EMI/EMC-Compliant, ±15 kV ESDProtected, RS-232 Line Drivers/Receivers ADM206E/ADM207E/ADM208E/ADM211E/ADM213E FEATURES CONNECTION DIAGRAM 5V INPUT 0.1µF 10V 0.1µF 10V TTL/CMOS INPUTS1 APPLICATIONS Laptop computers Notebook computers Printers Peripherals Modems TTL/CMOS OUTPUTS GENERAL DESCRIPTION All devices fully conform to the EIA-232-E and CCITT V.28 specifications and operate at data rates up to 230 kbps. Shutdown and enable control pins are provided on some of the products (see Table 1). The shutdown function on the ADM211E disables the charge pump and all transmitters and receivers. On the ADM213E the + 12 C1+ 14 C1– 15 C2+ 16 C2– +5V TO +10V VOLTAGE DOUBLER +10V TO –10V VOLTAGE INVERTER VCC 11 V+ 13 V– 17 0.1µF + 6.3V + 0.1µF 0.1µF + 10V T1IN 7 T1 2 T1OUT T2IN 6 T2 3 T2OUT T3IN 20 T3 1 T3OUT T4IN 21 T4 28 T4OUT R1OUT 8 R1 9 R1IN R2OUT 5 R2 4 R2IN R3OUT 26 R3 27 R3IN R4OUT 22 R4 23 R4IN R5OUT 19 R5 18 R5IN 25 SHDN (ADM211E) SHDN (ADM213E) EN (ADM211E) EN (ADM213E) The ADM2xxE is a family of robust RS-232 and V.28 interface devices that operate from a single 5 V power supply. These products are suitable for operation in harsh electrical environments and are compliant with the EU directive on electromagnetic compatibility (EMC) (89/336/EEC). The level of emissions and immunity are both in compliance. EM immunity includes ESD protection in excess of ±15 kV on all I/O lines (IEC 1000-4-2), fast transient burst protection (IEC 100044), and radiated immunity (IEC 1000-4-3). EM emissions include radiated and conducted emissions as required by Information Technology Equipment EN 55022, CISPR 22. + 24 GND ADM211E/ ADM213E RS-232 OUTPUTS RS-232 INPUTS2 10 1 INTERNAL 2 INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT. 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT. 00068-001 Complies with 89/336/EEC EMC directive ESD protection to IEC 1000-4-2 (801-2) Contact discharge: ±8 kV Air-gap discharge: ±15 kV Human body model: ±15 kV EFT/burst immunity (IEC 1000-4-4) Low EMI emissions (EN 55022) Eliminates need for TransZorb® suppressors 230 kbps data rate guaranteed Single 5 V power supply Shutdown mode 1 μW Plug-in upgrade for MAX2xxE Space saving TSSOP package available Figure 1. charge pump, all transmitters, and three of the five receivers are disabled. The remaining two receivers remain active, thereby allowing monitoring of peripheral devices. This feature allows the device to be shut down until a peripheral device begins communication. The active receivers can alert the processor, which can then take the ADM213E out of the shutdown mode. Operating from a single 5 V supply, four external 0.1 μF capacitors are required. The ADM207E and ADM208E are available in 24-lead PDIP, SSOP, available in 28-lead SSOP, TSSOP, and SOIC_W packages. All products are backward compatible with earlier ADM2xx products, facilitating easy upgrading of older designs. Table 1. Selection Table Model Supply Voltage Drivers Receivers ESD Protection Shutdown Enable Packages ADM206E ADM207E ADM208E ADM211E ADM213E 5V 5V 5V 5V 5V 4 5 4 4 4 3 3 4 5 5 ±15 kV ±15 kV ±15 kV ±15 kV ±15 kV Yes No No Yes Yes (SHDN)1 Yes No No Yes Yes (EN) RW-24 N-24-1, RW-24, RS-24, RU-24 N-24-1, RW-24, RS-24, RU-24 RW-28, RS-28, RU-28 RW-28, RS-28, RU-28 1 Two receivers active. Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved. ADM206E/ADM207E/ADM208E/ADM211E/ADM213E TABLE OF CONTENTS Features .............................................................................................. 1 Enable and Shutdown ................................................................ 10 Applications....................................................................................... 1 High Baud Rate........................................................................... 11 General Description ......................................................................... 1 ESD/EFT Transient Protection Scheme .................................. 11 Connection Diagram ....................................................................... 1 ESD Testing (IEC 100042) ..................................................... 11 Revision History ............................................................................... 2 EFT/Burst Testing (IEC 100044)........................................... 12 Specifications..................................................................................... 3 IEC 1000-4-3 Radiated Immunity ........................................... 13 Absolute Maximum Ratings............................................................ 4 Emissions/Interference .............................................................. 14 ESD Caution.................................................................................. 4 Conducted Emissions ................................................................ 14 Pin Configurations and Function Descriptions ........................... 5 Radiated Emissions .................................................................... 14 Typical Performance Characteristics ............................................. 8 Outline Dimensions ....................................................................... 16 Theory of Operation ...................................................................... 10 Ordering Guide .......................................................................... 19 Circuit Description..................................................................... 10 REVISION HISTORY 9/06—Rev. D to Rev. E 3/01—Rev. B to Rev. C Updated Format..................................................................Universal Changes to Figure 1 and Table 1..................................................... 1 Changes to Table 2............................................................................ 3 Changes to Figure 2, Figure 3, and Figure 5.................................. 5 Changes to Figure 7 and Figure 9................................................... 6 Changes to Figure 11........................................................................ 7 Changes to Figure 17........................................................................ 8 Updated Outline Dimensions ....................................................... 16 Changes to Ordering Guide .......................................................... 19 Changes to Features Section ............................................................1 Changes to Specifications Table ......................................................2 Changes to Absolute Maximum Ratings........................................3 Changes to Figure 6 ..........................................................................5 Changes to Typical Performance Characteristics Section ...... 7, 8 Changes to Table V......................................................................... 11 4/05—Rev. C to Rev. D Changes to Specifications Section.................................................. 2 Changes to Ordering Guide ............................................................ 4 Updated Outline Dimensions ......................................................... 6 Rev. E | Page 2 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E SPECIFICATIONS VCC = 5.0 V ± 10%, C1 to C4 = 0.1 μF. All specifications TMIN to TMAX, unless otherwise noted. Table 2. Parameter DC CHARACTERISTICS Operating Voltage Range VCC Power Supply Current SHUTDOWN SUPPLY CURRENT LOGIC Input Pull-Up Current Input Logic Threshold Low, VINL Input Logic Threshold High, VINH Input Logic Threshold High, VINH TTL/CMOS Output Voltage Low, VOL TTL/CMOS Output Voltage High, VOH TTL/CMOS Output Leakage Current RS-232 RECEIVER Input Voltage Range 1 Input Threshold Low Input Threshold High Input Hysteresis Input Resistance RS-232 TRANSMITTER Output Voltage Swing Output Resistance Output Short-Circuit Current TIMING CHARACTERISTICS Maximum Data Rate Receiver Propagation Delay, TPHL, TPLH Receiver Output Enable Time, tER Receiver Output Disable Time, tDR Transmitter Propagation Delay, TPHL, TPLH Transition Region Slew Rate EM IMMUNITY ESD Protection (I/O Pins) Typ Max Unit Test Conditions/Comments 4.5 5.0 3.5 0.2 5.5 13 10 V mA μA No load 10 25 0.8 μA V V V V V μA TIN = GND TIN, EN, EN, SHDN, SHDN TIN EN, EN, SHDN, SHDN IOUT = 1.6 mA IOUT = −40 μA EN = VCC, EN = GND, 0 V ≤ ROUT ≤ VCC 7 V V V V kΩ TA = 0°C to 85°C All transmitter outputs loaded with 3 kΩ to ground VCC = 0 V, VOUT = ±2 V ±20 ±60 V Ω mA 0.4 120 120 1 8 2 kbps μs ns ns μs V/μs RL = 3 kΩ to 7 kΩ, CL = 50 pF to 2500 pF CL = 150 pF kV kV kV V/m Human body model IEC 1000-4-2 air-gap discharge IEC 1000-4-2 contact discharge IEC 1000-4-3 2.0 2.0 0.4 3.5 +0.05 −30 0.8 3 ±5.0 300 ±6 +30 1.3 2.0 0.65 5 2.4 ±9.0 230 RL = 3 kΩ, CL = 2500 pF RL = 3 kΩ, CL = 50 pF to 2500 pF, measured from +3 V to −3 V or −3 V to +3 V Guaranteed by design. Table 3. ADM211E Truth Table SHDN 0 0 1 1 ±10 ±15 ±15 ±8 10 Radiated Immunity 1 Min EN 0 1 X1 X = don’t care. Status Normal operation Normal operation Shutdown Table 4. ADM213E Truth Table TOUT 1:4 Enabled Enabled Disabled ROUT 1:5 Enabled Disabled Disabled SHDN 0 0 1 1 Rev. E | Page 3 of 20 EN 0 1 0 1 Status Shutdown Shutdown Normal operation Normal operation TOUT 1:4 Disabled Disabled Enabled Enabled ROUT 1:3 Disabled Disabled Disabled Enabled ROUT 4:5 Disabled Enabled Disabled Enabled ADM206E/ADM207E/ADM208E/ADM211E/ADM213E ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 5. Parameter VCC V+ V– Input Voltages TIN RIN Output Voltages TOUT ROUT Short-Circuit Duration TOUT Power Dissipation N-24-1 PDIP (Derate 13.5 mW/°C above 70°C) RW-24 SOIC_W (Derate 12 mW/°C above 70°C) RS-24 SSOP (Derate 12 mW/°C above 70°C) RU-24 TSSOP (Derate 12 mW/°C above 70°C) RW-28 SOIC_W (Derate 12 mW/°C above 70°C) RS-28 SSOP (Derate 10 mW/°C above 70°C) RU-28 TSSOP (Derate 12 mW/°C above 70°C) Operating Temperature Range Storage Temperature Range Lead Temperature, Soldering (10 sec) ESD Rating MIL-STD-883B (I/O Pins) IEC 1000-4-2 Air-Gap (I/O Pins) IEC 1000-4-2 Contact (I/O Pins) Rating −0.3 V to +6 V (VCC – 0.3 V) to +14 V +0.3 V to −14 V −0.3 V to (V+ + 0.3 V) ±30 V ESD CAUTION ±15 V −0.3 V to (VCC + 0.3 V) Continuous 1000 mW 900 mW 850 mW 900 mW 900 mW 900 mW 900 mW −40°C to +85°C −65°C to +150°C 300°C ±15 kV ±15 kV ±8 kV Rev. E | Page 4 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS T3OUT 1 24 T4OUT T3OUT 1 24 T4OUT T1OUT 2 23 R2IN T1OUT 2 23 R2IN T2OUT 3 22 R2OUT T2OUT 3 22 R2OUT R1IN 4 21 SHDN R1IN 4 21 T5IN R1OUT 5 20 R1OUT 5 20 T5OUT T2IN 6 T2IN 6 T1IN GND 8 17 R3OUT 16 R3IN VCC 9 16 R3IN 15 V– C1+ 10 15 V– V+ 11 14 C2– C1– 12 13 C2+ 8 17 R3OUT VCC 9 V+ 11 14 C2– C1– 12 13 C2+ 00068-002 T1IN GND C1+ 10 ADM207E TOP VIEW 19 T4IN 7 (Not to Scale) 18 T3IN TOP VIEW 19 T4IN 7 (Not to Scale) 18 T3IN Figure 2. ADM206E Pin Configuration 00068-004 ADM206E EN Figure 4. ADM207E Pin Configuration 5V INPUT 5V INPUT + 0.1µF 16V TTL/CMOS INPUTS1 C1+ 12 C1– 13 C2+ 14 C2– +5V TO +10V VOLTAGE DOUBLER VCC 9 +10V TO –10V VOLTAGE INVERTER V– 15 V+ 11 0.1µF + 6.3V 0.1µF 0.1µF + 16V T1IN 7 T1 2 T1OUT T2IN 6 T2 3 T2OUT T3IN 18 T3 1 T3OUT T4IN 19 T4 24 T4OUT R1OUT 5 R1 4 R1IN R2OUT 22 R2 23 R2IN R3OUT 17 R3 16 R3IN EN 20 ADM206E 21 SHDN GND + TTL/CMOS INPUTS1 RS-232 OUTPUTS RS-232 INPUTS2 TTL/CMOS OUTPUTS + 0.1µF 10V 10 C1+ 12 C1– + 0.1µF 10V 13 C2+ 14 C2– 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT. 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT. VCC 9 +10V TO –10V VOLTAGE INVERTER V– 15 V+ 11 0.1µF + 6.3V + 0.1µF 0.1µF + 10V T1IN 7 T1 2 T1OUT T2IN 6 T2 3 T2OUT T3IN 18 T3 1 T3OUT T4IN 19 T4 24 T4OUT T5IN 21 T5 20 T5OUT R1OUT 5 R1 4 R1IN R2OUT 22 R2 23 R2IN R3OUT 17 R3 16 R3IN RS-232 OUTPUTS RS-232 INPUTS2 ADM207E 8 8 1 INTERNAL 2 INTERNAL +5V TO +10V VOLTAGE DOUBLER GND 00068-003 TTL/CMOS OUTPUTS 10 1 INTERNAL 2 INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT. 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT. Figure 5. ADM207E Typical Operating Circuit Figure 3. ADM206E Typical Operating Circuit Rev. E | Page 5 of 20 00068-005 + 0.1µF 6.3V ADM206E/ADM207E/ADM208E/ADM211E/ADM213E T3OUT 1 28 T4OUT T1OUT 2 27 R3IN T2OUT 3 26 R3OUT R2IN 4 25 SHDN T2OUT 1 24 T3OUT T1OUT 2 23 R3IN R2IN 3 22 R3OUT R2OUT 4 21 T4IN T2IN 6 T1IN 5 20 T4OUT T1IN 7 R1OUT 6 ADM208E R2OUT 5 24 EN ADM211E 23 R4IN TOP VIEW 22 R4OUT R1OUT 8 (Not to Scale) 21 T4IN TOP VIEW 19 T3IN 7 (Not to Scale) 18 T2IN GND 8 17 R4OUT VCC 9 16 R4IN VCC 11 18 R5IN 15 V– C1+ 12 17 V– V+ 11 14 C2– C1– 12 13 C2+ Figure 6. ADM208E Pin Configuration R1IN 9 20 T3IN GND 10 19 R5OUT V+ 13 16 C2– C1– 14 15 C2+ 00068-008 C1+ 10 00068-006 R1IN Figure 8. ADM211E Pin Configuration 5V INPUT 5V INPUT TTL/CMOS INPUTS1 + 0.1µF 10V 10 C1+ 12 C1– + 0.1µF 10V 13 C2+ 14 C2– +10V TO –10V VOLTAGE INVERTER V+ 11 V– 15 0.1µF + 6.3V 5 T1 2 T1OUT T2IN 18 T2 1 T2OUT T3IN 19 T3 24 T3OUT T4IN 21 T4 20 T4OUT R1 6 7 + 0.1µF 0.1µF 10V TTL/CMOS INPUTS1 RS-232 OUTPUTS R1IN R2OUT 4 R2 3 R2IN R3OUT 22 R3 23 R3IN R4OUT 17 R4 16 R4IN GND 0.1µF 10V 0.1µF + 10V T1IN R1OUT TTL/CMOS OUTPUTS +5V TO +10V VOLTAGE DOUBLER VCC 9 TTL/CMOS OUTPUTS RS-232 INPUTS2 ADM208E 8 + + 12 C1+ 14 C1– 15 C2+ 16 C2– +5V TO +10V VOLTAGE DOUBLER VCC 11 +10V TO –10V VOLTAGE INVERTER V– 17 V+ 13 0.1µF + 6.3V 0.1µF 0.1µF + 10V T1IN 7 T1 2 T1OUT T2IN 6 T2 3 T2OUT T3IN 20 T3 1 T3OUT T4IN 21 T4 28 T4OUT R1OUT 8 R1 9 R1IN R2OUT 5 R2 4 R2IN R3OUT 26 R3 27 R3IN R4OUT 22 R4 23 R4IN R5OUT 19 R5 18 R5IN EN 24 25 SHDN GND + RS-232 OUTPUTS RS-232 INPUTS2 ADM211E 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT. 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT. Figure 7. ADM208E Typical Operating Circuit 1 INTERNAL 2 INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT. 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT. Figure 9. ADM211E Typical Operating Circuit Rev. E | Page 6 of 20 00068-009 1 INTERNAL 2 INTERNAL 00068-007 10 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E 5V INPUT T3OUT 1 28 T4OUT T1OUT 2 27 R3IN 26 R3OUT T2OUT 3 R2IN 4 25 SHDN 0.1µF 16V 24 EN R2OUT 5 T2IN 6 0.1µF 16V ADM213E 12 C1+ 14 C1– + 15 C2+ 16 C2– +5V TO +10V VOLTAGE DOUBLER +10V TO –10V VOLTAGE INVERTER VCC 11 V+ 13 V– 17 0.1µF + 6.3V + 0.1µF 0.1µF + 16V 23 R4IN1 TOP VIEW 22 R4OUT1 R1OUT 8 (Not to Scale) 21 T4IN R1IN 9 20 T3IN GND 10 19 R5OUT1 VCC 11 18 R5IN1 C1+ 12 17 V– V+ 13 16 C2– C1– 14 15 C2+ 1 ACTIVE IN SHUTDOWN. TTL/CMOS INPUTS1 00068-010 T1IN 7 + Figure 10. ADM213E Pin Configuration TTL/CMOS OUTPUTS T1IN 7 T1 2 T1OUT T2IN 6 T2 3 T2OUT T3IN 20 T3 1 T3OUT T4IN 21 T4 28 T4OUT R1OUT 8 R1 9 R1IN R2OUT 5 R2 4 R2IN R3OUT 26 R3 27 R3IN R4OUT3 22 R4 23 R4IN3 R5OUT3 19 R5 18 R5IN3 EN 24 25 SHDN GND ADM213E RS-232 OUTPUTS RS-232 INPUTS2 1 INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT. 2 INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT. 3 ACTIVE IN SHUTDOWN. 00068-011 10 Figure 11. ADM213E Typical Operating Circuit Table 6. Pin Function Descriptions Mnemonic VCC V+ V– GND C1+, C1– C2+, C2– TIN TOUT RIN ROUT EN/EN SHDN/SHDN Function Power Supply Input (5 V ± 10%). Internally Generated Positive Supply (+9 V nominal). Internally Generated Negative Supply (−9 V nominal). Ground Pin. Must be connected to 0 V. External Capacitor 1 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitors (up to 47 μF) can be used. External Capacitor 2 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitors (up to 47 μF) can be used. Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kΩ pull-up resistor to VCC is connected on each input. Transmitter (Driver) Outputs. These are RS-232 signal levels (typically ±9 V). Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor to GND is connected on each input. Receiver Outputs. These are TTL/CMOS output logic levels. Receiver Enable (active high on ADM213E, active low on ADM211E). This input is used to enable/disable the receiver outputs. With EN = low for the ADM211E (EN = high for the ADM213E), the receiver outputs are enabled. With EN = high for the ADM211E (EN = low for the ADM213E), the receiver outputs are placed in a high impedance state. (See Table 3 and Table 4.) Shutdown Control (active low on ADM213E, active high on ADM211E). When the ADM211E is in shutdown, the charge pump is disabled, the transmitter outputs are turned off, and all receiver outputs are placed in a high impedance state. When the ADM213E is in shutdown, the charge pump is disabled, the transmitter outputs are turned off, and Receiver R1 to Receiver R3 are placed in a high impedance state; Receiver R4 and Receiver R5 on the ADM213E continue to operate normally during shutdown. (See Table 3 and Table 4.) Power consumption for all parts reduces to 5 μW in shutdown. Rev. E | Page 7 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E TYPICAL PERFORMANCE CHARACTERISTICS 80 80 70 70 LIMIT 60 60 50 (dBµV) 40 30 LIMIT 40 30 20 20 00068-012 0 0.33 0.6 1 3 6 LOG FREQUENCY (MHz) 18 10 30 0 00068-015 10 START 30.0MHz 9 9 Tx O/P HI 5 5 3 3 Tx O/P (V) Tx O/P (V) Tx O/P HI LOADED 7 7 1 –1 1 –1 –3 –3 –5 Tx O/P LO 00068-013 –5 –7 STOP 200.0MHz Figure 15. EMC Radiated Emissions Figure 12. EMC Conducted Emissions 0 500 1000 1500 2000 LOAD CAPACITANCE (pF) 2500 –7 Tx O/P LO LOADED –9 4.0 3000 Figure 13. Transmitter Output Voltage High/Low vs. Load Capacitance (230 kbps) 00068-016 (dBµV) 50 4.5 5.0 VCC (V) 5.5 6.0 Figure 16. Transmitter Output Voltage vs. Power Supply Voltage 15 10 1 Tx O/P HI SHDN T V+ 2 0 T 3 –5 –10 –15 0 2 4 6 LOAD CURRENT (mA) 8 10 V– CH1 CH3 5.00V 5.00V CH2 5.00V M 50.0µs CH1 3.1V V+, V– EXITING SHDN Figure 17. Charge Pump V+, V− Exiting Shutdown Figure 14. Transmitter Output Voltage vs. Load Current Rev. E | Page 8 of 20 00068-017 Tx O/P LO 00068-014 Tx O/P (V) 5 T ADM206E/ADM207E/ADM208E/ADM211E/ADM213E 350 15 300 V+ 10 V– 5 V+/V– (V) 200 150 V+ V– 4.7 4.9 5.1 5.3 5.5 VCC (V) Figure 18. Charge Pump Impedance vs. Power Supply Voltage Rev. E | Page 9 of 20 –10 –15 00068-019 50 0 4.5 0 –5 100 00068-018 IMPEDANCE (Ω) 250 0 5 10 LOAD CURRENT (mA) 15 Figure 19. Charge Pump V+, V− vs. Load Current 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E THEORY OF OPERATION All RS-232 inputs and outputs contain protection against electrostatic discharges up to ±15 kV and electrical fast transients up to ±2 kV. This ensures compliance to IEC 100042 and IEC 100044 requirements. The devices are ideally suited for operation in electrically harsh environments or where RS-232 cables are plugged/unplugged frequently. They are also immune to high RF field strengths without special shielding precautions. C1 S2 GND + C3 S4 V+ = 2VCC + VCC INTERNAL OSCILLATOR Figure 20. Charge Pump Voltage Doubler FROM VOLTAGE DOUBLER S1 V+ S2 GND S3 C2 + S4 C4 + INTERNAL OSCILLATOR GND V– = –(V+) 00068-021 Features include low power consumption, high transmission rates, and compliance with the EU directive on EMC, which includes protection against radiated and conducted interfereence, including high levels of electrostatic discharge. S3 S1 VCC 00068-020 The ADM206E/ADM207E/ADM208E/ADM211E/ADM213E are ruggedized RS-232 line drivers/receivers that operate from a single 5 V supply. Step-up voltage converters coupled with level shifting transmitters and receivers allow RS-232 levels to be developed while operating from a single 5 V supply. Figure 21. Charge Pump Voltage Inverter Transmitter (Driver) Section The drivers convert 5 V logic input levels into EIA-232 output levels. With VCC = 5 V and driving an EIA-232 load, the output voltage swing is typically ±9 V. Emissions are also controlled to within very strict limits. TTL/CMOS technology is used to keep the power dissipation to an absolute minimum, allowing maximum battery life in portable applications. The ADM2xxE is a modification, enhancement, and improvement to the ADM2xx family and its derivatives. It is essentially plug-in compatible and does not have materially different applications. Unused inputs can be left unconnected, as an internal 400 kΩ pull-up resistor pulls them high, forcing the outputs into a low state. The input pull-up resistors typically source 8 μA when grounded, so unused inputs should either be connected to VCC or left unconnected in order to minimize power consumption. CIRCUIT DESCRIPTION Receiver Section The internal circuitry consists of four main sections: The receivers are inverting level shifters that accept EIA-232 input levels and translate them into 5 V logic output levels. The inputs have internal 5 kΩ pull-down resistors to ground and are protected against overvoltages of up to ±25 V. The guaranteed switching thresholds are 0.4 V minimum and 2.4 V maximum. Unconnected inputs are pulled to 0 V by the internal 5 kΩ pulldown resistor. This, therefore, results in a Logic 1 output level for unconnected inputs or for inputs connected to GND. • • • • A charge pump voltage converter. 5 V logic to EIA-232 transmitters. EIA-232 to 5 V logic receivers. Transient protection circuit on all I/O lines. Charge Pump DC-to-DC Voltage Converter The charge pump voltage converter consists of a 200 kHz oscillator and a switching matrix. The converter generates a ±10 V supply from the input 5 V level. This is done in two stages using a switched capacitor technique as illustrated in Figure 20 and Figure 21. First, the 5 V input supply is doubled to 10 V using Capacitor C1 as the charge storage element. The 10 V level is then inverted to generate −10 V using C2 as the storage element. Capacitor C3 and Capacitor C4 are used to reduce the output ripple. If desired, larger capacitors (up to 47 μF) can be used for Capacitor C1 to Capacitor C4. This facilitates direct substitution with older generation charge pump RS-232 transceivers. The V+ and V– supplies can also be used to power external circuitry, if the current requirements are small (see the Typical Performance Characteristics section). The receivers have Schmitt trigger inputs with a hysteresis level of 0.65 V. This ensures error-free reception for both noisy inputs and for inputs with slow transition times. ENABLE AND SHUTDOWN Table 3 and Table 4 are truth tables for the enable and shutdown control signals. The enable function is intended to facilitate data bus connections where it is desirable to tristate the receiver outputs. In the disabled mode, all receiver outputs are placed in a high impedance state. The shutdown function is intended to shut down the device, thereby minimizing the quiescent current. In shutdown, all transmitters are disabled and all receivers on the ADM211E are tristated. Rev. E | Page 10 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E On the ADM213E, Receiver R4 and Receiver R5 remain enabled in shutdown. Note that the transmitters are disabled but are not tristated in shutdown; it is not permitted to connect multiple (RS-232) driver outputs together. The shutdown feature is very useful in battery-operated systems since it reduces the power consumption to 1 μW. During shutdown, the charge pump is also disabled. The shutdown control input is active high on the ADM211E, and it is active low on the ADM213E. When exiting shutdown, the charge pump is restarted, and it takes approximately 100 μs for it to reach its steady state operating condition. HIGH BAUD RATE The ADM2xxE feature high slew rates, permitting data transmission rates well in excess of the EIA-232-E specifications. RS-232 levels are maintained at data rates up to 230 kbps, even under worst-case loading conditions. This allows for high speed data links between two terminals, making it suitable for the new generation modem standards that require data rates of 200 kbps. The slew rate is controlled internally to less than 30 V/μs to minimize EMI interference. protection structure is shown in Figure 24 and Figure 25. Each input and output contains two back-to-back high speed clamping diodes. During normal operation, with maximum RS232 signal levels, the diodes have no effect because one or the other is reverse biased, depending on the polarity of the signal. If, however, the voltage exceeds about ±50 V, reverse breakdown occurs, and the voltage is clamped at this level. The diodes are large p-n junctions designed to handle the instantaneous current surges that can exceed several amperes. The transmitter outputs and receiver inputs have a similar protection structure. The receiver inputs can also dissipate some of the energy through the internal 5 kΩ resistor to GND as well as through the protection diodes. The protection structure achieves ESD protection up to ±15 kV and EFT protection up to ±2 kV on all RS-232 I/O lines. The methods used to test the protection scheme are discussed in the ESD Testing (IEC 100042) and EFT/Burst Testing (IEC 100044) sections. RECEIVER INPUT 3V R1 RX D1 EN INPUT RIN VOH 00068-024 D2 0V tDR Figure 24. Receiver Input Protection Scheme VOH –0.1V RECEIVER OUTPUT TOUT RX VOL 00068-022 NOTES 1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E. D1 TRANSMITTER OUTPUT D2 Figure 22. Receiver Disable Timing 00068-025 VOL +0.1V Figure 25. Transmitter Output Protection Scheme 3V EN INPUT ESD TESTING (IEC 1000-4-2) 0V tER +3.5V RECEIVER OUTPUT NOTES 1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E. 00068-023 +0.8V Figure 23. Receiver Enable Timing ESD/EFT TRANSIENT PROTECTION SCHEME The ADM2xxE use protective clamping structures on all inputs and outputs that clamp the voltage to a safe level and dissipate the energy present in ESD (electrostatic) and EFT (electrical fast transient) discharges. A simplified schematic of the IEC 1000-4-2 (previously IEC 801-2) specifies compliance testing using two coupling methods, contact discharge and airgap discharge. Contact discharge calls for a direct connection to the unit being tested. Air-gap discharge uses a higher test voltage but does not make direct contact with the unit under test. With air-gap discharge, the discharge gun is moved toward the unit under test, developing an arc across the air gap. This method is influenced by humidity, temperature, barometric pressure, distance, and rate of closure of the discharge gun. The contact discharge method, while less realistic, is more repeatable and is gaining acceptance in preference to the air-gap method. Although very little energy is contained within an ESD pulse, the extremely fast rise time, coupled with high voltages, can cause failures in unprotected semiconductors. Catastrophic Rev. E | Page 11 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E destruction can occur immediately because of arcing or heating. Even if catastrophic failure does not occur immediately, the device can suffer from parametric degradation that can result in degraded performance. The cumulative effects of continuous exposure can eventually lead to complete failure. 100 IPEAK (%) 90 I/O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I/O cable can result in a static discharge that can damage or destroy the interface product connected to the I/O port. Traditional ESD test methods, such as the MIL-STD-883B method 3015.7, do not fully test product susceptibility to this type of discharge. This test was intended to test product susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the traditional test and the IEC test: • • • The IEC test is much more stringent in terms of discharge energy. The peak current injected is over four times greater. The current rise time is significantly faster in the IEC test. The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device being tested. This test, therefore, is more representtative of a real-world I/O discharge, where the equipment is operating normally with power applied. However, both tests should be performed to ensure maximum protection both during handling and later during field service. R1 H. BODY MIL-STD-883B IEC 1000-4-2 60ns 00068-028 TIME t 30ns Figure 28. IEC 1000-4-2 ESD Current Waveform ADM2xxE products are tested using both of the previously mentioned test methods. Pins are tested with respect to all other pins as per the MIL-STD-883B specification. In addition, all I/O pins are tested per the IEC test specification. The products are tested under the following conditions: • • • Power on (normal operation). Power on (shutdown mode). Power off. There are four levels of compliance defined by IEC 1000-4-2. ADM2xxE products meet the most stringent compliance level both for contact and for air-gap discharge. This means that the products are able to withstand contact discharges in excess of 8 kV and air-gap discharges in excess of 15 kV. Level 1 2 3 4 DEVICE UNDER TEST C1 ESD TEST METHOD 0.1ns TO 1ns Table 7. IEC 1000-4-2 Compliance Levels R2 R2 C1 1.5kΩ 330Ω 100pF 150pF 00068-026 HIGH VOLTAGE GENERATOR 10 Contact Discharge (kV) 2 4 6 8 Air-Gap Discharge (kV) 2 4 8 15 Table 8. ADM2xxE ESD Test Results Figure 26. ESD Test Standards ESD Test Method MIL-STD-883B IEC 1000-4-2 Contact Air-Gap 100 IPEAK (%) 90 I/O Pin (kV) ±15 ±8 ±15 EFT/BURST TESTING (IEC 1000-4-4) 10 tRL tDL TIME t Figure 27. Human Body Model ESD Current Waveform 00068-027 36.8 IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst immunity. Electrical fast transients occur because of arcing contacts in switches and relays. The tests simulate the interference generated when, for example, a power relay disconnects an inductive load. A spark is generated due to the well-known back EMF effect. In fact, the spark consists of a Rev. E | Page 12 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E burst of sparks as the relay contacts separate. The voltage appearing on the line, therefore, consists of a burst of extremely fast transient impulses. A similar effect occurs when switching on fluorescent lights. The fast transient burst test defined in IEC 1000-4-4 simulates this arcing; its waveform is illustrated in Figure 29. It consists of a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms intervals. It is specified for both power and data lines. V • • ADM2xxE products meet Classification 2 and have been tested under worst-case conditions using unshielded cables. Data transmission during the transient condition is corrupted, but it can resume immediately following the EFT event without user intervention. HIGH VOLTAGE SOURCE t 15ms RC CC RM L CD ZS 5ns V 50Ω OUTPUT 00068-030 300ms Classification 3: Temporary degradation or loss of function or performance that requires operator intervention or system reset. Classification 4: Degradation or loss of function that is not recoverable due to damage. Figure 30. IEC 1000-4-4 Fast Transient Generator IEC 1000-4-3 RADIATED IMMUNITY t 0.2ms/0.4ms 00068-029 50ns Figure 29. IEC 1000-4-4 Fast Transient Waveform Table 9. Level 1 2 3 4 V Peak (kV) PSU 0.5 1 2 4 V Peak (kV) I/O 0.25 0.5 1 2 A simplified circuit diagram of the actual EFT generator is illustrated in Figure 30. The transients are coupled onto the signal lines using an EFT coupling clamp. The clamp is 1 m long and surrounds the cable completely, providing maximum coupling capacitance (50 pF to 200 pF typical) between the clamp and the cable. High energy transients are capacitively coupled onto the signal lines. Fast rise times (5 ns), as specified by the standard, result in very effective coupling. Because high voltages are coupled onto the signal lines, this test is very severe. The repetitive transients can often cause problems where single pulses do not. Destructive latch-up can be induced due to the high energy content of the transients. Note that this stress is applied while the interface products are powered up and are transmitting data. The EFT test applies hundreds of pulses with higher energy than ESD. Worst-case transient current on an I/O line can be as high as 40 A. Test results are classified according to the following: • • Classification 1: Normal performance within specification limits. Classification 2: Temporary degradation or loss of performance that is self recoverable. IEC 1000-4-3 (previously IEC 801-3) describes the measurement method and defines the levels of immunity to radiated electromagnetic fields. It was originally intended to simulate the electromagnetic fields generated by portable radio transceivers or any other devices that generate continuous wave-radiated EM energy. Its scope has since been broadened to include spurious EM energy that can be radiated from fluorescent lights, thyristor drives, inductive loads, and other sources. Testing for immunity involves irradiating the device with an EM field. There are various methods of achieving this, including use of anechoic chamber, stripline cell, TEM cell, and GTEM cell. A stripline cell consists of two parallel plates with an electric field developed between them. The device under test is placed within the cell and exposed to the electric field. There are three severity levels having field strengths ranging from 1 V/m to 10 V/m. Results are classified in a similar fashion to those for IEC 100044. • • • • Classification 1: Normal operation. Classification 2: Temporary degradation or loss of function that is self recoverable when the interfering signal is removed. Classification 3: Temporary degradation or loss of function that requires operator intervention or system reset when the interfering signal is removed. Classification 4: Degradation or loss of function that is not recoverable due to damage. The ADM2xxE family of products easily meets Classification 1 at the most stringent requirement (Level 3). In fact, field strengths up to 30 V/m showed no performance degradation, and errorfree data transmission continued even during irradiation. Rev. E | Page 13 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E Table 10. Test Severity Levels (IEC 1000-4-3) Level 1 2 3 ø1 Field Strength (V/m) 1 3 10 ø2 EMISSIONS/INTERFERENCE SWITCHING GLITCHES 00068-032 EN 55022, CISPR 22 defines the permitted limits of radiated and conducted interference from information technology (IT) equipment. The objective of the standard is to minimize the level of emissions, both conducted and radiated. Figure 32. Switching Glitches 80 For ease of measurement and analysis, conducted emissions are assumed to predominate below 30 MHz, and radiated emissions are assumed to predominate above 30 MHz. 70 The ADM2xxE have been designed to minimize the switching transients and ensure break-before-make switching, thereby minimizing conducted emissions. This results in emission levels well below specified limits. Other than the recommended 0.1 μF capacitor, no additional filtering/decoupling is required. Conducted emissions are measured by monitoring the line power supply. The equipment used consists of a line impedance stabilizing network (LISN) that essentially presents a fixed impedance at RF and a spectrum analyzer. The spectrum analyzer scans for emissions up to 30 MHz. A plot for the ADM211E is shown in Figure 33. S2 GND S3 C1 + S4 C3 + INTERNAL OSCILLATOR V+ = 2VCC VCC 00068-031 S1 (dBµV) 50 40 30 20 10 0 00068-033 This is a measure of noise that is conducted onto the line power supply. Switching transients from the charge pump that are 20 V in magnitude and that contain significant energy can lead to conducted emissions. Another source of conducted emissions is the overlap in switch-on times in the charge pump voltage converter. In the voltage doubler shown in Figure 31, if S2 has not fully turned off before S4 turns on, a transient current glitch occurs between VCC and GND that results in conducted emissions. Therefore, it is important that the switches in the charge pump guarantee break-before-make switching under all conditions so instantaneous short-circuit conditions do not occur. VCC LIMIT 60 CONDUCTED EMISSIONS 0.33 0.6 1 3 6 LOG FREQUENCY (MHz) 18 30 Figure 33. Conducted Emissions Plot RADIATED EMISSIONS Radiated emissions are measured at frequencies in excess of 30 MHz. RS-232 outputs designed for operation at high baud rates while driving cables can radiate high frequency EM energy. The previously described causes of conducted emissions can also cause radiated emissions. Fast RS-232 output transitions can radiate interference, especially when lightly loaded and driving unshielded cables. Charge pump devices are also prone to radiating noise due to the high frequency oscillator and the high voltages being switched by the charge pump. The move toward smaller capacitors in order to conserve board space has resulted in higher frequency oscillators being employed in the charge pump design, resulting in higher levels of conducted and radiated emissions. The RS-232 outputs on the ADM2xxE products feature a controlled slew rate in order to minimize the level of radiated emissions, yet they are fast enough to support data rates of up to 230 kbps. Figure 31. Charge Pump Voltage Doubler Rev. E | Page 14 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E 80 RADIATED NOISE 70 DUT 60 TO RECEIVER 50 (dBµV) ADJUSTABLE ANTENNA 00068-034 TURNTABLE LIMIT 40 30 Figure 34. Radiated Emissions Test Setup Testing for radiated emissions was carried out in a shielded anechoic chamber. Rev. E | Page 15 of 20 20 10 0 00068-035 Figure 35 shows a plot of radiated emissions vs. frequency. The levels of emissions are well within specifications, without the need for any additional shielding or filtering components. The ADM2xxE were operated at maximum baud rates and configured like a typical RS-232 interface. START 30.0MHz STOP 200.0MHz Figure 35. Radiated Emissions ADM206E/ADM207E/ADM208E/ADM211E/ADM213E OUTLINE DIMENSIONS 1.280 (32.51) 1.250 (31.75) 1.230 (31.24) 24 13 1 12 0.280 (7.11) 0.250 (6.35) 0.240 (6.10) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) PIN 1 0.100 (2.54) BSC 0.060 (1.52) MAX 0.210 (5.33) MAX 0.015 (0.38) MIN 0.150 (3.81) 0.130 (3.30) 0.115 (2.92) 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) 0.195 (4.95) 0.130 (3.30) 0.115 (2.92) 0.015 (0.38) GAUGE PLANE SEATING PLANE 0.430 (10.92) MAX 0.005 (0.13) MIN 0.014 (0.36) 0.010 (0.25) 0.008 (0.20) 0.070 (1.78) 0.060 (1.52) 0.045 (1.14) COMPLIANT TO JEDEC STANDARDS MS-001-AF CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS. Figure 36. 24-Lead Plastic Dual In-Line Package [PDIP] (N-24-1) Dimensions shown in inches and (millimeters) 15.60 (0.6142) 15.20 (0.5984) 13 24 7.60 (0.2992) 7.40 (0.2913) 12 2.65 (0.1043) 2.35 (0.0925) 0.30 (0.0118) 0.10 (0.0039) COPLANARITY 0.10 10.65 (0.4193) 10.00 (0.3937) 1.27 (0.0500) BSC 0.51 (0.0201) 0.31 (0.0122) SEATING PLANE 0.75 (0.0295) 0.25 (0.0098) 8° 0° 0.33 (0.0130) 0.20 (0.0079) COMPLIANT TO JEDEC STANDARDS MS-013-AD CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 37. 24-Lead Standard Small Outline Package [SOIC_W] Wide Body (RW-24) Dimensions shown in millimeters and (inches) Rev. E | Page 16 of 20 45° 1.27 (0.0500) 0.40 (0.0157) 060706-A 1 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E 18.10 (0.7126) 17.70 (0.6969) 15 28 7.60 (0.2992) 7.40 (0.2913) 1 10.65 (0.4193) 10.00 (0.3937) 14 2.65 (0.1043) 2.35 (0.0925) 0.30 (0.0118) 0.10 (0.0039) COPLANARITY 0.10 1.27 (0.0500) BSC SEATING PLANE 0.51 (0.0201) 0.31 (0.0122) 0.75 (0.0295) 0.25 (0.0098) 45° 8° 0° 1.27 (0.0500) 0.40 (0.0157) 0.33 (0.0130) 0.20 (0.0079) 060706-A COMPLIANT TO JEDEC STANDARDS MS-013-AE CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 38. 28-Lead Standard Small Outline Package [SOIC_W] Wide Body (RW-28) Dimensions shown in millimeters and (inches) 8.50 8.20 7.90 13 24 5.60 5.30 5.00 1 8.20 7.80 7.40 12 0.65 BSC 0.38 0.22 SEATING PLANE 8° 4° 0° COMPLIANT TO JEDEC STANDARDS MO-150-AG Figure 39. 24-Lead Shrink Small Outline Package [SSOP] (RS-24) Dimensions shown in millimeters Rev. E | Page 17 of 20 0.95 0.75 0.55 060106-A 0.05 MIN COPLANARITY 0.10 0.25 0.09 1.85 1.75 1.65 2.00 MAX ADM206E/ADM207E/ADM208E/ADM211E/ADM213E 10.50 10.20 9.90 15 28 5.60 5.30 5.00 1 8.20 7.80 7.40 14 0.25 0.09 1.85 1.75 1.65 0.38 0.22 0.05 MIN COPLANARITY 0.10 0.65 BSC SEATING PLANE 8° 4° 0° 0.95 0.75 0.55 060106-A 2.00 MAX COMPLIANT TO JEDEC STANDARDS MO-150-AH Figure 40. 28-Lead Shrink Small Outline Package [SSOP] (RS-28) Dimensions shown in millimeters 7.90 7.80 7.70 24 13 4.50 4.40 4.30 1 6.40 BSC 12 PIN 1 0.65 BSC 0.15 0.05 0.30 0.19 1.20 MAX SEATING PLANE 0.10 COPLANARITY 0.20 0.09 0.75 0.60 0.45 8° 0° COMPLIANT TO JEDEC STANDARDS MO-153-AD Figure 41. 24-Lead Thin Shrink Small Outline Package [TSSOP] (RU-24) Dimensions shown in millimeters 9.80 9.70 9.60 28 15 4.50 4.40 4.30 1 6.40 BSC 14 PIN 1 0.65 BSC 0.15 0.05 COPLANARITY 0.10 0.30 0.19 1.20 MAX SEATING PLANE 0.20 0.09 8° 0° 0.75 0.60 0.45 COMPLIANT TO JEDEC STANDARDS MO-153-AE Figure 42. 28-Lead Thin Shrink Small Outline Package [TSSOP] (RU-28) Dimensions shown in millimeters Rev. E | Page 18 of 20 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E ORDERING GUIDE Model ADM206EAR ADM206EAR-REEL ADM206EARZ 1 ADM206EARZ-REEL1 ADM207EAN ADM207EANZ1 ADM207EAR ADM207EAR-REEL ADM207EARZ1 ADM207EARZ-REEL1 ADM207EARS ADM207EARS-REEL ADM207EARU ADM207EARU-REEL ADM207EARU-REEL7 ADM207EARUZ1 ADM207EARUZ-REEL71 ADM208EAN ADM208EANZ1 ADM208EAR ADM208EAR-REEL ADM208EARZ1 ADM208EARZ-REEL1 ADM208EARS ADM208EARS-REEL ADM208EARSZ1 ADM208EARSZ-REEL1 ADM208EARU ADM208EARU-REEL ADM208EARU-REEL7 ADM208EARUZ1 ADM208EARUZ-REEL1 ADM211EAR ADM211EAR-REEL ADM211EARZ1 ADM211EARZ-REEL1 ADM211EARS ADM211EARS-REEL ADM211EARSZ1 ADM211EARSZ-REEL1 ADM211EARU ADM211EARU-REEL ADM211EARU-REEL7 ADM211EARUZ1 ADM211EARUZ-REEL1 ADM211EARUZ-REEL71 Temperature Range −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C Package Description 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead PDIP 24-Lead PDIP 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SSOP 24-Lead SSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead PDIP 24-Lead PDIP 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SOIC_W 24-Lead SSOP 24-Lead SSOP 24-Lead SSOP 24-Lead SSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead TSSOP 24-Lead TSSOP 28-Lead SOIC_W 28-Lead SOIC_W 28-Lead SOIC_W 28-Lead SOIC_W 28-Lead SSOP 28-Lead SSOP 28-Lead SSOP 28-Lead SSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP Rev. E | Page 19 of 20 Package Option RW-24 RW-24 RW-24 RW-24 N-24-1 N-24-1 RW-24 RW-24 RW-24 RW-24 RS-24 RS-24 RU-24 RU-24 RU-24 RU-24 RU-24 N-24-1 N-24-1 RW-24 RW-24 RW-24 RW-24 RS-24 RS-24 RS-24 RS-24 RU-24 RU-24 RU-24 RU-24 RU-24 RW-28 RW-28 RW-28 RW-28 RS-28 RS-28 RS-28 RS-28 RU-28 RU-28 RU-28 RU-28 RU-28 RU-28 ADM206E/ADM207E/ADM208E/ADM211E/ADM213E Model ADM213EAR ADM213EAR-REEL ADM213EARZ1 ADM213EARZ-REEL1 ADM213EARS ADM213EARS-REEL ADM213EARSZ1 ADM213EARSZ-REEL1 ADM213EARU ADM213EARU-REEL ADM213EARU-REEL7 ADM213EARUZ1 ADM213EARUZ-REEL1 ADM213EARUZ-REEL71 1 Temperature Range −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C −40°C to +85°C Package Description 28-Lead SOIC_W 28-Lead SOIC_W 28-Lead SOIC_W 28-Lead SOIC_W 28-Lead SSOP 28-Lead SSOP 28-Lead SSOP 28-Lead SSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP 28-Lead TSSOP Z = Pb-free part. ©2006 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C00068-0-9/06(E) Rev. E | Page 20 of 20 Package Option RW-28 RW-28 RW-28 RW-28 RS-28 RS-28 RS-28 RS-28 RU-28 RU-28 RU-28 RU-28 RU-28 RU-28