UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage VCEO(SUS) =-25V (Min) @ IC =-10mA *High DC Current Gain hFE =70 (Min) @ IC=-500mA =45 (Min) @ IC=-2A =10 (Min) @ IC=-5A *Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) *Straight Lead Version in Plastic Sleeves (“-1” Suffix) *Lead Formed Version in 16mm Tape and Reel (“T4” Suffix) *Low Collector – Emitter Saturation Voltage VCE(SAT) = -0.3V (Max) @ IC =-500mA = -0.75V (Max) @ IC = -2.0 A *High Current-Gain-Bandwidth Product fT = 65 MHz (Min) @ IC = -100 mA *Annular Construction for Low Leakage ICBO = -100 nA @ Rated VCB TO-251 ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free MJD210L-TM3-T MJD210G-TM3-T MJD210L-TN3-T MJD210G-TN3-T MJD210L-TN3-R MJD210G-TN3-R www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tape Reel 1 of 5 QW-R213-001.C MJD210 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -7 V I A Continuous -5 C Collector Current Peak -10 A Base Current IB -1 A TC=25°C 12.5 W Derate above 25°C 0.1 W/°C Total Device Dissipation PD Ta=25°C (Note2) 1.4 W Derate above 25°C 0.011 W/°C Junction Temperature TJ +150 °C -65 ~ +150 Storage Junction Temperature TSTG °C Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When surface mounted on minimum pad sizes recommended. THERMAL DATA (Ta=25°C, unless otherwise specified) PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATING 89.3 10 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0 VCB=-40V, IE=0 Collector Cutoff Current ICBO VCB=-40V, IE=0, TJ=125°C Emitter Cutoff Current IEBO VBE=-7V, IC=0 ON CHARACTERISTICS IC=-500mA, VCE=-1V DC Current Gain (Note 1) hFE IC=-2A, VCE=-1V IC=-5A, VCE=-2V IC=-500mA, IB=-50mA Collector-Emitter Saturation Voltage (Note 1) VCE(SAT) IC=-2A, IB=-200mA IC=-5A, IB=-1A Base-Emitter Saturation Voltage (Note 1) VBE(SAT) IC=-5A, IB=-1A Base-Emitter On Voltage (Note 1) VBE(ON) IC=-2A, VCE=-1V DYNAMIC CHARACTERISTICS IC=-100mA, VCE=-10V, Current-Gain-Bandwidth Product (Note 2) fT fTEST = 10MHz Output Capacitance COB VCB=-10V, IE=0, f=0.1MHz Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≈ 2%. 2. fT =｜hFE｜‧fTEST. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN MAX UNIT -100 -100 -100 V nA nA nA -25 70 45 10 180 -0.3 -0.75 -1.8 -2.5 -1.6 65 V V V MHz 120 pF 2 of 5 QW-R213-001.C MJD210 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Power Derating T A TC 2.5 25 Switching Time Test Circuit Power Dissipation ,PD (W) VDS=10V ID=6V 2 VCC 25 µs 20 1 TA 10 (Surface Mount ) 51 tr，tf≤10ns Duty Cycle=1% TC 0 5 0 25 50 75 100 RB and RC Varied to Obtain Desired Current Levels D1 Must be Fast Recovery Type, e.g.: 1N5825 Used Above IB ≈ 100mA for PNP Test Circuit MSD6100 Used Below IB≈100mA Reverse All Polaritries 150 125 Turn-Off Time Turn-On Time 1000 300 200 D1 -4V Temperature,T(℃) 500 SCOPE RB -9V 0.5 10K tD 5K 3K tF 2K 100 Time, t(ns) Time, t(ns) RC +11V 1.5 15 +30V 50 30 500 300 200 10 100 50 30 20 (VCC=30V,IC/IB=10,IB1=IB2,TJ=25℃) 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 Collector Current, IC (A) 10 Voltage,V(V) DC Current Gain,hFE 10 tF 1K 20 5 3 (VCC=30V,IC/IB=10,TJ=25℃) 2 1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 Collector Current,IC (A) tS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R213-001.C MJD210 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS (Cont.) Capacitance Temperature Current (A) 200 *Applies For IC/IB≤hEF/3 +2 Cib TJ=25℃ +1.5 25℃ to 150℃ +1 +0.5 0 Capacitance ,C (pF) Temperature Coefficients ,θV (mV/℃) +2.5 *θVC for VCE(SAT) -55℃ to 25℃ 25℃ to 150℃ -0.5 -55℃ to 25℃ -1 -1.5 θVB for VBE 100 70 50 Cob 30 -2 -2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 20 5 0.4 0.5 1 2 4 6 10 20 40 Reverse Voltage, VR (V) Transient Thermal Resistence (Normalized) ,r(t) Collector Current, IC(A) Active Region Safe Operating Area 10 5 1ms 3 2 1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 9 is based on TJ(pk)=150℃; Tc is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)150℃. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100µ 500µ TJ=150℃ DC 5ms __ _ __ _Bonding Wire Limited __ __ __ Thermally Limited @TC=25℃ (Singel Pulse) 0.1 _______ Second Breakdown Limited Curves Aplly Below Rated VCEO 0.01 2 3 5 7 10 1 0.3 Collector-Emitter Voltage, VCE (V) 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 30 4 of 5 QW-R213-001.C MJD210 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R213-001.C