA 0.5 mA 0.5 mA 2 mA VCE(sat)(1) Collector-emitter saturation IC = 3 A; voltage IB = 12 mA 2 V VBE(sat)(1) Base-emitter saturation voltage IC = 3 A; IB = 12 mA 2.5 V hFE(1) DC current gain IC = 3 A; VCE = 3 V VF(1) Diode forward voltage 2.5 V V IF = 3 A; IF = 8 A; 750 1.8 2.5 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Note: For PNP types voltage and current values are negative. 3/7 Package mechanical data 3 BDX53B - BDX53C - BDX54B - BDX54C Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 4/7 BDX53B - BDX53C - BDX54B - BDX54C Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 5/7 Revision history 4 BDX53B - BDX53C - BDX54B - BDX54C Revision history Table 4. 6/7 Document revision history Date Revision 09-Sep-2004 3 23-Oct-2007 4 Changes Technology change from epibase to planar (PCN APMPWR/07/2417 and APM-PWR/07/2615) BDX53B - BDX53C - BDX54B - BDX54C Revision history Please Read Carefully: Information in this document is provided solely in connection with ST products. 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