, LJnc,
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
IRF9240/9241 /9242/924S
IRFP9240/9241 /9242/924S
IRF9640/9641 /9642/9G43
P-CHANNEL
POWER MOSFETS
preliminary Specifications
PRODUCT SUMMARY
- 200 Volt, 0.5 Ohm SFET
Part Number
>D
/fi~
\
°%is
RDSIon)
lo
IRF/IRFP9240, IRF9640 -200V
0.50
-11A
IRF/IRFP9241. IRF9641 -150V
050
-11A
IRF/IRFP9242, IRF9642 -200V
0 70
-9 OA
IRF/IRFP9243, IRF9643 -150V
070
-9.0A
PACKAGE STYLE
FEATURES
Package Type
• LOW RDSlon)
•
•
•
•
»
•
Vos
Improved Inductive ruggedness
Fast switching times
Rugged polysllicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
Part Number
TO3
IRF9240/924 1 /9242/924S
TO-3P
IRFP9240/924 1 /9242/9243
TO220
IRF9640/964 1 /9642/9643
MAXIMUM RATINGS
IRF/IRFP
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ros=1 OMD) (1)
Gale-Source Voltage
Continuous Drain Current Tc = 25°C
Symbol
9240
9640
9241
9641
9242
9642
9243
9643
Unit
VDSS
VDGR
-200
-200
-150
-150
-200
-150
-200
-150
Vdc
vac
±20
VGS
Vdc
ID
-11
-11
-90
-90
Adc
ID
-70
-7.0
-6.0
-6.0
Adc
Drain Current— Pulsed (3)
IDM
-44
-44
-36
-36
Adc
Gate Current— Pulsed
IGM
±1.5
Adc
Total Power Dissipation @ Tc = 25°C
Derate above 25°C
Po
125
1.0
Watts
W/°C
Tj. Tstg
-55 to 150
°C
TL
300
°C
Continuous Drain Current Tc=100°C
Operating and Storage
Junction Temperature Rangy
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case (or 5 seconds
Notes: (1) Tj=25°C to 150'C
(2) Pulse lest: Pulse width<300^s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF9240/9241 /9242/924S
IRFP9240/9241 /9242/924S
IRF9640/9641 /9642/964S
P-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristic
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Symbol Type
BVoss
Mln
Typ
IRF9240/2
IRFP9240/2 -200
IRF9640/2
Test Conditions
Max
Units
—
V
V GS =OV
V
ln=— 250uA
IRF9241/3
[RFP9241/3 -150
IRF9641/3
v • VDS=VGS. b=-250^A
VGS(th)
ALL
-20
-
-4.0
Gate-Source Leakage Forward
less
ALL
-
-
-100
Gate-Source Leakage Reverse
less
ALL
-
~
100
nA VGS=20V
Zero Gate Voltage
Drain Current
loss
ALL
-
-
-250
MA VDs=Max. Rating, VGS=OV
~-
—
On-State Drain-Source
Current (2)
'O(on)
RDS(on)
A
VDS>b(on| X Rosion) max. , VGS~ - 1 0V
~~
A
IRF9240/1
IRFP9240/1
IRF9640/1
0.5
Q
IRF9242/3
IRFP9242/3
IRF9642/3
0.7
0
IRF9643
Static Drain-Source On-State
Resistance (2)
-1000 MA VDS=Max. RatingXO.8, VGS=OV, T C =125°C
IRF9240/1
IRFP9240/1 -1 1
IRF9640/1
IRF9642
nA V GS =-20V
-9.0
V GS =-10V, I D =-6.0A
Forward Transconductance (2)
Qfs
ALL
4.0
-
-
0
Input Capacitance
Ciss
ALL
-
-
1300
PF
Output Capacitance
-
-
450
pF
PF
Vos>b(on) X RoS(on) max , ID — — 6 . OA
VGS=OV, V D s=-25V, f= 1.0MHz
Coss
ALL
Reverse Transfer Capacitance
Crss
ALL
-
-
250
Turn-On Delay Time
td(on)
ALL
—
—
30
ns
tr
ALL
_
15
ns
td|oll|
ALL
—
—
18
t|
ALL
-
—
12
Total Gate Charge
(Gate-Source Plus Gate-Drain)
QQ
ALL
—
—
90
Gate-Source Charge
Q9S
ALL
-
-
30
Q0d
ALL
—
—
60
-
-
1.0
K/W
-
1.0
-
K/W Mounting surface flat, smooth, and greased
—
-
80
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Drain ("Miller") Charge
VDD = 0.5BVDss, b = -6.0A, Zo=4.7fJ,
(MOSFET switching times are essentially
ns independent of operating temperature.)
ns
nC V GS =-15V, I D =-22A, VDs=0.8 Max.
Rating (Gate charge is essentially independent
nC
of operating temperature )
nC
THERMAL RESISTANCE
Junction-to-Case
Case-to-Sink
RlhJC
ALL
Rmcs
ALL
IRFPXXXX
Junction-to- Ambient
IRF96XX
RthJA
IRF92XX
30
Free Air Operation
K/W
:
Notes: (1) Tj=25°C to 150°C
(2) Pulse test: Pulse width«300Ms, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
IRF9240/9241 /9242/S243
IRFP9240/9241 /9242/924S
IRF9640/9641 /9G42/9643
P-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Symbol
Continuous Source Current
(Body Diode)
Ic
Min Typ Max Units
Type
IRF9240/1
IRFP9240/1
IRF9640/1
-
-
-11
A
IRF9242/3
IRFP9242/3
IRF9642/3
—
—
-9.0
A
-44
A
IRF9240/1
IRFP9240/1
IRF9640/1
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
VSD
Test Conditions
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier
-rt^ff
G-XJy'
^^^s
IRF9242/3
IRFP9242/3
IRF9642/3
-
-
-36
A
IRF9240/I
IRFP9240/1
IRF9640/1
—
—
-4.6
V
TC = 25°C, I S =-11A. VGS=OV
-4.4
V
TC = 25°C, ls=-9.0A, VGs=OV
IRF9242/3
IRFP9242/3
IRF9642/3
Reverse Recovery Time
ALL
ns Tj = 1 50°C, IF= - 1 1 A,dlF/dt= 1 0OA/^s
trr
Notes: (1) Tj=25°C to 150°C (2) Pulse test: Pulse width«300/js, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
ooc
(
J>
to
5
O
o
\
o
<?
\
o
\
o
M
PD, POWER DISSIPATION (WATTS)
s\
* 35
i,,.
\
20
40
60
80
100 120
140
Tc, CASE TEMPERATURE (°C)
Power Vs. Temperature Derating Curve
Tj, JUNCTION TEMPERATURE (*C)
Breakdown Voltage Vs. Temperature
3
0
4 0
80
120
Tj, JUNCTION TEMPERATURE CO
Normalized On-Reslslance Vs. Temperature
I
_L
-15
-30
-45
-60
lo. DRAIN CURRENT (AMPERES)
Typical On-Reslstance Vs. Drain Current
40
160
80
9
w
•o
'5
T> •
en «.
b o>
J
Ol
J
~ A
37.66
38.68
t
p r
HM
K> to
o o>
Ol
c
••
3