FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4 RF IN G2 G3 G4 D1 D2 D3 D4 RF OUT GENERAL DESCRIPTION DET The FMA3051 is a high performance 12.5-15.5 GHz Gallium Arsenide monolithic amplifier. It is suitable for use in point-tomultipoint communications, sat-com and electronic warfare applications. The die is fabricated using the Filtronic 0.25 µm process. The balanced design offers high output power with low return losses. Power detection is achieved with an on-chip coupled detector associated with diode reference voltage. The circuit is DC blocked at both the RF input and the RF output. G2 G3 G4 TYPICAL APPLICATIONS • • • • Point-to-point radio Point-to-multipoint radio Sat-com Electronic Warfare ELECTRICAL SPECIFICATIONS PARAMETER CONDITIONS MIN TYP MAX UNITS Small Signal Gain 12.5-15.5 GHz, Vd = 6 V, 1200 mA 32 35 36 dB Input Return Loss 12.5-15.5 GHz, Vd = 6 V, 1200 mA -12 -10 dB Output Return Loss 12.5-15.5 GHz, Vd = 6 V, 1200 mA -15 -12 dB Output Power at 1dB compression point 12.5-15.5 GHz, Vd = 6 V, 1200 mA 33 35 dBm Output IP3 12.5-15.5 GHz, Vd = 6 V, 1200 mA Drain Current 6.0 V Typical gate voltage 30 40 dBm 800 1100 1400 mA -0.5 -0.4 -0.3 V Note: TAMBIENT = +25°C, Z0 = 50Ω Performance for on-wafer measurements 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PARAMETER SYMBOL ABSOLUTE MAXIMUM PAD REF PAD NAME DESCRIPTION Max Input Power Pin +20dBm A IN RF in Drain Voltage B S1B GND VDD +10V C D1B Vd1 bias south Operating Temp -40°C to +85°C D D2B Vd2 bias south Toper E S2B GND Storage Temp Tstor -55°C to +150°C F G2B Vg2 bias south G G3B Vg3 bias south H G4B Vg4 bias south Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. I S3B GND J D3B B Vd3 bias south PAD LAYOUT: K S4B GND L D4B B Vd4 bias south M OUT RF out N DET Detected power voltage O Q1 Reference voltage for diode detector P S5 GND Q D4B A Vd4 bias north R S4A GND S D3B A Vd3 bias north T S3A GND U G4A Vg4 bias north V G3A Vg3 bias north W G2A Vg2 bias north X S2A GND Y D2A Vd2 bias north Z D1A Vd1 bias north AA S1A GND AA Z Y X W V U T A B C DE F GH I S R Q J K L P ON M DIE SIZE (μm) DIE THICKNESS (μm) MIN. BOND PAD PITCH (μm) MIN. BOND PAD OPENING (μm x μm ) 5100 x 3000 100 150 92 x 92 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS: Note: Measurement Conditions ID = 1100 mA, VDD = 6V, TAMBIENT = 25°C. Output power at 1dB compression point Gain 200 Sample size per wafer S21 (dB) 40 35 30 25 20 15 10 5 0 180 160 12.7 GHz 14 GHz 140 120 15.35 GHz 100 80 60 40 20 0 12 13 14 15 16 28 29 30 Frequency (GHz) Input return loss 32 33 34 35 Output return loss 0 0 -5 -5 -10 -10 S22 (dB) S11 (dB) 31 Output P1dB (dBm) -15 -20 -25 -15 -20 -25 -30 -30 12 13 14 15 16 12 13 Frequency (GHz) 14 15 16 Frequency (GHz) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 BIASING CIRCUIT SCHEMATIC: North and South are biased separately, only one side is represented. Please refer to the Assembly diagram below for surface mount components locations. Vdd D3 Bond Vdd D1 D2 Bond C1 D4 Bond Bond C2 C1 Bond Bond C2 Vdd G2 G3 G4 Vg Bond C1 C2 Bond C3 L1 C1 C2 4.5 V R1 R2 DET PAD N Detected voltage Q1 PAD O Reference voltage R1 R2 4.5 V REFERENCE C1 COMPONENT DESCRIPTION Capacitor, 100 nF, surface mount 0402 QUANTITY 8 C2 Capacitor, 100 pF, single layer, to epoxy in cavity 8 C3 Capacitor, 10 nF, surface mount 0402 2 L1 Inductor, 10 nH, surface mount 0402 2 Bond Bondwire – R1 Resistor, 1 kΩ, surface mount 0402 2 R2 Resistor, 1.5 kΩ, surface mount 0402 2 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 ASSEMBLY DIAGRAM It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of 300µm. C2 A C2 AA Z Y X B C D C2 C2 W E F C2 V U G H C2 T S R Q I J K L C2 P O N M C2 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: ORDERING INFORMATION: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. PART NUMBER DESCRIPTION FMA3051-000 Die in Waffle-pack (Gel-pak available on request) The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com