IXYS IXFN80N50Q2 Hiperfet power mosfet q2-class Datasheet

Preliminary Technical Information
HiPerFETTM
Power MOSFET
Q2-Class
IXFN80N50Q2
VDSS = 500V
ID25 = 80A
Ω
RDS(on) ≤ 60mΩ
≤ 250ns
trr
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
80
320
A
A
IA
TC = 25°C
80
A
EAS
TC = 25°C
5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
890
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
3000
V~
V~
1.5/13
1.3/ 11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
TL
1.6mm (0.062 in.) from case for 10s
VISOL
50/60Hz, RMS
IISOL ≤ 1mA
Md
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
V
5.5
V
±200
nA
TJ = 125°C
100
5
μA
mA
VGS = 10V, ID = 0.5 • ID25, Note 1
60
mΩ
© 2008 IXYS Corporation, All rights reserved
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z
Double metal process for low
gate resistance
z
miniBLOC, with Aluminium nitride
isolation
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
z
Fast intrinsic Rectifier
Applications
DC-DC converters
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
Pulse generators
z
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99031B(05/08)
IXFN80N50Q2
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 0.5 • ID25, Note 1
40
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
tr
td(off)
tf
S
12.8
nF
pF
440
pF
29
ns
25
ns
60
ns
11
ns
250
nC
60
nC
120
nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
55
1640
Crss
td(on)
SOT-227B Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.14 °C/W
RthJC
RthCS
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Characteristic Values
Min.
Typ.
Max.
80
A
Repetitive, pulse width limited by TJM
320
A
IF = IS, VGS = 0V, Note 1
1.5
V
250
ns
IF = 25A, -di/dt = 100A/μs
μC
A
1.2
12
VR= 100V, VGS = 0V
Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN80N50Q2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
80
200
VGS = 10V
70
VGS = 10V
180
8V
8V
160
140
7V
I D - Amperes
I D - Amperes
60
50
40
6V
30
120
100
7V
80
60
20
6V
40
10
20
5V
5V
0
0
0
1
2
3
VD
S
4
5
0
6
2
4
6
8
VD
- Volts
Fig. 3. Output Characteristics
@ 125ºC
10
S
12
14
16
18
20
- Volts
Fig. 4. RDS(on) Normalized to I D = 40A Value
vs. Junction Temperature
80
3.2
VGS = 10V
70
7V
R D S ( o n ) - Normalized
I D - Amperes
60
50
6V
40
30
20
10
2.4
2.0
ID = 80A
ID = 40A
1.6
1.2
0.8
5V
0
0.4
0
2
4
6
VD
S
8
10
12
-50
-25
0
- Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D = 40A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
3.0
External Lead Current Limit
80
VGS = 10V
2.6
TJ = 125ºC
2.2
70
I D - Amperes
R D S ( o n ) - Normalized
VGS = 10V
2.8
1.8
1.4
TJ = 25ºC
60
50
40
30
20
1.0
10
0.6
0
0
20
40
60
80
I
D
100 120 140 160 180 200
- Amperes
© 2008 IXYS Corporation, All rights reserved
-50
-25
0
25
50
75
100
T C - Degrees Centigrade
125
150
IXFN80N50Q2
Fig. 7. Input Admittance
Fig. 8. Transconductance
140
120
120
100
TJ = - 40ºC
g f s - Siemens
I D - Amperes
100
TJ = 125ºC
25ºC
- 40ºC
80
60
80
25ºC
60
125ºC
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
20
40
60
V G S - Volts
Fig. 9. Source Current vs. Source-To-Drain
Voltage
D
100
120 140
160
180
- Amperes
Fig. 10. Gate Charge
10
240
VDS = 250V
9
200
ID = 40A
8
TJ = 25ºC
160
IG = 10m A
7
TJ = 125ºC
VG S - Volts
I S - Amperes
80
I
120
80
6
5
4
3
2
40
1
0
0
0.4
0.6
0.8
1.0
1.2
1.4
0
1.6
40
80
Q
V S D - Volts
120
G
160
200
240
280
- nanoCoulombs
Fig. 12. M aximum Transie nt The rmal
Impe dance
Fig. 11. Capacitance
1
100000
- ºC / W
Ciss
0.1
JC
10000
Coss
Z( t h )
Capacitance - pF
f = 1MHz
1000
0.01
Crss
0.001
100
0
5
10
15
VD
20
S
25
30
35
40
- Volts
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_80N50Q2(95) 05-28-08-G
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