PD- 96348
AUTOMOTIVE GRADE
AUIRLR024N
AUIRLU024N
Features
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HEXFET® Power MOSFET
Advanced Planar Technology
Low On-Resistance
Logic-Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
V(BR)DSS
55V
RDS(on) max.
G
0.065Ω
ID
S
17A
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
G
D
S
G
D
S
I-Pak
AUIRLU024N
D-Pak
AUIRLR024N
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
c
d
c
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
17
12
72
45
0.3
± 16
68
11
4.5
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
-55 to + 175
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.3
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
01/18/11
AUIRLR/U024N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
55
–––
–––
V
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.061
–––
–––
–––
0.065
–––
–––
0.080
–––
–––
0.110
1.0
–––
2.0
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
8.3
–––
Drain-to-Source Leakage Current
–––
–––
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
f
f
= 9.0A f
VGS = 10V, ID = 10A
Ω
VGS = 5.0V, ID = 10A
VGS = 4.0V, ID
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 11A
25
µA
VDS = 55V, VGS = 0V
nA
VGS = 16V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
–––
15
Qgs
Gate-to-Source Charge
–––
–––
3.7
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
8.5
VGS = 5.0V,See Fig 6 and 13
td(on)
Turn-On Delay Time
–––
7.1
–––
VDD = 28V
tr
Rise Time
–––
74
–––
td(off)
Turn-Off Delay Time
–––
20
–––
tf
Fall Time
–––
29
–––
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Crss
–––
4.5
–––
–––
7.5
–––
–––
480
–––
Output Capacitance
–––
130
–––
Reverse Transfer Capacitance
–––
61
–––
Min.
Typ.
Max.
ID = 11A
nC
VDS = 44V
fh
ID = 11A
ns
RG = 12 Ω, VGS = 5.0V
RD = 2.4Ω, See Fig.10
Between lead,
nH
fh
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz, See Fig.5
S
h
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Units
–––
–––
17
–––
72
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
60
90
ns
Qrr
Reverse Recovery Charge
–––
130
200
nC
ton
Forward Turn-On Time
c
Conditions
MOSFET symbol
A
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A
di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 790µH, RG = 25Ω, IAS = 11A. (See Figure 12)
ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .
Uses IRLZ24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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AUIRLR/U024N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
RoHS Compliant
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
D PAK
MSL1
I-PAK
N/A
Machine Model
Class M2(+/-150V )
AEC-Q101-002
Human Body Model
Class H1A(+/-500V )
AEC-Q101-001
Charged Device
Model
Class C5(+/-2000V )
AEC-Q101-005
†††
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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3
AUIRLR/U024N
100
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
2.5V
20µs PULSE WIDTH
T J = 25°C
0.1
0.1
1
10
A
10
2.5V
1
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
1
V DS = 15V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
A
100
Fig 2. Typical Output Characteristics
100
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
T J = 175°C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
A
I D = 17
18AA
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRLR/U024N
Ciss
600
400
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
800
Coss
200
Crss
0
1
10
100
A
I D = 11A
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
VDS , Drain-to-Source Voltage (V)
12
16
20
A
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
8
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
2.0
100
10µs
100µs
10
TC = 25°C
TJ = 175°C
Single Pulse
1
1
1ms
10ms
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRLR/U024N
20
RD
ID , Drain Current (A)
V DS
15
VGS
D.U.T.
RG
10
+
-VDD
5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
5
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
175
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
0.01
0.00001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
A
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E AS , Single Pulse Avalanche Energy (mJ)
AUIRLR/U024N
140
TOP
120
BOTTOM
ID
4.5A
7.8A
11A
100
80
60
40
20
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
12V
.2µF
.3µF
QG
10 V
D.U.T.
QGS
QGD
VG
+
V
- DS
VGS
3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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AUIRLR/U024N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
+
-
-
•
•
•
•
RG
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® MOSFETs
8
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AUIRLR/U024N
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AURLR024N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRLR/U024N
I-Pak (TO-251AA) Package Outline
( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AURLU024N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR/U024N
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRLR/U024N
Ordering Information
Base part
Package Type
AUIRLR024N
DPak
AUIRLU024N
IPak
12
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRLR024N
AUIRLR024NTR
AUIRLR024NTRL
AUIRLR024NTRR
AUIRLU024N
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AUIRLR/U024N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and
services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix
follow automotive industry and / or customer specific requirements with regards to product discontinuance and process
change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications, customers
should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the
IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products
for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of
the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has
not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all
legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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