Filtronic FMA3051 12.5-15.5 ghz mmic high power amplifier Datasheet

FMA3051
Pilot Datasheet v2.1
12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER
FEATURES
•
•
•
•
•
•
FUNCTIONAL SCHEMATIC
35 dB Gain
30 dBm P1dB Output Power at 6 V, 1.2 A
40 dBm OIP3
pHEMT Technology
On-chip output power detector
5 x 3 sq. mm die
D1 D2 D3 D4
RF IN
G2 G3 G4
D1 D2 D3 D4
RF OUT
GENERAL DESCRIPTION
DET
The FMA3051 is a high performance
12.5-15.5 GHz Gallium Arsenide monolithic
amplifier. It is suitable for use in point-tomultipoint communications, sat-com and
electronic warfare applications. The die is
fabricated using the Filtronic 0.25 µm process.
The balanced design offers high output power
with low return losses. Power detection is
achieved with an on-chip coupled detector
associated with diode reference voltage. The
circuit is DC blocked at both the RF input and
the RF output.
G2 G3 G4
TYPICAL APPLICATIONS
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•
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Point-to-point radio
Point-to-multipoint radio
Sat-com
Electronic Warfare
ELECTRICAL SPECIFICATIONS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Small Signal Gain
12.5-15.5 GHz, Vd = 6 V, 1200 mA
32
35
36
dB
Input Return Loss
12.5-15.5 GHz, Vd = 6 V, 1200 mA
-12
-10
dB
Output Return
Loss
12.5-15.5 GHz, Vd = 6 V, 1200 mA
-15
-12
dB
Output Power at
1dB compression
point
12.5-15.5 GHz, Vd = 6 V, 1200 mA
33
35
dBm
Output IP3
12.5-15.5 GHz, Vd = 6 V, 1200 mA
Drain Current
6.0 V
Typical gate
voltage
30
40
dBm
800
1100
1400
mA
-0.5
-0.4
-0.3
V
Note: TAMBIENT = +25°C, Z0 = 50Ω
Performance for on-wafer measurements
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3051
Pilot Datasheet v2.1
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
PAD
REF
PAD
NAME
DESCRIPTION
Max Input
Power
Pin
+20dBm
A
IN
RF in
Drain
Voltage
B
S1B
GND
VDD
+10V
C
D1B
Vd1 bias south
Operating
Temp
-40°C to
+85°C
D
D2B
Vd2 bias south
Toper
E
S2B
GND
Storage
Temp
Tstor
-55°C to
+150°C
F
G2B
Vg2 bias south
G
G3B
Vg3 bias south
H
G4B
Vg4 bias south
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
I
S3B
GND
J
D3B
B
Vd3 bias south
PAD LAYOUT:
K
S4B
GND
L
D4B
B
Vd4 bias south
M
OUT
RF out
N
DET
Detected power voltage
O
Q1
Reference voltage for diode
detector
P
S5
GND
Q
D4B
A
Vd4 bias north
R
S4A
GND
S
D3B
A
Vd3 bias north
T
S3A
GND
U
G4A
Vg4 bias north
V
G3A
Vg3 bias north
W
G2A
Vg2 bias north
X
S2A
GND
Y
D2A
Vd2 bias north
Z
D1A
Vd1 bias north
AA
S1A
GND
AA Z Y X W V U T
A
B C DE
F GH
I
S R
Q
J K
L
P ON
M
DIE SIZE (μm)
DIE THICKNESS (μm)
MIN. BOND PAD PITCH
(μm)
MIN. BOND PAD OPENING
(μm x μm )
5100 x 3000
100
150
92 x 92
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3051
Pilot Datasheet v2.1
TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS:
Note: Measurement Conditions ID = 1100 mA, VDD = 6V, TAMBIENT = 25°C.
Output power at 1dB compression point
Gain
200
Sample size per wafer
S21 (dB)
40
35
30
25
20
15
10
5
0
180
160
12.7 GHz
14 GHz
140
120
15.35 GHz
100
80
60
40
20
0
12
13
14
15
16
28
29
30
Frequency (GHz)
Input return loss
32
33
34
35
Output return loss
0
0
-5
-5
-10
-10
S22 (dB)
S11 (dB)
31
Output P1dB (dBm)
-15
-20
-25
-15
-20
-25
-30
-30
12
13
14
15
16
12
13
Frequency (GHz)
14
15
16
Frequency (GHz)
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3051
Pilot Datasheet v2.1
BIASING CIRCUIT SCHEMATIC:
North and South are biased separately, only one side is represented. Please refer to the
Assembly diagram below for surface mount components locations.
Vdd
D3
Bond
Vdd
D1 D2
Bond
C1
D4
Bond
Bond
C2
C1
Bond
Bond
C2
Vdd
G2 G3 G4
Vg
Bond
C1
C2
Bond
C3
L1
C1
C2
4.5 V
R1
R2
DET PAD N
Detected voltage
Q1 PAD O
Reference voltage
R1
R2
4.5 V
REFERENCE
C1
COMPONENT DESCRIPTION
Capacitor, 100 nF, surface mount 0402
QUANTITY
8
C2
Capacitor, 100 pF, single layer, to epoxy in cavity
8
C3
Capacitor, 10 nF, surface mount 0402
2
L1
Inductor, 10 nH, surface mount 0402
2
Bond
Bondwire
–
R1
Resistor, 1 kΩ, surface mount 0402
2
R2
Resistor, 1.5 kΩ, surface mount 0402
2
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3051
Pilot Datasheet v2.1
ASSEMBLY DIAGRAM
It is recommended that the RF connections be made using bond wires with 25µm diameter and a
maximum length of 300µm.
C2
A
C2
AA
Z
Y X
B
C
D
C2
C2
W
E
F
C2
V
U
G H
C2
T
S
R
Q
I
J
K
L
C2
P
O N
M
C2
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMA3051
Pilot Datasheet v2.1
PREFERRED ASSEMBLY INSTRUCTIONS:
ORDERING INFORMATION:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
PART NUMBER
DESCRIPTION
FMA3051-000
Die in Waffle-pack
(Gel-pak available on
request)
The recommended die attach is gold/tin
eutectic solder under a nitrogen atmosphere.
Stage temperature should be 280-290°C;
maximum time at temperature is one minute.
The recommended wire bond method is
thermo-compression wedge bonding with 0.7
or 1.0 mil (0.018 or 0.025 mm) gold wire.
Stage temperature should be 250-260°C.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
HANDLING
PRECAUTIONS:
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 0 (0-250 V)
as defined in JEDEC Standard No. 22-A114.
Further information on ESD control measures
can be found in MIL-STD-1686 and MILHDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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