SeCoS BCP8050-C 1.5a, 40v npn epitaxial planar transistor Datasheet

BCP8050
1.5A, 40V
NPN Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
DESCRIPTION
SOT-89
The BCP8050 is suited for the output stage of audio,
voltage regulator, and relay driver.
4
MARKING
1 2
3
A
Y1
E
CLASSIFICATION OF hFE
Product Rank
B
BCP8050-C
BCP8050-D
120~200
160~300
D
F
Range
C
G
H
K
J
L
Collector
PACKAGE INFORMATION
24
Package
MPQ
Leader Size
SOT-89
1K
7ā€™ inch
REF.
A
B
C
D
E
F
1
Base
3
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
REF.
G
H
J
K
L
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction & Storage temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
40
25
5
1.5
0.5
150, -55~150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
40
25
5
-120
40
-
100
15
0.1
0.1
0.1
300
0.5
1.2
1
1.55
-
V
V
V
µA
µA
µA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
Output Capacitance
http://www.SeCoSGmbH.com/
23-Sep-2014 Rev. B
hFE
VCE(sat)
VBE(sat)
VBE
VBEF
fT
COB
V
V
V
V
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=0.1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC= 0.1A
VCE=1V, IC= 0.8A
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
IB=1A
VCE=10V, IC=50mA, f=30MHz
VCB=10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2
BCP8050
Elektronische Bauelemente
1.5A, 40V
NPN Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
23-Sep-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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