AOP802 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOP802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP802 is Pb-free (meets ROHS & Sony 259 specifications). AOP802L is a Green Product ordering option. AOP802 and AOP802L are electrically identical. VDS (V) = 60V ID = 7.9A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 D2 G2 S1 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 40 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 7.9 TA=25°C Power Dissipation Maximum 60 RθJA RθJL Typ 30 66 25 Max 40 85 35 Units °C/W °C/W °C/W AOP802 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C VGS=10V, I D=7.9A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, I D=7.1A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=7.9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr Units V VDS=48V, VGS=0V Zero Gate Voltage Drain Current IS Max 60 IDSS RDS(ON) Typ 5 100 nA 2.1 3 V 17.8 25 32.2 42 19.7 30 A 30 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, I D=7.9A mΩ mΩ S 0.74 1920 VGS=0V, VDS=15V, f=1MHz µA 1 V 4 A 2300 pF 155 pF 116 pF 0.65 0.8 Ω 47.6 68 nC 24.2 30 nC 6 nC Gate Drain Charge 14.4 nC Turn-On DelayTime 7.4 ns VGS=10V, VDS=30V, RL=3.9Ω, RGEN=3Ω 5.1 ns 28.2 ns 5.5 Body Diode Reverse Recovery Time IF=7.9A, dI/dt=100A/µs 34 Body Diode Reverse Recovery Charge IF=7.9A, dI/dt=100A/µs 46 ns 41 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 4V 25 4.5V VDS=5V 125°C 20 ID(A) ID (A) 30 20 3.5V 15 10 10 25°C 5 VGS=3V 0 0 1 2 3 4 0 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 Normalized On-Resistance 2.2 22 VGS=4.5V 20 18 VGS=10V 16 14 2 VGS=10V ID=7.9A 1.8 1.6 VGS=4.5V ID=7.1A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 ID=7.9A 1.0E+00 40 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 24 RDS(ON) (mΩ) 2.5 30 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=7.9A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 Coss 1000 Crss 2 500 0 0 0 10 20 30 40 50 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0.1s 10ms 1s 10s 1.0 TJ(Max)=150°C TA=25°C DC 20 0 0.001 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 10 0.1 1 TJ(Max)=150°C TA=25°C 40 Power (W) ID (Amps) 10µs 100µs 1ms 10.0 10 30 50 RDS(ON) limited 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000