HY HTRI20L100CT Schottky barrier rectifier Datasheet

HTR20L100CT, HTRF20L100CT
HTRI20L100CT, HTRB20L100CT
HY ELECTRONIC (CAYMAN) LIMITED
Low VF=0.51V at IF=5A
REVERSE VOLTAGE 100
Volts
FORWARD CURRENT
Amperes
20
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SCHOTTKY BARRIER RECTIFIERS
ChipSize
FEATURES
80
L
TO-220AB
ITO-220AB
Pb
●Metal of silicon rectifier , majority carrier conduction
●Trench Schottky Technology
RoHS
●Low power loss, high efficiency
COMPLIANT
●High current capability, low VF
●High surge capacity
●Plastic package has
UL flammability
classification 94V-0
HTR20L100CT
HTRF20L100CT
TO-263AB
TO-262AA
HTRB20L100CT
HTRI20L100CT
●For use in low voltage,high frequency inverters,free
wheeling,switching power supplies, DC-DC
converter,and polarity protection applications
MECHANICAL DATA
●Case: TO-220AB / ITO-220AB / TO-262AA / TO-263AB
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
CHARACTERISTICS
SYMBOL HTR20L100CT, HTRF20L100CT, HTRI20L100CT, HTRB20L100CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
V
Maximum RMS Voltage
VRMS
70
V
Maximum DC Blocking Voltage
VDC
100
V
Maximum Average Forward Rectified Current ( See Fig.1)
20
I(AV)
Maximum Average Forward Rectified Current ( Per Leg )
A
10
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
140
A
IRRM
1
A
TJ
-55 to +150
℃
TSTG
-55 to +175
℃
Super Imposed on Rated Load
Peak repetitive reverse current at tp = 2 μs, 1 kHz
Operating Temperature Range
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER / CONDITIONS
SYMBOL
Typ
Max
UNIT
VBR
110 (minimun)
-
V
0.55
0.59
0.51
0.55
0.69
0.74
Breakdown voltage per diode
Forward Voltage (Note1)
IF=5A @TJ=25℃
IF=5A @TJ=125℃
VF
IF=10A @TJ=25℃
0.63
IF=10A @TJ=125℃
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Bolcking Voltage
@TJ=125℃
0.67
IR
Typical Junction Capacitance (Note2)
V
CJ
50
uA
30
mA
437
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typ
SYMBOL
Thermal Resistance Per Diode (Note3)
RθJC
UNIT
HTR20L100CT
HTRF20L100CT
HTRI20L100CT
HTRB20L100CT
3.0
5.5
3.5
3.5
℃/W
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 5.0V DC.
3.Thermal resistance junction to case.
Rev.1, 1-Mar-2017
RATING AND CHARACTERTIC CURVES
HTR20L100CT,
HTRI20L100CT,
HTRF20L100CT
HTRB20L100CT
150
Peak forward surge current (A)
Average Forward Current (A)
25
20
15
HTR20L100CT
10
HTRF20L100CT
HTRB20L100CT
5
0
PULSE WIDTH 8.3 ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
100
50
0
0
25
50
75
100
125
150
1
10
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum NON-Repetitive Surge
Instantaneous Reverse Current (mA)
Instantaneous Forward Current (A)
10
Tj=150°C
1
Tj=125°C
Tj=25°C
100
Tj=150°C
10
Tj=125°C
1
0.1
Tj=25°C
0.01
0.001
0.1
0
0.2
0.4
0.6
20
0.8
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward
Characteristics Per Leg
Figure 4. Typical Reverse Characteristics
8
Average Power Loss(W)
10,000
Junction Capacitance (pF)
100
Number of Cycles at 60Hz
1,000
100
6
d=0.3
4
d=0.2
d=0.1
d=1.0
2
d=0.8
d=0.5
10
0
0.1
1
10
100
0
2
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
4
6
8
10
Average Forward Current(A)
Figure 6. Forward Power Loss Characteristics
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
Rev.1, 1-Mar-2017
PACKAGE OUTLINE DIMENSIONS in millimeters
HTR20L100CT,
HTRI20L100CT,
HTRF20L100CT
HTRB20L100CT
TO-220AB
TO-262AA
TO-263AB
ITO-220AB
www.hygroup.com.tw
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
Rev.1, 1-Mar-2017
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
Rev.1, 1-Mar-2017
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