HSB226WK Silicon Schottky Barrier Diode for High Speed Switching REJ03G0592-0200 Rev.2.00 Sep 15, 2006 Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Name Package Code HSB226WK E6 CMPAK PTSP0003ZB-A Pin Arrangement 3 2 1 (Top View) Rev.2.00 Sep 15, 2006 page 1 of 4 1. Anode 2. Anode 3. Cathode HSB226WK Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Symbol VRRM Non-Repetitive peak forward surge current Forward current IFSM * * 2 IF * Junction temperature Storage temperature Tj Tstg Value 25 Unit V 200 50 mA mA 125 −55 to +125 °C °C 1 2 Notes: 1. 10 ms sine wave 1 pulse 2. Two device total Electrical Characteristics * (Ta = 25°C) Min Typ Max Unit Forward voltage Item VF1 VF2 Symbol — — — — 0.33 0.38 V IF = 1 mA IF = 5 mA Reverse current Capacitance IR C — — — — 450 2.80 nA pF VR = 20 V VR = 1 V, f = 1 MHz Note: Per one device. Rev.2.00 Sep 15, 2006 page 2 of 4 Test Condition HSB226WK Main Characteristic 10–4 101 100 Reverse current IR (A) Forward current IF (A) 10–1 10–2 10–3 –4 Ta = 75°C 10–5 Ta = 25°C 10 10–6 10–5 Ta = 75°C 10–6 Ta = 25°C 10–7 10–7 10–8 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 10–8 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.2.00 Sep 15, 2006 page 3 of 4 HSB226WK Package Dimensions JEITA Package Code RENESAS Code SC-70 Previous Code PTSP0003ZB-A CMPAK / CMPAKV MASS[Typ.] 0.006g D e Q c HE E L A A b e Reference A2 Symbol A A1 e1 b l1 c A — A Section b2 Pattern of terminal position areas Rev.2.00 Sep 15, 2006 page 4 of 4 A A1 A2 b c D E e HE L b2 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 - Nom 0.9 0.3 0.16 2.0 1.25 0.65 2.1 0.425 1.5 0.2 Max 1.1 0.1 1.0 0.4 0.26 2.2 1.35 2.4 0.45 0.9 - Sales Strategic Planning Div. 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