Diotec BCX71K Surface mount si-epitaxial planartransistor Datasheet

BCX 71
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
PNP
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCX 71
Collector-Emitter-voltage
B open
- VCE0
45 V
Collector-Base-voltage
E open
- VCB0
45 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (DC)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V
- ICB0
–
–
20 nA
IE = 0, - VCB = 32 V, Tj = 150/C
- ICB0
–
–
20 :A
- IEB0
–
–
20 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
2
Collector saturation volt. – Kollektor-Sättigungsspg. )
1
- IC = 10 mA, - IB = 0.25 mA
- VCEsat
60 mV
–
250 mV
- IC = 50 mA, - IB = 1.25 mA
- VCEsat
120 mV
–
550 mV
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
58
01.11.2003
General Purpose Transistors
BCX 71
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.25 mA
- VBEsat
600 mV
–
850 mV
- IC = 50 mA, - IB = 1.25 mA
- VBEsat
700 mV
–
1050 mV
1
DC current gain – Kollektor-Basis-Stromverhältnis )
- VCE = 5 V, - IC = 10 :A
- VCE = 5 V, - IC = 2 mA
- VCE = 1 V, - IC = 50 mA
BCX 71G
hFE
–
–
–
BCX 71H
hFE
30
–
–
BCX 71J
hFE
40
–
–
BCX 71K
hFE
100
–
–
BCX 71G
hFE
120
–
220
BCX 71H
hFE
180
–
310
BCX 71J
hFE
250
–
460
BCX 71K
hFE
380
–
630
BCX 71G
hFE
60
–
–
BCX 71H
hFE
80
–
–
BCX 71J
hFE
100
–
–
hFE
110
–
–
BCX 71K
1
Base-Emitter voltage – Basis-Emitter-Spannung )
- VCE = 5 V, - IC = 10 :A
- VBEon
–
550 mV
–
- VCE = 5 V, - IC = 2 mA
- VBEon
600 mV
650 mV
750 mV
- VCE = 1 V, - IC = 50 mA
- VBEon
–
720 mV
–
100 MHz
–
–
–
4.5 pF
–
CEB0
–
11 pF
–
F
–
2 dB
6 dB
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking
Stempelung
BCX 71G = BG
BCX 71H = BH
420 K/W 2)
RthA
BCX 70 series
BCX 71J = BJ
BCX 71K = BK
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
59
Similar pages