Fairchild FDMC7660 N-channel powertrenchâ® mosfet 30 v, 20 a, 2.2 mî© Datasheet

FDMC7660
N-Channel PowerTrench® MOSFET
30 V, 20 A, 2.2 mΩ
Features
General Description
„ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
„ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
Applications
„ DC - DC Buck Converters
„ Point of Load
„ High Efficiency Load Switch and Low Side Switching
Bottom
Top
S
D
D
D
Pin 1
S
S
G
D
S
D
S
D
S
D
G
D
Power 33
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
40
100
(Note 1a)
20
(Note 3)
200
-Pulsed
A
200
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
41
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to + 150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
3
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7660
Device
FDMC7660
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
Package
Power 33
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC7660 N-Channel PowerTrench® MOSFET
June 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
100
nA
2.5
V
30
V
14
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.2
1.7
-6
mV/°C
VGS = 10 V, ID = 20 A
1.8
2.2
VGS = 4.5 V, ID = 18 A
2.6
3.3
VGS = 10 V, ID = 20 A, TJ = 125°C
2.2
3.1
VDS = 5 V, ID = 20 A
163
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
3630
4830
pF
1345
1790
pF
110
165
pF
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VDD = 15 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
14
25
6.8
14
ns
ns
36
58
ns
tf
Fall Time
5.7
11
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
54
86
nC
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 20 A
24
38
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
nC
11
nC
5.6
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 20 A
(Note 2)
0.8
1.2
VGS = 0 V, IS = 1.9 A
(Note 2)
0.7
1.2
IF = 20 A, di/dt = 100 A/μs
V
45
63
ns
25
35
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 20 A, VDD = 27 V, VGS = 10 V
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
2
www.fairchildsemi.com
FDMC7660 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
3.0
200
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
150
VGS = 4.5 V
VGS = 4 V
100
VGS = 3.5 V
50
VGS = 3 V
0
0.0
0.5
1.0
1.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 3 V
VGS = 3.5 V
2.0
VGS = 4 V
1.5
1.0
2.0
0
50
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
200
15
ID = 20 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
150
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 20 A
5
TJ = 125oC
TJ = 25 oC
0
100 125 150
2
4
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
VDS = 5 V
TJ = 150 oC
100
TJ = 25 oC
50
TJ = -55 oC
4
10
VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
200
100
0.1
0.2
0
3
8
Figure 4. On-Resistance vs Gate to
Source Voltage
200
2
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
TJ, JUNCTION TEMPERATURE (oC)
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 4.5 V
0.5
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC7660 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 20 A
Ciss
8
CAPACITANCE (nF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
Coss
1
Crss
f = 1 MHz
VGS = 0 V
2
0.1
0
0
20
40
0.05
0.1
60
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
150
30
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
o
RθJC = 3 C/W
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
VGS = 10 V
100
VGS = 4.5 V
50
Limited by Package
1
0.01
0.1
1
10
0
25
100 300
50
150
1000
P(PK), PEAK TRANSIENT POWER (W)
DERIVED FROM
TESTED DATA
100
ID, DRAIN CURRENT (A)
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
300
10
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
THIS AREA IS
LIMITED BY rDS(on)
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
RθJA = 125 oC/W
1s
10 s
TA = 25 oC
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
TA = 25 oC
100
10
1
0.5 -3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
SINGLE PULSE
RθJA = 125 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC7660 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
1E-3
-3
10
-2
10
-1
0
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
5
www.fairchildsemi.com
FDMC7660 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC7660 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMC7660 Rev.C5
7
www.fairchildsemi.com
FDMC7660 N-Channel PowerTrench® MOSFET
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