Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class IXFN80N50Q2 VDSS = 500V ID25 = 80A Ω RDS(on) ≤ 60mΩ ≤ 250ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 80 320 A A IA TC = 25°C 80 A EAS TC = 25°C 5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ 1.5/13 1.3/ 11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 5.5 V ±200 nA TJ = 125°C 100 5 μA mA VGS = 10V, ID = 0.5 • ID25, Note 1 60 mΩ © 2008 IXYS Corporation, All rights reserved S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features z Double metal process for low gate resistance z miniBLOC, with Aluminium nitride isolation z Unclamped Inductive Switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Applications DC-DC converters z Switched-mode and resonant-mode power supplies z DC choppers z Pulse generators z Advantages z Easy to mount z Space savings z High power density DS99031B(05/08) IXFN80N50Q2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 40 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf S 12.8 nF pF 440 pF 29 ns 25 ns 60 ns 11 ns 250 nC 60 nC 120 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 55 1640 Crss td(on) SOT-227B Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.14 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 80 A Repetitive, pulse width limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/μs μC A 1.2 12 VR= 100V, VGS = 0V Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN80N50Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 80 200 VGS = 10V 70 VGS = 10V 180 8V 8V 160 140 7V I D - Amperes I D - Amperes 60 50 40 6V 30 120 100 7V 80 60 20 6V 40 10 20 5V 5V 0 0 0 1 2 3 VD S 4 5 0 6 2 4 6 8 VD - Volts Fig. 3. Output Characteristics @ 125ºC 10 S 12 14 16 18 20 - Volts Fig. 4. RDS(on) Normalized to I D = 40A Value vs. Junction Temperature 80 3.2 VGS = 10V 70 7V R D S ( o n ) - Normalized I D - Amperes 60 50 6V 40 30 20 10 2.4 2.0 ID = 80A ID = 40A 1.6 1.2 0.8 5V 0 0.4 0 2 4 6 VD S 8 10 12 -50 -25 0 - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 40A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 3.0 External Lead Current Limit 80 VGS = 10V 2.6 TJ = 125ºC 2.2 70 I D - Amperes R D S ( o n ) - Normalized VGS = 10V 2.8 1.8 1.4 TJ = 25ºC 60 50 40 30 20 1.0 10 0.6 0 0 20 40 60 80 I D 100 120 140 160 180 200 - Amperes © 2008 IXYS Corporation, All rights reserved -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFN80N50Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 140 120 120 100 TJ = - 40ºC g f s - Siemens I D - Amperes 100 TJ = 125ºC 25ºC - 40ºC 80 60 80 25ºC 60 125ºC 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage D 100 120 140 160 180 - Amperes Fig. 10. Gate Charge 10 240 VDS = 250V 9 200 ID = 40A 8 TJ = 25ºC 160 IG = 10m A 7 TJ = 125ºC VG S - Volts I S - Amperes 80 I 120 80 6 5 4 3 2 40 1 0 0 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 40 80 Q V S D - Volts 120 G 160 200 240 280 - nanoCoulombs Fig. 12. M aximum Transie nt The rmal Impe dance Fig. 11. Capacitance 1 100000 - ºC / W Ciss 0.1 JC 10000 Coss Z( t h ) Capacitance - pF f = 1MHz 1000 0.01 Crss 0.001 100 0 5 10 15 VD 20 S 25 30 35 40 - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_80N50Q2(95) 05-28-08-G