TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED C D (2 pls) E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N • SUITABLE FOR BROAD BAND APPLICATIONS DT PIN 1 SOURCE (COMMON) PIN 2 GATE • LOW Crss PIN 3 SOURCE (COMMON) PIN 4 SOURCE (COMMON) • SIMPLE BIAS CIRCUITS PIN 5 DRAIN • LOW NOISE DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 175W 70V ±20V 20A –65 to 150°C 200°C Prelim. 6/99 D1004UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VGS(th) Gate Threshold Voltage * Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 28V VGS = 0 4 mA VGS = 20V VDS = 0 1 µA ID = 10mA VDS = VGS 7 V ID = 4A gfs Forward Transconductance * VDS = 10V GPS Common Source Power Gain PO = 80W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 175MHz IDQ = 0.4A 70 1 3.2 S 16 dB 50 % 20:1 — Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 240 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 120 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 10 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Max. 1.0°C / W Prelim. 6/99 D1004UK 150 80 150 22 125 70 125 20 100 60 100 18 75 16 P out Efficiency 75 50 W % VDS = 28V 50 IDQ = 0.4A f = 175MHz 25 P out Gain dB W 40 50 30 25 14 VDS = 28V IDQ = 0.4A 12 f = 175MHz 0 0 1 2 3 4 5 P in W 6 7 8 20 0 10 0 1 2 3 4 5 P in W Pout Drain Efficiency Figure 1 – Power Output and Efficiency vs. Power Input. 6 7 8 Pout Gain Figure 2 – Power Output & Gain vs. Power Input. -20 D1004UK -25 IMD OPTIMUM SOURCE AND LOAD IMPEDANCE -30 dBc VDS = 28V -35 Frequency MHz 175MHz f1 = 175.0MHz f2 = 175.1MHz -40 IDQ = 0.4A -45 10 20 30 40 50 P out W PEP 60 70 80 ZS ZL Ω Ω 2.2 + j1.9 3.2 - j0.5 90 IMD3 Figure 3 – IMD vs. Output Power. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99 D1004UK 12Ω 10kΩ Gate-Bias +28V L4 100nF 22µF 10nF 10kΩ D1004K 8 x5 mm contact pad L3 5.1nF 5.1nF 1-70pF L1 T1 L2 T2 1-70pF 1-70pF T3 1-70pF 8 x5 mm contact pad D1004UK 175MHz TEST FIXTURE Substrate 1.6mm PTFE/ glass, Er= 2.5 All microstrip lines W=4.4mm T1 T2 T3 7.5mm 6mm 8mm Semelab plc. L1 L2 L3 L4 Hairpin loop 16swg 13mm dia Hairpin loop 16swg 11mm dia 10 turns 18swg enamelled copper wire, 4mm i.d. 12 turns 18swg enamelled copper wire on 22.7mm o.d. ferrite core Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99