Sanyo ENA1905A General-purpose switching device application Datasheet

CPH3355
Ordering number : ENA1905A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
CPH3355
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance RDS(on)1=120mΩ(typ.)
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--30
V
±20
V
Allowable Power Dissipation
ID
IDP
PD
1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
--2.5
A
--10
A
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
Product & Package Information
unit : mm (typ)
7015A-004
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
CPH3355-TL-H
0.6
2.9
0.15
Packing Type: TL
LOT No.
WM
0.2
0.05
1.6
2.8
Marking
3
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
SANYO : CPH3
1
2
http://semicon.sanyo.com/en/network
60612 TKIM/D2210PE TKIM TC-00002536 No. A1905-1/7
CPH3355
Electrical Characteristic at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
Ratings
min
typ
Unit
max
--30
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1A
1.9
RDS(on)1
ID=--1A, VGS=--10V
120
156
mΩ
RDS(on)2
ID=--0.5A, VGS=--4.5V
187
262
mΩ
RDS(on)3
ID=--0.5A, VGS=--4V
213
299
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
172
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
51
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
36
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
4.5
ns
Rise Time
tr
See specified Test Circuit.
4.2
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
20
ns
Fall Time
tf
See specified Test Circuit.
10.6
ns
Total Gate Charge
Qg
nC
Qgs
VDS=--15V, VGS=--10V, ID=--2.5A
VDS=--15V, VGS=--10V, ID=--2.5A
3.9
Gate-to-Source Charge
0.6
nC
VDS=--15V, VGS=--10V, ID=--2.5A
IS=--2.5A, VGS=0V
--0.86
Static Drain-to-Source On-State Resistance
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
--1.2
--1
μA
±10
μA
--2.6
V
S
0.8
nC
--1.5
V
Switching Time Test Circuit
VIN
VDD= --15V
0V
--10V
ID= --1A
RL=15Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
CPH3355
P.G
50Ω
S
Ordering Information
Device
CPH3355-TL-H
Package
Shipping
memo
CPH3
3,000pcs./reel
Pb Free and Halogen Free
No. A1905-2/7
CPH3355
ID -- VDS
--8.0
V
VDS= --10V
--1.8
--1.6
--1.0
--0.8
--0.6
Ta=
75
--0.4
--0.4
--0.2
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Drain-to-Source Voltage, VDS -- V
--1.0A
400
300
200
100
--2
--4
--6
--8
--10
--12
--14
--16
Gate-to-Source Voltage, VGS -- V
2
°C
-25
=Ta
1.0
C
75°
7
°C
5
25
3
--4.0
--4.5
IT16078
.5A
= --0
I
D
,
V
.0
= --4
VGS
--0.5A
, I D=
V
5
.
4
= -VGS
= --1.0A
10.0V, I D
V GS= --
200
100
--20
0
20
40
60
80
100
120
140
160
IT16219
IS -- VSD
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
0
5 7 --10
IT16081
Drain Current, ID -- A
3
td(off)
2
tf
10
7
td(on)
5
tr
--0.6
--0.8
--1.0
--1.2
IT16082
f=1MHz
7
5
Ciss, Coss, Crss -- pF
5
--0.4
Ciss, Coss, Crss -- VDS
1000
VDD= --15V
VGS= --10V
7
--0.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
100
3
Ciss
2
100
7
Coss
5
3
3
2
2
1.0
--0.1
--3.5
3
2
2
0.1
--0.01
300
--10
7
5
5
3
--3.0
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
--18
VDS= --10V
7
--2.5
400
IT16218
| yfs | -- ID
10
--2.0
RDS(on) -- Ta
0
--60 --40
0
0
--1.5
500
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --0.5A
--1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
500
--0.5
IT16039
RDS(on) -- VGS
600
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
--1.0
Ta=7
5°C
25°C
--25
°C
0
Switching Time, SW Time -- ns
--25°C
--0.8
--1.2
°C
--3.0
V GS=
°C
V
--1.2
--1.4
25
Drain Current, ID -- A
--10.
0
V
--1.6
Drain Current, ID -- A
ID -- VGS
--2.0
--6.
0V
--4
.5V
--4
.0V
--2.0
Crss
10
2
3
5
7
--1.0
2
Drain Current, ID -- A
3
5
7
--10
IT16083
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT16084
No. A1905-3/7
CPH3355
--100
7
5
3
2
VDS= --15V
ID= --2.5A
--9
--8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ASO
VGS -- Qg
--10
--7
--6
--5
--4
--3
--2
--1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
4.5
IT16220
PD -- Ta
2.0
Allowable Power Dissipation, PD -- W
4.0
--10
7
5
3
2
IDP= --10A (PW≤10μs)
DC
--1.0
7
5
3
2
--0.1
7
5
3
2
10
ms
ID= --2.5A
op
er
Operation in this area
is limited by RDS(on).
10
0μ
s
10
1m
0m
s
s
on
(T
a=
25
°C
)
ati
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01 2 3
5 7--0.1
2 3
5 7--1.0 2 3
5 7--10
2 3
Drain-to-Source Voltage, VDS -- V
5 7--100
IT16221
When mounted on ceramic substrate
(900mm2×0.8mm)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16222
No. A1905-4/7
CPH3355
Embossed Taping Specification
CPH3355-TL-H
No. A1905-5/7
CPH3355
Outline Drawing
CPH3355-TL-H
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1905-6/7
CPH3355
Note on usage : Since the CPH3355 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1905-7/7
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