EMF18XV6T5 Dual Transistor − Power Management NPN/PNP Dual (Complimentary) http://onsemi.com Features • Low VCE(SAT), t0.5 V • These are Pb−Free Devices (3) MAXIMUM RATINGS Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Value Unit Collector −Emitter Voltage VCEO −60 V Collector −Base Voltage VCBO −50 V Emitter −Base Voltage VEBO −6.0 V IC −100 mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation TA = 25°C PD 357 (Note 1) 2.9 (Note 1) mW Collector Current (1) R1 Q1 Q1 Rating (2) Q2 R2 (4) (5) (6) Q2 Rating Collector Current − Continuous 6 1 SOT−563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Derate above 25°C mW/°C RqJA 350 (Note 1) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation TA = 25°C PD 500 (Note1) 4.0 (Note 1) mW Thermal Resistance, Junction-to-Ambient MARKING DIAGRAM 1 UV M G G Thermal Resistance, Junction-to-Ambient RqJA 250 (Note 1) °C/W UV = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C ORDERING INFORMATION Derate above 25°C mW/°C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. Package Shipping † EMF18XV6T5 SOT−563 (Pb−Free) 8000/Tape & Reel EMF18XV6T5G SOT−563 (Pb−Free) 8000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 1 1 Publication Order Number: EMF18XV6/D EMF18XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) (Note 2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 32.9 47 61.1 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc ICBO − − −0.5 nA Q1: NPN DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Q2: PNP Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 4) (IC = −50 mAdc, IB = −5.0 mAdc) DC Current Gain (Note 4) (VCE = −6.0 Vdc, IC = −1.0 mAdc) IEBO − − −0.5 mA VCE(sat) − − −0.5 Vdc hFE 120 − 560 − fT − 140 − MHz COB − 3.5 − pF Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) 3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 EMF18XV6T5 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 Figure 3. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 4. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 2. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Input Voltage versus Output Current http://onsemi.com 3 10 EMF18XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP 120 VCE , COLLECTOR-EMITTER VOLTAGE (V) 300 mA 250 200 60 150 IB = 50 mA 0 3 6 9 12 10 0.1 15 1 10 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 6. IC − VCE Figure 7. DC Current Gain 2 900 TA = 25°C 800 1.5 1 0.5 700 600 500 400 300 TA = 25°C VCE = 5 V 200 100 0 0.01 0.1 1 10 0 0.2 100 1 5 10 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. On Voltage 13 14 12 12 11 10 9 8 7 6 0.5 IB, BASE CURRENT (mA) C ob, CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TA = − 25°C 100 100 30 0 DC CURRENT GAIN 90 VCE = 10 V TA = 25°C TA = 75°C COLLECTOR VOLTAGE (mV) IC, COLLECTOR CURRENT (mA) 1000 TA = 25°C 100 150 200 10 8 6 4 2 0 1 2 3 0 4 0 VEB (V) 10 20 30 VCB (V) Figure 10. Capacitance Figure 11. Capacitance http://onsemi.com 4 40 EMF18XV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 2 L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A HE DIM A b C D E e L HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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