PD - 96365B
AUIRF7316Q
HEXFET® Power MOSFET
Features
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Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free, RoHS Compliant
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
V(BR)DSS
-30V
RDS(on) typ.
0.042Ω
max. 0.058Ω
ID
Top View
-4.9A
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Units
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
V
V
mJ
A
mJ
V/ns
-55 to + 150
°C
Max.
Units
62.5
°C/W
c
g
g
Continuous Source Current (Diode Conduction)
Power Dissipation
Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
g
g
e
A
W
Thermal Resistance
RθJA
Junction-to-Ambient
g
Parameter
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
08/24/11
AUIRF7316Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Conditions
-30
––– –––
V VGS = 0V, ID = -250μA
––– 0.022 ––– V/°C Reference to 25°C, ID = -1mA
VGS = -10V, ID = -4.9A
––– 0.042 0.058
Ω
VGS = -4.5V, ID = -3.6A
––– 0.076 0.098
-1.0 ––– -3.0
V VDS = VGS, ID = -250μA
–––
7.7
–––
S VDS = -15V, ID = -4.9A
VDS = -24V, VGS = 0V
––– ––– -1.0
μA
VDS = -24V, VGS = 0V, TJ = 55°C
––– –––
-25
VGS = -20V
––– ––– 100
nA
––– ––– -100
VGS = 20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
23
3.8
5.9
13
13
34
32
710
380
180
34
5.7
8.9
19
20
51
48
–––
–––
–––
nC
ns
pF
Conditions
ID = -4.9A
VDS = -15V
VGS = -10V, See Fig.10
VDD = -15V
ID = -1.0A
RG = 6.0Ω
RD = 15Ω
VGS = 0V
VDS = -25V
ƒ = 1.0MHz,See Fig.5
f
f
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
VSD
trr
Qrr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Min. Typ. Max. Units
–––
–––
-2.5
A
–––
–––
-30
–––
–––
–––
-0.78
44
42
-1.0
66
63
Conditions
MOSFET symbol
V
ns
nC
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C,IF = -1.7A
di/dt = 100A/μs
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 35mH, RG = 25Ω, IAS = -2.8A.
ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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2
AUIRF7316Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
SO-8
MSL1
†††
Class M2(+/- 200V )
(per AEC-Q101-002)
Human Body Model
Class H1A(+/- 500V )
(per AEC-Q101-001)
Charged Device
Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
RoHS Compliant
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRF7316Q
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
TOP
10
-3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20μs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
A
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
A
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS (on) , Drain-to-Source On Resistance (Ω)
AUIRF7316Q
ID =-4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS =-10V
0
20
40
60
0.6
0.5
0.4
0.3
V GS = -4.5V
0.2
0.1
VGS = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
300
0.16
0.12
0.08
I D = -4.9A
0.04
0.00
0
3
6
9
12
-VGS , Gate -to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
30
A
Fig 6. Typical On-Resistance Vs. Drain
Current
15
A
EAS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
20
-I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
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ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
5
AUIRF7316Q
VGS = 0V
C, Capacitance (pF)
1200
20
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
800
Coss
600
400
Crss
200
0
1
ID = -4.9A
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
10
100
VDS =-15V
16
12
8
4
0
A
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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6
AUIRF7316Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
A1
MILLIMETERS
MAX
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
AUIRF7316Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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AUIRF7316Q
Ordering Information
Base part
Package Type
AUIRF7316Q
SO-8
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Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7316Q
AUIRF7316QTR
9
AUIRF7316Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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