ACE1621B P-Channel Enhancement Mode Field Effect Transistor Description ACE1621B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features VDS(V) =-30V ID=-60A RDS(ON)@VGS=-20V, IDS=-20A, Typ 7.5mΩ RDS(ON)@VGS=-10V, IDS=-20A, Typ 8.5mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current * AC TA=25℃ TA=70℃ Pulsed Drain Current * B Power Dissipation ID IDM TA=25℃ TA=70℃ PD -60 -45 -130 100 50 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 A A W O C Packaging Type TO-252 VER 1.2 1 ACE1621B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE1621B XX + H Halogen - free Pb - free YM : TO-252 Electrical CharacteristicsTA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance V(BR)DSS VGS=0V, ID=-250 uA -30 VGS(th) VDS=VGS, IDS=-250uA -1.5 IGSS VDS=0V,VGS=±25V ±100 nA IDSS VDS=-24V, VGS=0V -1 uA RDS(ON) V -1.8 -3.5 VGS=-20V, ID=-20A 7.5 9 VGS=-10V, ID=-20A 8.5 12 VGS=-4.5V, ID=-10A 14 25 Forward Transconductance gfs VDS=-5V,ID=-20A 30 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=-1A, VGS=0V -0.72 IS mΩ S -1.0 V -55 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time td(on) Turn-Off Time td(off) 40 VDS=-15V, VGS=-10V, ID=-20A 47.2 55 10 nC 20.4 VGS=-10V, RGEN=3Ω, VDS=-15V, RL=0.75Ω 12.4 nS 25.6 Dynamic Input Capacitance Ciss Output Capacitance REVERSE Transfer Capacitance Coss 3076 VGS=0V, VDS=-15V, f=1MHz Crss 3500 603 402 pF 523 2 Note: 1. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤10s junction to ambient thermal resistance rating. VER 1.2 2 ACE1621B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE1621B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE1621B P-Channel Enhancement Mode Field Effect Transistor Packing Information TO-252 Units: mm VER 1.2 5 ACE1621B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6