MMUN2111LT1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. http://onsemi.com PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) Features • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating MARKING DIAGRAM 3 1 SOT−23 CASE 318 STYLE 6 2 A6x M G G 1 A6x x M G = Device Code = A − L (Refer to page 2) = Date Code* = Pb−Free Package Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc (Note: Microdot may be in either location) IC 100 mAdc *Date Code orientation may vary depending upon manufacturing location. Symbol Max Unit PD 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C °C/W ORDERING INFORMATION Device Package Shipping † MMUN21xxLT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10000/Tape & Reel Thermal Resistance, Junction-to-Ambient RqJA 508 (Note 1) 311 (Note 2) °C/W MMUN21xxLT1G Thermal Resistance, Junction-to-Lead RqJL 174 (Note 1) 208 (Note 2) °C/W MMUN21xxLT3 TJ, Tstg −55 to +150 °C Junction and Storage, Temperature Range MMUN21xxLT3G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad SOT−23 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 5 1 Publication Order Number: MMUN2111LT1/D MMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping MMUN2111LT1, G MMUN2111LT3, G Device* SOT−23 A6A 10 10 3000/Tape & Reel 10,000/Tape & Reel MMUN2112LT1, G SOT−23 A6B 22 22 3000/Tape & Reel MMUN2113LT1, G MMUN2113LT3, G SOT−23 A6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MMUN2114LT1, G SOT−23 A6D 10 47 3000/Tape & Reel MMUN2115LT1, G (Note 3) SOT−23 A6E 10 ∞ 3000/Tape & Reel MMUN2116LT1, G (Note 3) SOT−23 A6F 4.7 ∞ 3000/Tape & Reel MMUN2130LT1, G (Note 3) SOT−23 A6G 1.0 1.0 3000/Tape & Reel MMUN2131LT1, G (Note 3) SOT−23 A6H 2.2 2.2 3000/Tape & Reel MMUN2132LT1, G (Note 3) SOT−23 A6J 4.7 4.7 3000/Tape & Reel MMUN2133LT1, G (Note 3) SOT−23 A6K 4.7 47 3000/Tape & Reel MMUN2134LT1, G (Note 3) SOT−23 A6L 22 47 3000/Tape & Reel *The “G’’ suffix indicates Pb−Free package available. 3. New devices. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 MMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 kW R1/R2 0.8 0.17 − 0.8 0.055 1.0 0.21 − 1.0 0.1 1.2 0.25 − 1.2 0.185 ON CHARACTERISTICS (Note 5) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) VOL MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 Vdc Vdc MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 MMUN2111LT1 Series PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RqJA = 625°C/W 50 0 −50 0 50 100 150 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 1 IC/IB=10 TA=−25°C 75°C 0.1 0.01 4 25°C −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 75°C 100 25°C VO = 0.2 V TA=−25°C 10 1 0.1 0.01 50 Figure 4. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 80 Figure 2. VCE(sat) versus IC TA=75°C 0.001 60 Figure 1. Derating Curve VCE = 10 V 100 40 IC, COLLECTOR CURRENT (mA) C ob , CAPACITANCE (pF) h FE , DC CURRENT GAIN (NORMALIZED) 20 0 TA, AMBIENT TEMPERATURE (°C) 1000 10 25°C TA=−25°C 10 25°C 75°C 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 0.1 10 Figure 5. Output Current versus Input Voltage 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 50 MMUN2111LT1 Series 1000 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 IC/IB=10 TA=−25°C 25°C 1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 100 10 80 1 10 Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 75°C 25°C TA=−25°C 10 1 0.1 VO = 5 V 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 0.2 V TA=−25°C 25°C 10 75°C 1 0 10 6 7 8 9 10 Figure 10. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 3 25°C −25°C 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 MMUN2111LT1 Series 1 1000 IC/IB=10 TA=−25°C 25°C 75°C 0.1 0.01 h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 0 0 TA=75°C −25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 VO = 2 V TA=−25°C 25°C 75°C 10 1 10 6 7 8 9 10 Figure 15. Output Current versus Input Voltage 100 0 5 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 0.1 25°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 MMUN2111LT1 Series 1 180 IC/IB=10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 −25°C 120 100 80 60 40 20 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC TA=75°C f = 1 MHz lE = 0 V TA = 25°C 3.5 3 IC, COLLECTOR CURRENT (mA) C ob , CAPACITANCE (pF) 90 100 100 4 2.5 25°C −25°C 10 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) TA=−25°C 25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 7 MMUN2111LT1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−08 ISSUE AM NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 VIEW C MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMUN2111LT1/D