Ordering number : EN8998C FW344A Power MOSFET http://onsemi.com 30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8 Features • • • • ON-resistance Nch : RDS(on)1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) P-channel Unit 30 --30 V ±20 ±20 V ID IDP 4.5 --3.5 A Drain Current (PW≤10μs) Duty cycle≤1% 5 --4 A Drain Current (PW≤10μs) IDP Duty cycle≤1% 18 --14 Allowable Power Dissipation When mounted on ceramic substrate (2000mm2×0.8mm) 1unit Total Dissipation PD PT 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C 1.4 When mounted on ceramic substrate (2000mm2×0.8mm) A W This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7072-001 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel FW344A-TL-2W 4.9 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 Semiconductor Components Industries, LLC, 2013 July, 2013 0.715 0.22 5 3.9 6.0 8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Packing Type : TL Marking FW344 A LOT No. TL Electrical Connection 8 7 6 5 1 2 3 4 SOIC8 91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9 FW344A Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4.5A 2.6 RDS(on)1 ID=4.5A, VGS=10V 49 64 mΩ RDS(on)2 ID=2A, VGS=4.5V 80 112 mΩ RDS(on)3 ID=2A, VGS=4V 100 140 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 30 V 1.2 1 μA ±10 μA 2.6 V S 280 pF 60 pF Crss 30 pF td(on) tr 6 ns 21 ns 20 ns Fall Time td(off) tf Total Gate Charge Qg VDS=10V, f=1MHz See specified Test Circuit. Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=4.5A, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, VGS=10V, ID=4.5A 10 ns 5.6 nC 1.2 nC 0.8 0.85 nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance VGS(off) | yfs | --1.2 --2.3 V ID=--3.5A, VGS=--10V ID=--2A, VGS=--4.5V 78 102 mΩ RDS(on)2 125 175 mΩ RDS(on)3 ID=--2A, VGS=--4V 145 205 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time VGS=±16V, VDS=0V VDS=--10V, ID=--1mA 3.9 Input Capacitance Rise Time V VDS=--10V, ID=--3.5A RDS(on)1 Static Drain-to-Source On-State Resistance --30 VDS=--30V, VGS=0V S 250 pF 65 pF Crss 46 pF td(on) tr 5.4 ns 34 ns 28 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--10V, ID=--3.5A 24 ns 5 nC 1 nC 1.2 IS=--3.5A, VGS=0V --0.88 nC --1.5 V No.8998-2/9 FW344A Switching Time Test Circuit [N-channel] 10V 0V [P-channel] VDD=15V VIN 0V --10V ID=4.5A RL=3.3Ω VIN D PW=10μs D.C.≤1% VDD= --15V VIN VOUT D PW=10μs D.C.≤1% G VOUT G FW344A P.G ID= --3.5A RL=4.3Ω VIN 50Ω FW344A P.G S 50Ω S Ordering Information Device FW344A-TL-2W Shipping memo SOIC8 2,500pcs./reel Pb Free and Halogen Free ID -- VDS V 7 VGS=3.0V 1.5 3 1.0 2 0.5 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 0.9 200 150 100 50 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 0.5 10 IT16699 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Source Voltage, VGS -- V [Nch] Ta=25°C 4.5A 0 0 IT16697 ID=2.0A 250 0 1.0 5.0 IT16698 RDS(on) -- Ta 200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 Ta= 75° --2 C 5°C 2.0 5 °C 2.5 6 25 3.0 [Nch] VDS=10V 8 Drain Current, ID -- A 3.5 ID -- VGS 9 4.0 4.0 [Nch] 6.0V 10.0V 8.0V 4.5V 4.5 Drain Current, ID -- A Package [Nch] 150 2.0A , I D= 4.0V = VGS 2.0A ,I = 4.5V D = VGS A I =4.5 0.0V, D 1 = V GS 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16700 No.8998-3/9 FW344A 5 3 C 25° 2 5°C 1.0 = Ta 7 --2 5 °C 75 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 100 0.1 7 5 3 td(off) 2 10 tf td(on) 7 5 tr 3 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16702 Ciss, Coss, Crss -- VDS 1000 [Nch] f=1MHz 7 5 Ciss, Coss, Crss -- pF Ciss 3 2 100 7 Coss 5 Crss 3 2 2 5 7 2 1.0 3 5 Drain Current, ID -- A VGS -- Qg 10 10 7 10 IT16703 [Nch] Drain Current, ID -- A 6 5 4 3 2 1 2 3 5 4 Total Gate Charge, Qg -- nC --3.0V --1.5 --1.0 --0.5 VGS= --2.5V --0.1 --0.2 --0.3 --0.4 --0.5 op er ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 ID -- VGS --7 5 7 100 IT16749 [Pch] --6 --2.0 0 DC 1.0 7 5 3 2 VDS= --10V --10 . --2.5 0μ 1m s 10 s 10 ms 0m s 10 s Drain-to-Source Voltage, VDS -- V [Pch] --6. 0V --4 .5V --4 .0V 0V --8.0V --3.0 [Nch] 10 ID=4.5A IT16705 ID -- VDS --3.5 30 IT16704 IDP=18A (PW≤10μs) 10 7 5 3 2 0.01 0.01 6 Drain Current, ID -- A 1 0 20 ASO 100 7 5 3 2 8 7 10 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4.5A 9 0 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT16750 --5 --4 --3 --2 --1 0 0 --0.5 --1.0 --1.5 --2.0 --2 Ta= 5° 75° C C 3 °C 2 25 Switching Time, SW Time -- ns 5 1.0 0.1 Gate-to-Source Voltage, VGS -- V 3 2 Diode Forward Voltage, VSD -- V [Nch] VDD=15V VGS=10V 7 Drain Current, ID -- A 1.0 7 5 0.01 5 7 10 IT16701 Drain Current, ID -- A 0 3 2 3 2 2 0 [Nch] VGS=0V 5°C 25°C --25° C 7 IS -- VSD 10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] VDS=10V Ta= 7 | yfs | -- ID 10 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 --4.0 IT16751 No.8998-4/9 FW344A ID= --2A --3.5A 200 150 100 50 0 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V 3 2 C 5° --2 = °C Ta 75 7 5 °C 25 3 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 SW Time -- ID 100 --40 --20 0 20 40 60 80 100 120 140 160 IT16753 IS -- VSD [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 5 3 tf 2 10 7 td(on) 5 tr 3 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT16755 Ciss, Coss, Crss -- VDS 1000 [Pch] f=1MHz 7 5 3 Ciss, Coss, Crss -- pF td(off) 0 Diode Forward Voltage, VSD -- V [Pch] VDD= --15V VGS= --10V 7 Switching Time, SW Time -- ns 50 --0.01 5 7 --10 IT16754 Drain Current, ID -- A Ciss 2 100 7 Coss 5 Crss 3 2 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 [Pch] VDS= --10V ID= --3.5A --9 10 --10 --7 --6 --5 --4 --3 --2 --1 1 2 3 4 Total Gate Charge, Qg -- nC --5 5 6 IT16757 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 Drain Current, ID -- A --8 0 0 IT16756 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V A --3.5 V, I D= --10.0 V GS= 3 2 2 0 .0A = --2 V, I D --4.5 = VGS 100 --10 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Pch] 5 1.0 = -VGS 150 Ambient Temperature, Ta -- °C VDS= --10V 7 .0A = --2 , ID 4.0V IT16752 | yfs | -- ID 10 200 0 --60 --10 [Pch] 250 Ta=7 5°C 25°C 250 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ [Pch] Ta=25°C --25°C RDS(on) -- VGS 300 --10 7 5 3 2 ASO [Pch] IDP= --14A(PW≤10μs) 100 μs 1 10 ms ms 10 0m s ID= --3.5A DC --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT13192 10 s op era Operation in this area tion is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT16758 No.8998-5/9 FW344A PD -- Ta [Nch/Pch] 1.7 1.5 1.4 To t al 1.0 Di ss 1u ip nit ati on 0.5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C PD (FET1) -- PD (FET2) 1.6 When mounted on ceramic substrate (2000mm2×0.8mm) Allowable Power Dissipation (FET1), PD -- W Allowable Power Dissipation, PD -- W 2.0 When mounted on ceramic substrate (2000mm2×0.8mm) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 160 0 0.2 0.4 0.6 0.8 1.0 1.2 Allowable Power Dissipation (FET1), PD -- W IT16759 1.4 1.6 IT16760 Taping Specification FW344A-TL-2W 3DFNLQJ )RUPDW &DUULHU 7DSH 7\SH % 3DFNLQJ PHWKRG FRQWDLQHG SFV 5HHO ,QQHU ER[ 2XWHU ER[ ,QQHU %2; : 2XWHU %2; : UHHOV FRQWDLQHG LQQHU ER[HV FRQWDLQHG 'LPHQVLRQV PP H[WHUQDO 'LPHQVLRQV PP H[WHUQDO 2XWHU ER[ ODEHO 5HHO ODEHO,QQHU ER[ ODEHO XQLW PP ,W LV D ODEHO DW WKH WLPH RI IDFWRU\ VKLSPHQWV 7KH IRUP RI D ODEHO PD\ FKDQJH LQ SK\VLFDO GLVWULEXWLRQ SURFHVV 7\SH 1R 3 7<3( ႼႼႼႼႼႼႼႼႼ 7<3( &2'( /27 1R 7 /27 ႼႼ 7<3( 4XDQWLW\ 4 47< 2ULJLQ = 63( 6 ,$/ ႼႼႼႼ ႼႼႼႼႼႼႼႼႼႼႼႼႼႼ /($' )5(( 47< 62,& 3DFNLQJ IRUPDW 0D[LPXP 1XPEHU RI GHYLFHV 3DFNDJH 1DPH ႼႼႼႼႼႼႼႼႼ /27 3$&.$*( 63(&,$/ 5HHO ODEHO ႼႼႼႼႼႼႼႼ ႼႼႼႼ SFV /($' )5((ೈ ႼႼႼႼႼႼႼႼ ႼႼႼႼႼႼႼႼ ႼႼႼႼႼႼႼႼ 63(&,$/ 127( 7KH /($' )5(( GHVFULSWLRQ VKRZV WKDW LW LV FRPSOHWH OHDG IUHH /DEHO -(,7$ 3KDVH /($' )5(( -(,7$ 3KDVH =& $66(0%/< ',))86,21 No.8998-6/9 FW344A 7DSLQJ FRQILJXUDWLRQ • • • •• •• •• • ˳ s s s s s s &DUULHU WDSH VL]H XQLW PP s s s ˳ s 'HYLFH SODFHPHQW GLUHFWLRQ 3 LQ ,QGH [ 5HH O )HHG 5RXQG +R OH Feed D i rec t ion 7/ &D U U LH U 7DSH 3DFNLQJ W\SHᨿᨿᨿᨿᨿ7/ /HDGHU SRUWLRQ DQG WUDLOHU SRUWLRQ XQLW PP᧥ RU PRUH 7UDLOHU SRUWLRQ 'HYLFH PRXQWLQJ SRUWLRQ 'HYLFH PRXQWLQJ SRUWLRQ ,GOH SRUWLRQ RU PRUH /HDGHU SRUWLRQ RU PRUH &RYHU WDSH /HDGHU SRUWLRQ RU PRUH No.8998-7/9 FW344A Outline Drawing FW344A-TL-2W Land Pattern Example Mass (g) Unit 0.082 mm * For reference Unit: mm 5.60 1.75 0.65 1.27 No.8998-8/9 FW344A Note on usage : Since the FW344A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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