CPH3355 Ordering number : ENA1905A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3355 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=120mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --30 V ±20 V Allowable Power Dissipation ID IDP PD 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) --2.5 A --10 A PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3355-TL-H 0.6 2.9 0.15 Packing Type: TL LOT No. WM 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 60612 TKIM/D2210PE TKIM TC-00002536 No. A1905-1/7 CPH3355 Electrical Characteristic at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--1A 1.9 RDS(on)1 ID=--1A, VGS=--10V 120 156 mΩ RDS(on)2 ID=--0.5A, VGS=--4.5V 187 262 mΩ RDS(on)3 ID=--0.5A, VGS=--4V 213 299 mΩ Input Capacitance Ciss VDS=--10V, f=1MHz 172 pF Output Capacitance Coss VDS=--10V, f=1MHz 51 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 36 pF Turn-ON Delay Time td(on) See specified Test Circuit. 4.5 ns Rise Time tr See specified Test Circuit. 4.2 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 20 ns Fall Time tf See specified Test Circuit. 10.6 ns Total Gate Charge Qg nC Qgs VDS=--15V, VGS=--10V, ID=--2.5A VDS=--15V, VGS=--10V, ID=--2.5A 3.9 Gate-to-Source Charge 0.6 nC VDS=--15V, VGS=--10V, ID=--2.5A IS=--2.5A, VGS=0V --0.86 Static Drain-to-Source On-State Resistance Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD --1.2 --1 μA ±10 μA --2.6 V S 0.8 nC --1.5 V Switching Time Test Circuit VIN VDD= --15V 0V --10V ID= --1A RL=15Ω VIN D VOUT PW=10μs D.C.≤1% G CPH3355 P.G 50Ω S Ordering Information Device CPH3355-TL-H Package Shipping memo CPH3 3,000pcs./reel Pb Free and Halogen Free No. A1905-2/7 CPH3355 ID -- VDS --8.0 V VDS= --10V --1.8 --1.6 --1.0 --0.8 --0.6 Ta= 75 --0.4 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V --1.0A 400 300 200 100 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V 2 °C -25 =Ta 1.0 C 75° 7 °C 5 25 3 --4.0 --4.5 IT16078 .5A = --0 I D , V .0 = --4 VGS --0.5A , I D= V 5 . 4 = -VGS = --1.0A 10.0V, I D V GS= -- 200 100 --20 0 20 40 60 80 100 120 140 160 IT16219 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 5 7 --10 IT16081 Drain Current, ID -- A 3 td(off) 2 tf 10 7 td(on) 5 tr --0.6 --0.8 --1.0 --1.2 IT16082 f=1MHz 7 5 Ciss, Coss, Crss -- pF 5 --0.4 Ciss, Coss, Crss -- VDS 1000 VDD= --15V VGS= --10V 7 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 100 3 Ciss 2 100 7 Coss 5 3 3 2 2 1.0 --0.1 --3.5 3 2 2 0.1 --0.01 300 --10 7 5 5 3 --3.0 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --18 VDS= --10V 7 --2.5 400 IT16218 | yfs | -- ID 10 --2.0 RDS(on) -- Ta 0 --60 --40 0 0 --1.5 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --0.5A --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 500 --0.5 IT16039 RDS(on) -- VGS 600 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --1.0 Ta=7 5°C 25°C --25 °C 0 Switching Time, SW Time -- ns --25°C --0.8 --1.2 °C --3.0 V GS= °C V --1.2 --1.4 25 Drain Current, ID -- A --10. 0 V --1.6 Drain Current, ID -- A ID -- VGS --2.0 --6. 0V --4 .5V --4 .0V --2.0 Crss 10 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT16083 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT16084 No. A1905-3/7 CPH3355 --100 7 5 3 2 VDS= --15V ID= --2.5A --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V ASO VGS -- Qg --10 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC 4.5 IT16220 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 4.0 --10 7 5 3 2 IDP= --10A (PW≤10μs) DC --1.0 7 5 3 2 --0.1 7 5 3 2 10 ms ID= --2.5A op er Operation in this area is limited by RDS(on). 10 0μ s 10 1m 0m s s on (T a= 25 °C ) ati Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16221 When mounted on ceramic substrate (900mm2×0.8mm) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16222 No. A1905-4/7 CPH3355 Embossed Taping Specification CPH3355-TL-H No. A1905-5/7 CPH3355 Outline Drawing CPH3355-TL-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1905-6/7 CPH3355 Note on usage : Since the CPH3355 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1905-7/7