AP2306CGTN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Lower On-resistance
BVDSS
20V
RDS(ON)
30mΩ
ID
▼ Surface Mount Package
5.5A
S
▼ RoHS Compliant & Halogen-Free
TSOT-23 G
D
Description
AP2306C series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The special design TSOT-23 package with ultra low profile ( < 1mm) is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or switch
applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+12
V
3
5.5
A
3
4.4
A
20
A
1.38
W
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201203161
AP2306CGTN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=5A
-
-
30
mΩ
VGS=2.5V, ID=2.5A
-
-
45
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=5A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.4
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
6
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=20V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2306CGTN-HF
20
20
o
o
12
8
4
12
8
4
0
0
0
1
2
3
4
5
6
7
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
32
I D =5A
I D =5A
30
V G =4.5V
1.6
o
T A =25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
5.0V
4.5V
3.5V
2.5V
V G =2.0V
16
ID , Drain Current (A)
16
ID , Drain Current (A)
T A =150 C
5.0V
4.5V
3.5V
2.5V
V G =2.0V
T A =25 C
28
26
1.4
1.2
24
1.0
22
0.8
0.6
20
0
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.6
1.4
o
o
T j =150 C
IS (A)
Normalized VGS(th)
6
T j =25 C
4
1.2
1
0.8
0.6
2
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2306CGTN-HF
f=1.0MHz
1000
I D =5A
800
6
V DS =10V
V DS =12V
V DS =16V
4
600
C iss
C (pF)
VGS , Gate to Source Voltage (V)
8
400
2
200
C oss
C rss
0
0
0
2
4
6
8
10
12
14
16
18
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Normalized Thermal Response (Rthja)
DUTY=0.5
Operation in this area
limited by RDS(ON)
ID (A)
100us
1
1ms
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
Rthja = 270℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
ID , Drain Current (A)
VG
6
QG
4.5V
4
QGS
QGD
2
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4