Transistors SMD Type NPN Transistors MMBTA42 (K MBTA42) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● High breakdown voltage 1 0.55 ● Complementary to MMBTA92 (PNP) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● Low collector-emitter saturation voltage 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 350 mW RθJA 357 ℃/W Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector-base breakdown voltage VCBO Ic= 100 μA， IE= 0 300 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 300 Emitter - base breakdown voltage VEBO IE= 100 u A， IC= 0 Collector-base cut-off current ICBO VCB= 200 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 V 5 Collector-emitter saturation voltage VCE(sat) IC= 20 mA, IB= 2mA 0.2 Base - emitter saturation voltage VBE(sat) IC= 20mA, IB= 2mA 0.9 hfe（1） VCE= 10V, IC= 1mA 60 hfe（2） VCE= 10V, IC= 10mA 100 hfe（3） VCE= 10V, IC= 30mA 60 VCE= 20V, IC= 10mA, f=30MHz 50 DC current gain Transition frequency fT Unit uA V 300 MHz ■ Classification of hfe(2) Type MMBTA42 Range 100-300 Marking MMBTA42-L 100-200 1D www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MMBTA42 (K MBTA42) ■ Typical Characterisitics —— V CE IC 18 —— I C COMMON EMITTER Ta=25℃ hFE 80uA 70uA DC CURRENT GAIN (mA) 12 COLLECTOR CURRENT IC 16 14 h FE 1000 90uA 60uA 50uA 10 40uA 8 30uA 6 Ta=100℃ Ta=25℃ 100 20uA 4 IB=10uA COMMON EMITTER VCE=10V 2 0 0 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE V CEsat 18 20 10 0.1 22 V BEsat —— I C 100 I C (mA) —— I C 900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 10 COLLECTOR CURRENT 500 Ta=100 ℃ 100 1 VCE (V) Ta=25℃ Ta=25℃ 600 Ta=100 ℃ β=10 β=10 10 0.1 1 10 COLLECTOR CURREMT IC IC fT 100 (mA) —— I C (MHz) fT 1 0 300 600 900 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 10 0.1 COMMON EMITTER VCE=20V Ta=25℃ 10 0.1 1200 1 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 100 C ob /Cib —— V CB /VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ C (pF) Cib 10 Cob 1 0.1 www.kexin.com.cn 1 REVERSE VOLTAGE V (V) PC 400 f=1MHz IE=0/IC=0 CAPACITANCE IC 300 COMMON EMITTER VCE=10V 2 10 COLLECTOR CURREMT (mA) (mA) IC 1 —— V BE 100 COLLECTOR CURRENT 300 0.1 100 10 20 —— a 10 IC 100 (mA) T 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 125 150