BTS 441 R
Smart Highside Power Switch
One Channel: 20mΩ
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Package
RON
Vbb(on)
IL(ISO)
IL(lim)
TO-263-5-2
20mΩ
4.75 ... 41V
21A
65A
SMD
TO-220-5-12
Straight
General Description
•
•
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS® technology.
Providing embedded protective functions.
Application
•
•
•
•
µC compatible power switch for 5V, 12 V and 24 V DC applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions
•
•
•
•
•
Very low standby current
Optimized static electromagnetic compatibility (EMC)
µC and CMOS compatible
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump) with external
GND-resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Diagnostic Function
•
•
•
IN
ST
Logic
with
protection
functions
PROFET
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
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Vbb
OUT
Load
GND
1
2003-Oct-01
BTS 441 R
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
temperature
sensor
IN
ESD
LOAD
Open load
detection
ST
GND
PROFET
Pin configuration
Pin Definitions and Functions
(top view)
Pin
Symbol
Function
1
GND
Logic ground
2
IN
Input, activates the power switch in
case of logical high signal
3
Vbb
Positive power supply voltage
The tab is shorted to pin 3
4
ST
Diagnostic feedback, low on failure
Tab = VBB
1
2
GND IN
5
OUT
Output to the load
Tab
Vbb
Positive power supply voltage
The tab is shorted to pin 3
Infineon Technologies AG
2
(3)
4
5
ST OUT
2003-Oct-01
BTS 441 R
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2)= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
(see diagram, p.7) IL(ISO) = 21 A, RL= 0 Ω: E4)AS=0.7J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
Out to all other pins shorted:
Symbol
Vbb
Vbb
43
34
Unit
V
V
60
V
IL
Tj
Tstg
self-limited
-40 ...+150
-55 ...+150
A
°C
Ptot
125
W
ZL
VESD
2.1
1.0
4.0
8.0
mH
kV
-10 ... +16
±2.0
±5.0
V
mA
≤1
≤ 75
K/W
VLoad dump3)
Values
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 7
Thermal resistance
1)
2)
3)
4)
5)
chip - case:
junction - ambient (free air):
SMD version, device on pcb5):
RthJC
RthJA
≤ 33
Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
EAS is the maximum inductive switch off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
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2003-Oct-01
BTS 441 R
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (Vbb (pin3) to OUT (pin5));
IL = 2 A Vbb≥7V:
Tj=25 °C: RON
Tj=150 °C:
--
15
28
20
37
mΩ
17
21
--
A
--
--
2
mA
40
40
90
110
200
250
µs
dV /dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
4.75
4.75
4.75
5.0
41
43
-----
-----47
5
--1.5
41
43
43
43
-52
10
10
25
10
V
--
2
4
see diagram page 9
Nominal load current (pin 3 to 5)
‘ISO 10483-1, 6.7:VON=0.5V, TC=85°C
IL(ISO)
Output current (pin 5) while GND disconnected or
GND pulled up6), Vbb=30 V, VIN= 0,
IL(GNDhigh)
see diagram page 7
Turn-on time
IN
Turn-off time
IN
RL = 12 Ω,
Slew rate on
10 to 30% VOUT, RL = 12 Ω,
Slew rate off
70 to 40% VOUT, RL = 12 Ω,
to 90% VOUT: ton
to 10% VOUT: toff
Operating Parameters
Operating voltage
Tj =-40°C Vbb(on)
Tj =+25°C
Tj =+105°C6)
Tj =+150°C
Overvoltage protection7)
Tj =-40°C: Vbb(AZ)
I bb = 40 mA
Tj =+25...+150°C:
Standby current (pin 3) 8)
Tj=-40...+25°C: Ibb(off)
Tj=+105°C6):
VIN=0 see diagram page 9
Tj=+150°C:
IL(off)
Off-State output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)9), VIN=5 V,
IGND
6)
7)
8)
9)
V
µA
µA
mA
not subject to production test, specified by design
see also VON(CL) in table of protection functions and circuit diagram page 7
Measured with load, typ. 40 µA when no load in off
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Infineon Technologies AG
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BTS 441 R
Parameter and Conditions
Symbol
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Protection Functions10)
Current limit (pin 3 to 5)
(see timing diagrams, page 9)
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams, page 10)
Thermal shutdown time11)12)
Values
min
typ
max
Unit
Tj =-40°C: IL(lim)
Tj =25°C:
=+150°C:
Tj
IL(SCr)
--40
--
-65
-55
85
----
A
Tj,start =25°C: Toff(SC)
--
14
--
ms
41
43
150
---
-47
-10
--
-52
--32
V
°C
K
V
--
540
--
mV
A
(see timing diagram on page 10)
Output clamp (inductive load switch off)
;Tj =-40°C:
Tj=25..150°C: VON(CL)
Thermal overload trip temperature
Tjt
Thermal hysteresis
∆Tjt
Reverse battery (pin 3 to 1) 13)
-Vbb
Reverse battery voltage drop (VOUT > Vbb)
-VON(rev)
IL = -2A
Tj =+150°C:
at VOUT = Vbb - VON(CL), IL= 40 mA
10)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) not subject to production test, specified by design
12) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
13) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 1 and circuit page 7).
Infineon Technologies AG
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2003-Oct-01
BTS 441 R
Parameter and Conditions
Symbol
Values
min
typ
max
at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified
Diagnostic Characteristics
Open load detection voltage14)
V OUT(OL)
2
3
4
V
RI
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
tST delay
2.5
1.2
0.8
-1
4.5
--
3.8
--0.3
-12
--
6.5
2.2
--15
24
500
kΩ
V
V
V
µA
µA
µs
VST(high)
VST(low)
5.4
--
6.1
--
-0.4
V
1
Input and Status Feedback15)
Input resistance
see circuit page 7
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2)
VIN = 0.4 V:
On state input current (pin 2)
VIN = 5 V:
Delay time for status with open load after switch
off
(see timing diagrams, page 11),
Status output (open drain)
Zener limit voltage
IST = +1.6 mA:
ST low voltage
IST = +1.6 mA::
Unit
Truth Table
Normal operation
Open load
Short circuit to Vbb
Overtemperature
L = "Low" Level
H = "High" Level
IN
OUT
ST
L
H
L
H
L
H
Z
H
H
H
L
H
L
H
H
H
L
L
L16)
H
L
H
H
L
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
14)
External pull up resistor required for open load detection in off state
If a ground resistor RGND is used, add the voltage drop across this resistor.
16) L, if potential at the Output exceeds the OpenLoad detection voltage
15)
Infineon Technologies AG
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2003-Oct-01
BTS 441 R
Overvolt. and reverse batt. protection
Terms
V
+ 5V
Ibb
bb
2
V
IN
Vbb
IN
OUT
PROFET
4
R
GND
RI
VON
Z2
Logic
5
R ST ST
ST
GND
1
V
IN
IL
I ST
VST
R ST
Leadframe, 3
I IN
+ Vbb
OUT
V
IGND
PROFET
Z1
GND
VOUT
R GND
Signal GND
R
Load GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 3.5 kΩ typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
Input circuit (ESD protection)
IN
R Load
I
Open-load detection
ESD-ZD I
I
OFF-state diagnostic condition:
Open Load, if VOUT > 3 V typ.; IN low
I
GND
V
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
bb
R
EXT
Status output
OFF
+5V
V
R ST(ON)
ST
Logic
unit
Open load
detection
ESDZD
GND
Signal GND
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
GND disconnect
Inductive and overvoltage output clamp
IN
+ V bb
V
OUT
Vbb
PROFET
Z
OUT
ST
V
GND
ON
V
bb
V
IN
V
ST
V
GND
OUT
GND
PROFET
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
VON clamped to 47 V typ.
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2003-Oct-01
BTS 441 R
Inductive load switch-off energy
dissipation
E bb
GND disconnect with GND pull up
E AS
IN
Vbb
IN
PROFET
ELoad
Vbb
OUT
OUT
PROFET
ST
=
GND
L
ST
GND
V
V
bb
V
IN ST
V
ZL
GND
{
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
EL
ER
L
Energy stored in load inductance:
2
EL = 1/2·L·I L
Vbb disconnect with charged inductive
load
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
high
IN
Vbb
PROFET
with an approximate solution for RL > 0 Ω:
OUT
EAS=
ST
GND
V
IL· L
(V + |VOUT(CL)|)
2·RL bb
ln (1+ |V
IL·RL
OUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
bb
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.
L [mH]
1000
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.
100
10
1
0.1
0
5
10
15
20
25
30
35
IL [A]
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Page 8
2003-Oct-01
BTS 441 R
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mΩ]
40
Tj = 150°C
35
30
25
20
25°C
15
-40°C
10
5
3
5
7
9
30
40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
20
15
10
5
0
-50
0
50
100
150
200
Tj [°C]
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Page 9
2003-Oct-01
BTS 441 R
Timing diagrams
Figure 1a: Vbb turn on:
Figure 2b: Switching a lamp,
IN
IN
V bb
ST
V
OUT
V
I
ST open drain
OUT
L
t
t
proper turn on under all conditions
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN
IN
other channel: normal operation
VOUT
90%
t on
dV/dton
10%
I
dV/dtoff
t
L
I
off
L(lim)
I
L(SCr)
IL
t
ST
t
off(SC)
t
Heating up may require several milliseconds, depending on
external conditions
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BTS 441 R
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
V
OUT
T
J
t
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
IN1
VOUT1
toff
I L1
tST delay
ST
tST delay. = 500µs
Open load detection requires an external pull up
resistor between OUT and VBB
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11
2003-Oct-01
BTS 441 R
Package and Ordering Code
All dimensions in mm
SMD: P-TO263-5-2
(tape&reel)
Sales code
BTS441R G
Ordering code:
Q67060-S6118
10 ±0.2
4.4
9.8 ±0.15
0.05
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
2.7 ±0.3
4.7 ±0.5
8 1)
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
2.4
1.3 ±0.3
1±0.3
8.5 1)
9.25 ±0.2
Attention please!
1.27 ±0.1
B
0.1
A
(15)
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
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Infineon Technologies is an approved CECC manufacturer.
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0.5 ±0.1
4x1.7
Information
8˚ max.
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1)
M
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For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
0.1
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All metal surfaces tin plated, except area of cut.
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Straight: P-TO220-5-12
Sales code
BTS441R S
Ordering code:
Q67060-S6119
1.27 ±0.1
13 ±0.5
11±0.5
0...0.15
0.05
0.5 ±0.1
6x
0.8 ±0.1
1.7
9.25 ±0.2
4.4
2.8 ±0.2
1)
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1)
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Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
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2003-Oct-01