Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 MMBT3904WG BASE 1 1 2 2 EMITTER SOT-323 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic o Total Device Dissipation FR-5 Board(1) TA=25 C o Derate above 25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C (2) o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit V(BR)CEO 40 - Vdc Collector-Base Breakdowe Voltage ( IC=10 uAdc, IE=0 ) V(BR)CBO 60 - Vdc Emitter-Base Breakdowe Voltage ( IE=10 uAdc, IC=0 ) V(BR)EBO 6.0 - Vdc Base Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) IBL - 50 nAdc Collector Cutoff Current ( VCE=30 Vdc, VEB=3.0 Vdc ) ICEX - 50 nAdc Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC=1.0mAdc, IB=0 ) 2006/11 (3) Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Min. Max. 40 70 100 60 30 300 - VCE(sat) - 0.2 0.3 Vdc VBE(sat) 0.65 - 0.85 0.95 Vdc fT 300 - MHZ Output Capacitance ( VCB=5.0 Vdc, IE=0, f=1.0 MHZ ) Cobo - 4.0 pF Input Capacitance ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ ) Cibo - 8.0 pF Input Impedance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hie 1.0 10 k ohms Voltage Feedback Ratio ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hre 0.5 8.0 X 10 Small-Signal Current Gain ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hfe 100 400 - Output Admittance ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hoe 1.0 40 u mhos Noise Figure ( VCE=5.0 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) NF - 5.0 dB ( VCC=3.0 Vdc, VBE=-0.5 Vdc, IC=10 mAdc, IB1=1.0 mAdc ) td - 35 tr - 35 ( VCC=3.0 Vdc, IC=10 mAdc, IB1=IB2=1.0 mAdc ) ts - 200 tf - 50 Symbol Characteristic ON CHARACTERISTICS Unit (3) DC Current Gain ( IC=0.1 mAdc, VCE=1.0 Vdc ) ( IC=1.0 mAdc, VCE=1.0 Vdc ) ( IC=10 mAdc, VCE=1.0 Vdc ) ( IC=50 mAdc, VCE=1.0 Vdc ) ( IC=100 mAdc, VCE=1.0 Vdc ) Collector-Emitter Saturation Voltage ( IC=10 mAdc, IB=1.0 mAdc ) ( IC=50 mAdc, IB=5.0 mAdc ) HFE - (3) (3) Base-Emitter Saturation Voltage ( IC=10 mAdc, IB=1.0 mAdc ) ( IC=50 mAdc, IB=5.0 mAdc ) SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=10 mAdc, VCE=20 Vdc, f=100 MHZ ) -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300uS, Duty Cycle 2006/11 nS nS 2.0%. Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG +3V +3 V DUTY CYCLE = 2% 300 ns t1 10 < t1< 500us +10.9 V 275 +10.9 V DUTY CYCLE = 2% 275 10 k 10 k 0 ±0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 o TJ=25 C 2000 Q, CHARGE (pC) CAPACITANCE ( pF ) VCC=40 V IC/IB=10 3000 7.0 5.0 Cibo 3.0 Cobo 2.0 o TJ=125 C 1000 700 500 QT 300 200 QA 100 70 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE ( VOLTS ) Figure 3. Capacitance 2006/11 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 4. Charge Data Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG 500 500 300 300 IC/IB=10 200 tr, RISE TIME ( ns ) 200 TIME (ns) 100 70 tr @ VCC=3.0 V 50 30 20 40 V 100 70 50 30 20 15 V 10 10 7 7 2.0 V td @ VOB=0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 30 200 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time IC/IB=20 t'S = tS - 1/8tf IB1/IB2 70 50 IC/IB=20 IC/IB=10 30 20 IC/IB=20 100 70 50 30 10 10 7 7 IC/IB=10 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 7. Storage Time Figure 8. Fall Time 12 14 SOURCE RESISTANCE=200 IC=1.0 mA NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) 200 VCC=40 V IB1=IB2 200 20 5 10 SOURCE RESISTANCE=200 IC=0.5 mA 8 SOURCE RESISTANCE=1.0 K IC=50uA 6 4 SOURCE RESISTANCE=500 IC=100uA 12 IC =1.0 mA f = 1.0 KHZ IC =0.5 mA 10 IC =100 uA IC =50 uA 8 6 4 2 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) Figure 9. 2006/11 50 70 100 300 IC/IB=10 100 2 30 500 tf, FALL TIME ( ns ) t's, STORAGE TIME ( ns ) 200 20 Figure 6. Rise Time 500 300 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 RS, SOURCE RESISTANCE ( k OHMS ) Figure 10. Zowie Technology Corporation Zowie Technology Corporation MMBT3904WG 100 hoe, OUTPUTADMITTANCE (umhos) 300 hfe, CURRENT GAIN 200 100 70 50 50 20 10 5 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 5.0 3.0 10 0.1 0.2 IC, COLLECTOR CURRENT ( mA ) hre, VOLTAGE FEEDBACK RATIO(X 10-4) hie, INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 1.0 2.0 3.0 5.0 10 Figure 12. Output Admittance 20 0.2 0.5 IC, COLLECTOR CURRENT ( mA ) Figure 11. Current Gain 0.1 0.3 5.0 2.0 3.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 10 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 o TJ = +125 C VCE=1.0V o TJ = +25 C 1.0 0.7 o TJ = -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT ( mA ) Figure 15. DC Current Gain 2006/11 Zowie Technology Corporation VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Zowie Technology Corporation MMBT3904WG 1.0 o TJ = 25 C 0.8 10 mA IC = 1.0 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.1 0.07 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT ( mA ) 1.2 1.0 1.0 0.5 COEFFICIENT ( mV / C ) VBE(sat) @ IC/IB=10 0.8 VBE @ ICE=1.0 V 0.6 0.4 VCE(sat) @ IC/IB=10 o VC FOR VCE(sat) 0 o o o o -55 C to +25 C -0.5 -55 C to +25 C -1.0 o o +25 C to +125 C VB FOR VBE(sat) -1.5 0.2 0 -2.0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage 2006/11 o +25 C to +125 C o V, VOLTAGE ( VOLTS ) Figure 16. Collector Saturation Region 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT ( mA ) Figure 18. Temperature Coefficients Zowie Technology Corporation