Diodes DMN100 N-channel enhancement mode field effect transistor Datasheet

DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
Extremely Low On-Resistance:
170mW @ VGS = 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone,
PCMCIA Cards, and Battery Powered Circuits
SC-59
Dim
Min
Max
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
G
G
1.70
2.10
H
H
2.70
3.10
A
D
TOP VIEW
B
C
Mechanical Data
·
·
·
·
·
·
Case: SC-59, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagrams
Weight: 0.008 grams (approx.)
Ordering Information, See Sheet 2
G
S
D
E
M
K
J
L
J
¾
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
DMN100
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current
Continuous
Pulsed
ID
± 1.1
± 4.0
A
Pd
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
500
mW
RqJA
250
K/W
Tj, TSTG
-55 to +150
°C
1. Pulse width £ 300ms, duty cycle £ 2%.
DS30049 Rev. 5 - 2
1 of 3
DMN100
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
BVDSS
30
Test Condition
¾
¾
V
VGS = 0V, ID = 250mA
µA
VDS = 24V, VGS = 0V
VGS = ± 12V, VDS = 0V
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ Tj = 25°C
@ Tj = 125°C
Gate-Body Leakage
IDSS
¾
¾
1.0
10
IGSS
¾
¾
± 100
nA
VGS(th)
1.0
¾
3.0
V
VDS = 10V, ID =1.0mA
W
VGS = 4.5V, ID = 0.5A
VGS = 10V, ID = 1.0A
VDS = 10V, ID =0.5A
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
RDS (ON)
¾
¾
0.170
0.240
gFS
1.3
2.4
¾
S
Input Capacitance
Ciss
¾
150
¾
pF
Output Capacitance
Coss
¾
90
¾
pF
Reverse Transfer Capacitance
Crss
¾
30
¾
pF
Total Gate Charge
Qg
¾
5.5
¾
nC
Gate-to-Source Charge
Qgs
¾
0.8
¾
nC
Gate-to-Drain Charge
Qgd
¾
1.3
¾
nC
Turn-On Delay Time
tD(ON)
¾
10
¾
ns
Turn-Off Delay Time
tD(OFF)
¾
25
¾
ns
Turn-On Rise Time
tr
¾
15
¾
ns
Turn-Off Fall Time
tf
¾
45
¾
ns
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 24V, ID = 1.0A,
VGS = 10V
SWITCHING CHARACTERISTICS
VDD = 10V, ID = 0.5A,
VGS = 5.0V, RGEN = 50W
SOURCE- DRAIN RATINGS (BODY DIODE)
IS
¾
¾
0.54
A
Pulse Source Current
ISM
¾
¾
4.0
A
Forward Voltage
VSD
¾
¾
1.2
V
IF = 1.0A, VGS = 0V
trr
¾
35
¾
ns
IF = 1.0A, di/dt = 50A/ms
Continuous Source Current
Reverse Recovery Time
Notes:
¾
1. Pulse width £ 300ms, duty cycle £ 2%.
Ordering Information
Notes:
¾
(Note 2)
Device
Packaging
Shipping
DMN100-7
SC-59
3000/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX X
DS30049 Rev. 5 - 2
XXX = Product Type Marking Code
X = Assembly Lot No.
[0-9, A-Z, except G, I, J, O, Q, W]
2 of 3
DMN100
4.0
3.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5
ID, DRAIN CURRENT (A)
1.0
VGS = 10V
5.0V
4.5V
4.0V
3.5V
2.5
3.0V
2.0
1.5
1.0
2.5V
0.5
0
0
1
3
2
0.1
Vgs = 10V
0.01
5
4
Vgs = 4.5V
0
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
4.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.30
0.25
0.20
VGS = 4.5V, RDS @ 0.5A
0.15
0.10
VGS = 10V, RDS @ 1.0A
0.05
0
-50
0
50
100
150
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
DS30049 Rev. 5 - 2
4
3
2
VGS = 10V
TA = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs Gate-Source Voltage
3 of 3
DMN100
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