ON MCH6321 P-channel power mosfet Datasheet

Ordering number : ENA0963B
MCH6321
P-Channel Power MOSFET
–20V, –4A, 83mΩ, Single MCPH6
http://onsemi.com
Features
•
•
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
Gate-to-Source Voltage
VGSS
±10
V
V
Drain Current (DC)
ID
--4
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
--16
A
Allowable Power Dissipation
When mounted on ceramic substrate (1200mm2×0.8mm)
1.5
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7022A-009
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
4
0 to 0.02
1
2
0.3
0.85
1
6
2
5
3
4
JV
TL
3
0.65
Marking
LOT No.
0.25
Packing Type : TL
LOT No.
0.07
MCH6321-TL-E
MCH6321-TL-W
0.15
2.1
1.6
0.25
2.0
Electrical Connection
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
1, 2, 5, 6
3
MCPH6
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002975/62012TKIM/N1407TIIM PE No. A0963-1/5
MCH6321
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Zero-Gate Voltage Drain Current
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Gate-to-Source Leakage Current
Cutoff Voltage
Conditions
Ratings
min
--20
IGSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VGS(off)
VDS=--10V, ID=--1mA
--0.4
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--2A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
RDS(on)3
ID=--0.2A, VGS=--1.8V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
2.5
typ
Unit
max
V
--1
mA
±10
mA
--1.3
4.3
V
S
63
83
88
125
130
200
mW
mW
mW
375
pF
77
pF
Crss
58
pF
td(on)
tr
8.1
ns
31
ns
40
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--4A
39
ns
4.6
nC
0.8
nC
1.3
IS=--4A, VGS=0V
--0.86
nC
--1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--4V
VDD= --10V
VIN
ID= --2A
RL=5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
MCH6321
P.G
50Ω
S
Ordering Information
Device
MCH6321-TL-E
MCH6321-TL-W
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A0963-2/5
MCH6321
ID -- VDS
8V
--0.1
--0.2
--0.3
--0.6
--0.7
--0.8
--0.9
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--1.0A
--2.0A
50
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
IT13026
2
=
Ta
1.0
C
5°
--2
75
°C
°C
25
7
5
2
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
SW Time -- ID
2
3
5 7 --10
IT13012
50
--40
--20
7
5
td (off)
tf
3
2
tr
td(on)
10
7
2
3
5
7
--1.0
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
--2.5
IT13009
120
IS -- VSD
140
160
IT13027
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
1000
7
5
100
5
--0.1
100
--0.001
VDD= --10V
VGS= --4V
--2.0
2A
= --0.
8V, I D
.
1
-=
VGS
--1.0A
, I D=
V
.5
2
-V GS=
--2.0A
V, I D=
.5
4
-V GS=
150
--0.01
7
5
3
2
3
--1.5
200
--10
7
5
3
2
5
3
--1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
0
--60
--8
VDS= --10V
7
--0.5
250
Ta=25°C
200
100
0
IT13008
250
ID= --0.2A
0
--1.0
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
--0.5
Ciss, Coss, Crss -- pF
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--0.4
Ta=7
5°C
25°C
--25°
C
0
10
Switching Time, SW Time -- ns
25°C
VGS= --1.0V
300
0
--2
--1
--0.5
150
--25°
C
--1.0
--3
Ta=7
5°C
Drain Current, ID -- A
--3.
0V
--1.5V
--1.5
0
VDS= --10V
--1
.
--4.5V
--2.0
ID -- VGS
--5
--4
--8.0V
--2.5
Drain Current, ID -- A
--2.
5V
--3.0
--1.2
IT13013
f=1MHz
Ciss
3
2
100
Coss
Crss
7
5
3
2
Drain Current, ID -- A
3
5
7
--10
IT13014
2
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT13015
No. A0963-3/5
MCH6321
VGS -- Qg
VDS= --10V
ID= --4A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--10
7
5
3
2
0
1
2
3
4
Total Gate Charge, Qg -- nC
5
IT13028
PD -- Ta
1.6
ASO
IDP= --16A
ID= --4A
DC
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.5
0
op
10
10
ms
0m
era
tio
Operation in this area
is limited by RDS(on).
PW≤10µs
10
0µ
1m s
s
s
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2×0.8mm)
--0.01
--0.01
2
3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
IT13029
1.5
1.4
ou
M
1.2
nt
ed
on
1.0
am
er
ac
ic
0.8
d
ar
bo
0.6
m
0m
20
(1
0.4
8m
0.
2×
0.2
)
0
m
Allowable Power Dissipation, PD -- W
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13030
No. A0963-4/5
MCH6321
Outline Drawing
MCH6321-TL-E, MCH6321-TL-W
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
Note on usage : Since the MCH6321 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0963-5/5
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