NZF220TT1 EMI Filter with ESD Protection Features: • • • • • • • EMI/RFI Bi−directional “Pi” Low−Pass Filters ESD Protection Meets IEC61000−4−2 Diode Capacitance: 7 − 10 pF Zener/Resistor Line Capacitance: 22 ± 20% pF Low Zener Diode Leakage: 1 mA Maximum Zener Breakdown Voltage; 6 − 8 Volts Pb−Free Package is Available http://onsemi.com CIRCUIT DESCRIPTION 1 2 Benefits: 3 • Designed to Suppress EMI/RFI Noise in Systems Subjected to Electromagnetic Interference • Small Package Size Minimizes Parasitic Inductance, Thus a More “Ideal” Low Pass Filtering Response 1 Applications: • • • • MARKING DIAGRAM 3 X6 M G G SC−75 CASE 463 STYLE 4 Cellular Phones Communication Systems Computers Portable Products with Input/Output Conductors X6 M G MAXIMUM RATINGS Rating 2 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Symbol Value Unit Peak Power Dissipation (Note 1) 8 × 20 ms Pulse PPK 14 W Maximum Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. All diodes under power *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NZF220TT1 NZF220TT1G Package Shipping† SC−75 3000/Tape & Reel SC−75 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NZF220TT1/D NZF220TT1 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit VZ 6.0 − 8.0 V Ir N/A − 1.0 mA Zener Forward Voltage, @ IF = 50 mA VF N/A − 1.25 V Zener Internal Capacitance, @ 0 V Bias C 7.0 − 10 pF Zener/Resistor Array Line Capacitance C 17.6 − 26.4 pF R 90 − 110 W FC (Note 2) − 220 − MHz Zener Breakdown Voltage, @ IZT = 1 mA Zener Leakage Current, @ VR = 3 V Resistance Cutoff Frequency 2. 50 W Source and 50 W Lead Termination per Figure 2 Applications Information Suppressing Noise at the Source • Filter all I/O signals leaving the noisy environment • Locate I/O driver circuits close to the connector • Use the longest rise/fall times possible for all digital signals Reducing Noise at the Receiver • Filter all I/O signals entering the unit • Locate the I/O filters as close as possible to the connector Minimizing Noise Coupling • • • • • Use multilayer PCBs to minimize power and ground inductance Keep clock circuits away from the I/O connector Ground planes should be used whenever possible Minimize the loop area for all high speed signals Provide for adequate power decoupling ESD Protection • Locate the suppression devices as close to the I/O connector as possible • Minimize the PCB trace length to the suppression device • Minimize the PCB trace length for the ground return for the suppression device http://onsemi.com 2 NZF220TT1 Frequency Response Specification TRACKING GENERATOR TG OUTPUT SPECTRUM ANALYZER 50 W RF INPUT NZF220T 50 W VG Vin Vout TEST BOARD Test Conditions: Source Impedance = 50 W Load Impedance = 50 W Input Power = 0 dB NZF220T Figure 1. Measurement Conditions −6.3 GAIN (dB) Y Y OUTPUT 3 dB = 220 MHz −50 1.0 10 100 1000 f, FREQUENCY (MHz) Figure 2. Typical EMI Filter Response (50 W Source and 50 W Lead Termination) http://onsemi.com 3 3000 NZF220TT1 OUTLINE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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