UTC B772SSG-X-AE3-R Medium power low voltage transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
B772SS
PNP SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
„
DESCRIPTION
The UTC B772SS is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
„
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to D882SS
Lead-free:
B772SSL
Halogen-free: B772SSG
„
ORDERING INFORMATION
Normal
B772SS-x-AE3-R
„
Order Number
Lead Free
B772SSL-x-AE3-R
Halogen Free
B772SSG-x-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
B72
L: Lead Free
G: Halogen Free
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Copyright © 2009 Unisonic Technologies Co., Ltd
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B772SS
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
-40
V
-30
V
-5
V
Pulse
-7
A
Collector Current
DC
-3
A
Base Current
-0.6
A
TC=25°C
10
W
Collector Dissipation
PD
Ta=25°C
350
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE1
DC Current Gain(Note)
hFE2
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note: Pulse test: PW<300µs, Duty Cycle<2%
„
SYMBOL
VCBO
VCEO
VEBO
ICP
IC
IB
TEST CONDITIONS
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-30V ,IE=0
VCE=-30V ,IB=0
VEB=-3V, IC=0
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.1A
VCB=-10V, IE=0,f=1MHz
MIN
-40
-30
-5
30
100
TYP MAX UNIT
V
V
V
-1000 nA
-1000 nA
-1000 nA
200
150 400
-0.3 -0.5
V
-1.0 -2.0
V
80
MHz
45
pF
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100 ~ 200
UNISONIC TECHNOLOGIES CO., LTD
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P
160 ~ 320
E
200 ~ 400
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS
Derating Curve of Safe Operating Areas
Static Characteristics
150
1.6
-IB=9mA
-IB=8mA
-IB=7mA
1.2
100
-IB=6mA
S/
b
-IB=5mA
ss
Di
0.8
at
50
n
io
i te
lim
-IB=3mA
0.4
ip
-IB=4mA
lim
ite
d
d
-IB=2mA
-IB=1mA
0
0
0
4
8
12
16
-Collector-Emitter Voltage, BVCEO (V)
20
-50
Power Derating
0
50
100
150
Case Temperature, Tc (°C)
200
Collector Output Capacitance
3
10
12
IE=0
f=1MHz
2
10
8
1
10
4
0
10
0
-50
0
50
100
150
200
10
10
-1
10
-2
10
-3
-Collector-Base Voltage, BVCBO(V)
Case Temperature, Tc (°C)
Current Gain-Bandwidth Product
Safe Operating Area
10
S
S
2
1m
1m
VCE=5V
Ic(max),Pulse
10
mS
Ic(max),DC
0.
1
10
3
10
10
0
0
IB=8mA
IB=8mA
10
10
1
-1
10
0
10
-2
-1
10
10
0
10
1
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
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10
-2
10
0
10
1
2
10
Collector-Emitter Voltage, BVCEO(V)
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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