MOTOROLA MMBT2369LT1 Switching transistor Datasheet

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SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
3
NPN Silicon
*Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Vdc
Collector – Emitter Voltage
VCES
40
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
4.5
Vdc
IC
200
mAdc
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Collector Current — Continuous
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
15
—
—
40
—
—
40
—
—
4.5
—
—
—
—
—
—
0.4
30
—
—
0.4
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector – Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
Vdc
Vdc
Vdc
Vdc
µAdc
ICBO
µAdc
ICES
MMBT2369A
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
40
—
40
20
30
20
20
—
—
—
—
—
—
—
120
120
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
0.20
0.30
0.25
0.50
0.7
—
—
—
—
—
—
—
0.85
1.02
1.15
1.60
—
—
4.0
5.0
—
—
—
5.0
13
—
8.0
12
—
10
18
Unit
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
hFE
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
Base – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
—
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Small Signal CurrentGain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
pF
hfe
—
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
3. Pulse Test: Pulse Width
2
v 300 ms, Duty Cycle v 2.0%.
ns
ns
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
t1
+10.6 V
0
–1.5 V
3V
< 1 ns
270 Ω
3.3 k
0
–9.15 V
Cs* < 4 pF
Figure 1. ton Circuit — 10 mA
t1
–2 V
10 V
95 Ω
+11.4 V
1k
Cs* < 4 pF
Figure 3. toff Circuit — 10 mA
t1
10 V
0
–8.6 V
0
< 1 ns
3.3 k
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
+10.8 V
270 Ω
t1
+10.75 V
Cs* < 12 pF
1k
< 1 ns
PULSE WIDTH (t1) BETWEEN
10 AND 500 µs
DUTY CYCLE = 2%
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
Figure 2. ton Circuit — 100 mA
95 Ω
Cs* < 12 pF
1N916
Figure 4. toff Circuit — 100 mA
* Total shunt capacitance of test jig and connectors.
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 Ω
RISE TIME = 1 ns
TURN–ON WAVEFORMS
Vin
0
ton
Vout
90%
0.1 µF
220 Ω
10%
Vout
3.3 kΩ
Vin
50 Ω
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 Ω
PW ≥ 300 ns
DUTY CYCLE < 2%
50 Ω
3.3 k
0.0023 µF
0.005 µF
0.0023 µF
0.005 µF
0.1 µF
0.1 µF
VBB +–
TURN–OFF WAVEFORMS
0
10%
Vin
90%
Vout
+V =3V
– CC
toff
VBB = +12 V
Vin = –15 V
Figure 5. Turn–On and Turn–Off Time Test Circuit
6
100
TJ = 25°C
5
LIMIT
TYPICAL
Cib
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
4
3
Cob
2
1
0.1
βF = 10
VCC = 10 V
VOB = 2 V
50
tr (VCC = 3 V)
20
tf
tr
VCC = 10 V
10
5
ts
td
2
0.2
0.5
1.0
2.0
REVERSE BIAS (VOLTS)
5.0
10
Figure 6. Junction Capacitance Variations
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
2
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 7. Typical Switching Times
3
500
200
QT, βF = 40
t1
+5 V
3V
10 pF MAX
∆V
100
0
50
QA, VCC = 3 V
20
VALUES REFER TO
IC = 10 mA TEST
270
< 1 ns
PULSE WIDTH (t1) = 5 µs
DUTY CYCLE = 2%
QA, VCC = 10 V
Cs* < 4 pF
4.3 k
Figure 9. QT Test Circuit
10
2
1
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 8. Maximum Charge Data
C < COPT
C
t1
+6 V
C=0
10 V
980
0
–4 V
COPT
500
< 1 ns
Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
TIME
Figure 10. Turn–Off Waveform
VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS)
CHARGE (pC)
QT, βF = 10
VCC = 10 V
25°C
100°C
Figure 11. Storage Time Equivalent Test Circuit
1.0
TJ = 25°C
0.8
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
IB, BASE CURRENT (mA)
2
5
10
20
Figure 12. Maximum Collector Saturation Voltage Characteristics
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
hFE , MINIMUM DC CURRENT GAIN
200
TJ = 125°C
VCE = 1 V
75°C
25°C
100
TJ = 25°C and 75°C
–15°C
50
–55°C
20
1
2
5
10
IC, COLLECTOR CURRENT (mA)
20
50
100
Figure 13. Minimum Current Gain Characteristics
1.0
βF = 10
TJ = 25°C
1.2
0.5
MAX VBE(sat)
1.0
COEFFICIENT (mV/ °C)
V(sat) , SATURATION VOLTAGE (VOLTS)
1.4
MIN VBE(sat)
0.8
0.6
0
APPROXIMATE DEVIATION
FROM NOMINAL
–0.5
θVC
θVB
–1.0
–55°C to +25°C
±0.15 mV/°C
25°C to 125°C
±0.15 mV/°C
±0.4 mV/°C
±0.3 mV/°C
(25°C to 125°C)
(–55°C to +25°C)
(–55°C to +25°C)
(25°C to 125°C)
–1.5
θVB for VBE(sat)
0.4
0.2
θVC for VCE(sat)
MAX VCE(sat)
1
2
5
10
20
IC, COLLECTOR CURRENT (mA)
–2.0
50
100
Figure 14. Saturation Voltage Limits
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–2.5
0
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT (mA)
80
90
100
Figure 15. Typical Temperature Coefficients
5
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
6
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
V
2
G
C
D
H
K
J
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
7
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8
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
MMBT2369LT1/D
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