HANBit HMS25632M8B/Z8B HAN SRAM MODULE 1Mbyte (256K x 32-Bit) , 72-Pin BIT Part No. HMS25632M8B, HMS25632Z8B GENERAL DESCRIPTION The HMS25632M8B is a high-speed static random access memory (SRAM) module containing 262,144 words organized in a x32-bit configuration. The module consists of eight 256K x 4 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board. PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. PIN ASSIGNMENT FEATURES Access times : 8, 10,12, 15 and 20ns High-density 1MByte design High-reliability high-speed design Single + 5V ±0.5V power supply Easy memory expansion /CE and /OE functions All inputs and outputs are TTL-compatible Industry-standard pinout FR4-PCB design Part identification NC NC PD2 PD3 Vss PD0 PD1 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 - HMS25632M8B : 72-pin SIMM design - HMS25632Z8B : 72-pin ZIP design → Pin-compatible with the HMS25632M8B OPTIONS MARKING Timing 10ns access -10 12ns access -12 15ns access -15 20ns access -20 Packages 72-pin SIMM M 72-pin ZIP Z 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 /CE4 /CE3 A17 A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 A3 A10 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss NC NC NC NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 PD0 = Vss 72-Pin SIMM PD1 = Vss PD2 = Open TOP VIEW PD3 = Open 1 HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 - A17 32 18 A0-17 A0-17 DQ 0-3 DQ 4-7 /WE /WE U1 /OE U5 /OE /CE /CE /CE1 A0-17 A0-17 DQ 8-11 DQ12-15 /WE /WE U2 /OE U6 /OE /CE /CE /CE2 A0-17 A0-17 DQ16-19 DQ20-23 /WE /WE U3 /OE U7 /OE /CE /CE /CE3 A0-17 A0-17 DQ24-27 /WE /WE /OE /OE DQ28-31 /WE U4 /OE /CE U8 /CE /CE4 MODE /OE /CE /WE OUTPUT POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE 2 HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +7.0V Power Dissipation PD 8W TSTG -65oC to +150oC Voltage on Any Pin Relative to Vss Storage Temperature Operating Temperature TA 0oC to +70oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER * ( TA=0 to 70 o C ) SYMBOL MIN TYP. MAX Supply Voltage VCC 4.5V 5.0V 5.5V Ground VSS 0 0 0 Input High Voltage VIH 2.2 - Vcc+0.5V** Input Low Voltage VIL -0.5* - 0.8V VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER Input Leakage Current Output Leakage Current SYMBO L TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC MIN MAX UNITS ILI -2 2 µA IL0 -2 2 µA 2.4 Output High Voltage IOH = -4.0Ma VOH Output Low Voltage IOL = 8.0mA VOL V 0.4 V * Vcc=5.0V, Temp=25 oC DC AND OPERATING CHARACTERISTICS (2) MAX DESCRIPTION Power Supply Current: Operating Power Supply Current: Standby TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA SYMBOL -12 -15 -20 UNIT ICC 70 68 65 mA Min. Cycle, /CE=VIH ISB 30 30 30 mA f=0MHZ, /CE≥VCC-0.2V, VIN≥ VCC-0.2V or VIN≤0.2V ISB1 5 5 5 mA 3 HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B CAPACITANCE DESCRIPTION TEST CONDITIONS SYMBOL MAX UNIT Input /Output Capacitance VI/O=0V CI/O 8 pF Input Capacitance VIN=0V CIN 6 pF * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) TEST CONDITIONS PARAMETER VALUE Input Pulse Level 0 to 3V Input Rise and Fall Time 3ns Input and Output Timing Reference Levels 1.5V Output Load See below Output Load Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5V +5V 480Ω 480Ω DOUT 255Ω DOUT 30pF* 255Ω 5pF* READ CYCLE -12 PARAMETER -15 -20 SYMBOL UNIT MIN MAX 12 MIN MAX MAX Read Cycle Time tRC Address Access Time tAA 12 15 20 ns Chip Select to Output tCO 12 15 20 ns Output Enable to Output tOE 6 7 9 ns Output Enable to Low-Z Output tOLZ 0 0 0 ns Chip Enable to Low-Z Output tLZ 3 3 3 ns Output Disable to High-Z Output tOHZ 0 6 0 7 0 9 ns Chip Disable to High-Z Output tHZ 0 6 0 7 0 9 ns Output Hold from Address Change tOH 3 3 3 ns Chip Select to Power Up Time tPU - 0 0 ns 4 15 MIN 20 ns HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B Chip Select to Power Down Time tPD - 12 15 20 ns WRITE CYCLE -12 PARAMETER -15 -20 SYMBOL UNIT MIN MAX MIN MAX MIN MAX Write Cycle Time tWC 12 15 20 ns Chip Select to End of Write tCW 8 9 10 ns Address Set-up Time tAS 0 0 0 ns Address Valid to End of Write tAW 8 9 10 ns Write Pulse Width tWP 8 9 10 ns Write Recovery Time tWR 0 0 0 ns Write to Output High-Z tWHZ 0 Data to Write Time Overlap tDW 6 7 8 ns Data Hold from Write Time tDH 0 0 0 ns End of Write to Output Low-Z tOW 3 3 5 ns 6 0 7 0 9 TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE( Address Controlled) ( /CE = /OE = VIL , /WE = VIH) tRC Address tAA tOH Data out Previous Data Valid Data Valid 5 HANBit Electronics Co.,Ltd. ns HANBit HMS25632M8B/Z8B TIMING WAVEFORM OF READ CYCLE ( /CE Controlled ) tRC Address tHZ(3,4,5) tAA tCO /CE tLZ(4,5) tOHZ tOE /OE tOH tOLZ Data Out Vcc Supply Current High-Z Data Valid tPD tPU lCC 50% 50% lSB Notes (Read Cycle) 1. /WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device to device. 5. Transition is measured ± 200mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with /CE = VIL. 7. Address valid prior to coincident with /CE transition low. TIMING WAVEFORM OF WRITE CYCLE (/OE = Clock ) tWC Address tAW tWR(5) /OE tCW(3) /CE tAS(4) tWP(2) /WE tDW Data In tDH High-Z Data Valid tOHZ(6) Data Out High-Z 6 HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B TIMING WAVEFORM OF WRITE CYCLE (/OE Low Fixed ) tWC Address tAW tWR(5) tCW(3) /CE tAS(4) tOH /WE tWP(2) tDW tDH High-Z Data In tWHZ(6,7) tOW (10) (9) High-Z(8) Data Out Notes(Write Cycle) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low /CE and a low /WE. A write begins at the latest transition among /CE going low and /WE going low : A write ends at the earliest transition among /CE going high and /WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of /CE going low to the end of write. 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. t WR applied in case a write ends as /CE, or /WE going high. 6. If /OE,/CE and /WE are in the read mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain high impedance state. 9. DOUT is the read data of the new address. 10. When /CE is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z l SB, l SB1 L H H Output Disable High-Z lCC L H L Read DOUT lCC L L X Write DIN lCC Note: X means Don't Care 7 HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B PACKAGING DIMMENSIONS SIMM Design 108.20 mm 3.18 mm TYP(2x) 16 mm 6.35 mm 1 72 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08 mm Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm (Solder & Gold Plating Lead) ZIP Design 96.5 mm CUT 1.5 mm 19 mm 72 1 6 mm 46 mm 2.54 mm 1 mm 1 mm 97.79 mm 1.29±0.08 mm 2.5 mm 8 HANBit Electronics Co.,Ltd. HANBit HMS25632M8B/Z8B ORDERING INFORMATION 1 2 3 HMS 4 5 6 7 8 256 32 M8B -15 15ns Access Time HANBit Component, 72PIN Memory Modules SIMM x32bit SRAM 256K 1. - Product Line Identifier HANBit ------------------------------------------------------- H 2. - Memory Modules 3. - SRAM 4. - Depth : 256K 5. - Width : x 32bit 6. - Package Code SIMM ------------------------------------------------------- M ZIP ------------------------------------------------------- Z 7. - Number of Memory Components, 72PIN 8. - Access time 10 ----------------------------------------------------------- 10ns 12 ----------------------------------------------------------- 12ns 15 ----------------------------------------------------------- 15ns 17 ----------------------------------------------------------- 17ns 20 ----------------------------------------------------------- 20ns 9 HANBit Electronics Co.,Ltd.