BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) A Collector 3 L 3 3 C B Top View 1 1 1 Base 2 K 2 E 2 D Emitter F H G REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS at TA = 25°C SYMBOL RATINGS UNIT Collector - Base Voltage PARAMETER VCBO 50 V Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 300 mW TJ, TSTG 150, -55 ~ +150 °C Junction & Storage Temperature CHARACTERISTICS at TA = 25°C PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-base Breakdown Voltage VCBO 50 - - V IC = 10 µA, IE = 0 Collector-emitter Breakdown Voltage VCEO 45 - - V IC = 10 mA, IB = 0 Emitter-base Breakdown Voltage VEBO 5 - - V IE = 1 µA, IC = 0 Collector Cut-off Current ICBO - - 0.1 µA VCB = 45V, IE = 0 µA VEB = 4V, IC = 0 Emitter Cut-off Current IEBO - - 0.1 DC Current Gain hFE(1) 100 - 600 DC Current Gain TEST CONDITIONS VCE = 1 V, IC = 100 mA hFE(2) 40 - - Collector-emitter Saturation Voltage VCE(sat) - - 0.7 V IC = 500mA, IB = 50 mA VCE = 1 V, IC = 500 mA Base-emitter Saturation Voltage VBE(sat) - - 1.2 V IC = 500mA, IB = 50 mA Base-emitter Voltage VBE - - 1.2 V VCE = 1V, IC = 500mA Collector Capacitance Cob - 10 - pF VCB = 10V, f=1MHz Transition Frequency fT 100 - - MHz VCE = 5 V, IC = 10 mA, f = 100MHz CLASSIFICATION OF hFE(1) Rank BC817-16 BC817-25 BC817-40 Range 100 - 250 160 - 400 250 - 600 Marking 6A 6B 6C 16-Nov-2009 Rev. D Page 1 of 2 BC817 -16, -25, -40 Elektronische Bauelemente 500 mA, 50 V NPN Plastic Encapsulate Transistors CHARACTERISTIC CURVES 16-Nov-2009 Rev. D Page 2 of 2