Intel E28F016SV-080 16-mbit (1 mbit x 16, 2 mbit x 8) flashfile memory Datasheet

E
28F016SV
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
FlashFile™ MEMORY
Includes Commercial and Extended Temperature Specifications
n
n
n
n
n
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n
SmartVoltage Technology
 User-Selectable 3.3V or 5V V CC
 User-Selectable 5V or 12V V PP
65 ns Access Time
n
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1 Million Erase Cycles per Block
30.8 MB/sec Burst Write Transfer Rate
0.48 MB/sec Sustainable Write Transfer
Rate
Configurable x8 or x16 Operation
56-Lead TSOP and SSOP Type I
Packages
n
n
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Backwards-Compatible with 28F016SA,
28F008SA Command Set
Revolutionary Architecture
 Multiple Command Execution
 Program during Erase
 Command Super-Set of the Intel
28F008SA
 Page Buffer Program
2 µA Typical Deep Power-Down
32 Independently Lockable Blocks
State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the
28F016SV enables the design of truly mobile, high-performance personal computing and communications
products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and
28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage
technology), fast program and read performance and selective block locking, provide a highly-flexible memory
component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V
and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor
interface. The flexible block locking option enables bundling of executable application software in a Resident
Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 µm ETOX IV process technology.
July 1997
Order Number: 290528-007
7/11/97 11:03 AM
29052807.DOC
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F016SV may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
or visit Intel’s Website at http:\\www.intel.com
COPYRIGHT © INTEL CORPORATION, 1997
*Third-party brands and names are the property of their respective owners.
CG-041493
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28F016SV FlashFile™ MEMORY
CONTENTS
PAGE
1.0 INTRODUCTION .............................................7
1.1 Enhanced Features......................................7
1.2 Product Overview.........................................7
2.0 DEVICE PINOUT.............................................9
2.1 Lead Descriptions ......................................11
3.0 MEMORY MAPS ...........................................15
3.1 Extended Status Registers Memory Map ...16
4.0 BUS OPERATIONS, COMMANDS AND
STATUS REGISTER DEFINITIONS ................17
4.1 Bus Operations for Word-Wide Mode
(BYTE# = VIH) ..............................................17
4.2 Bus Operations for Byte-Wide Mode
(BYTE# = VIL)...............................................17
4.3 28F008SA—Compatible Mode Command
Bus Definitions .............................................18
4.4 28F016SV—Performance Enhancement
Command Bus Definitions ............................19
4.5 Compatible Status Register........................21
4.6 Global Status Register ...............................22
4.7 Block Status Register.................................23
4.8 Device Configuration Code.........................24
PAGE
5.0 ELECTRICAL SPECIFICATIONS..................25
5.1 Absolute Maximum Ratings ........................25
5.2 Capacitance ...............................................26
5.3 DC Characteristics (VCC = 3.3V ± 0.3V) .....29
5.4 DC Characteristics (VCC = 5V ± 0.5V)
5V ± 0.25V) ..................................................33
5.5 Timing Nomenclature .................................37
5.6 AC Characteristics—Read Only Operations38
5.7 Power-Up and Reset Timings.....................43
5.8 AC Characteristics for WE#—Controlled
Command Write Operations .........................44
5.9 AC Characteristics for CE#—Controlled
Command Write Operations ) ........................49
5.10 AC Characteristics for WE#—Controlled
Page Buffer Program Operations..................54
5.11 AC Characteristics for CE#—Controlled
Page Buffer Program Operations..................56
5.12 Erase and Word/Byte Program
Performance.................................................58
6.0 MECHANICAL SPECIFICATIONS.................60
APPENDIX A: Device Nomenclature and
Ordering Information .....................................61
APPENDIX B: Ordering Information .................63
3
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28F016SV FlashFile™ MEMORY
REVISION HISTORY
Number
-001
Original Version
-002
Added 28F016SV-065/-070 at 5V VCC and 28F016SV-075 at 3.3V VCC.
Improved burst write transfer rate to 30.8 MB/sec.
Added 56-lead SSOP Type I packaging information.
Changed VPPLK from 2V to 1.5V.
Increased ICCR at 5V VCC and 3.3V VCC:
ICCR1 from 30 mA (typ)/35 mA (max) to 40 mA (typ)/50 mA (max) @ V CC = 3.3V
ICCR2 from 15 mA (typ)/20 mA (max) to 20 mA (typ)/30 mA (max) @ V CC = 3.3V
ICCR1 from 50 mA (typ)/60 mA (max) to 75 mA (typ)/95 mA (max) @ V CC = 5V
ICCR2 from 30 mA (typ)/35 mA (max) to 45 mA (typ)/55 mA (max) @ V CC = 5V
Moved AC Characteristics for Extended Register Reads into separate table.
Increased VPP MAX from 13V to 14V.
Added Erase Suspend Command Latency times to Section 5.12
Modified Device Nomenclature Section to include SSOP package option and Ordering
Information
Changed definition of “NC.” Removed “No internal connection to die” from description.
Added “xx” to Upper Byte of Command (Data) Definition in Sections 4.3 and 4.4.
Added Note to Sleep Command (Section 4.4) denoting that the chip must be de-selected
in order for the power consumption in sleep mode to reach deep power-down
levels.
Modified parameters “V” and “I” of Section 5.1 to apply to “NC” pins.
Increased IPPR (VPP Read Current) for VPP> VCC to 200 µA at VCC = 3.3V and VCC = 5V
Changed VCC = 5V DC Characteristics (Section 5.5) marked with Note 1 to indicate
that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns
and a TTL rise/fall time of <10 ns.
Corrected the graphical representation of tWHGL and tEHGL in Figures 15 and 16.
Increased Typical “Page Buffer Byte/Word Program Times” from 6.0 µs to 8.0 µs (Byte)
and 12.1 µs to 16.0 µs (Word) @ VCC = 3.3V/5V and VPP = 5V:
Increased Typ. “Byte/Word Program Times” (tWHRH1A/tWHRH1B) for VPP = 5V (Section
5.12)
tWHRH1A from 16.5 µs to 29.0 µs and t WHRH1B from 24.0 µs to 35.0 µs at V CC =3.3V
tWHRH1A from 11.0 µs to 20.0 µs and t WHRH1B from 16.0 µs to 25.0 µs at V CC = 5V
Increased Typical “Block Program Times” (t WHRH2/tWHRH3)for VPP =5V (Section 5.12):
t WHRH2 from 1.1 sec to 1.9 sec and t WHRH3 from 0.8 sec to 1.2 sec at V CC = 3.3V
t WHRH2 from 0.8 sec to 1.4 sec and t WHRH3 from 0.6 sec to 0.85 sec at V CC = 5V
Changed “Time from Erase Suspend Command to WSM Ready” spec name to “Erase
Suspend Latency Time to Read;” modified typical values and added Min/Max
values at VCC =3.3/5V and VPP =5V/12V (Section 5.12)
Added “Erase Suspend Latency Time to Program” Specifications to Section 5.12
Minor cosmetic changes throughout document
-003
4
Description
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28F016SV FlashFile™ MEMORY
REVISION HISTORY (Continued)
Number
Description
-004
Added 3/5# pin to Block Diagram (Figure 1), Pinout Configurations (Figures 2 and 3),
Product Overview (Section 1.1) and Lead Descriptions (Section 2.1)
Added 3/5# pin to Test Conditions of ICCS Specifications
Added 3/5# pin (Y) to Timing Nomenclature (Section 5.5)
Increased tPHQV Specifications at 5V VCC to 400 ns for E28F016SV 065 devices
and 480 ns for E28F106SV 070 devices.
Modified Power-Up and Reset Timings (Section 5.9) to include 3/5# pin: Removed t5VPH
and t3VPH specifications; Added t PLYL, tPLYH, tYLPH, and tYHPH specifications
Added tPHEL3 and tPHEL5 specifications to Power-Up and Reset Timings (Section 5.9)
Corrected TSOP Mechanical Specification A 1 from 0.50 mm to 0.050 mm (Section 6.0)
Corrected SSOP Mechanical Spec. B (max) from 0.20 mm to 0.40 mm (Section 6.0)
Minor cosmetic changes throughout document.
-005
Updated DC Specifications: ICCD, IPPES
Updated AC Specifications: Page Buffer Reads: (t AVAV, tAVQV, tELQV, and tFLQV/tFHQV)
Page Buffer WE#-Controlled Command Writes (tELWL)
CE#-Controlled Command Write Parameters (tAVAV, tELEH, tEHEL)
Combined Commercial and Extended Temperature information into single datasheet.
-006
Updated AC Specifications: Page Buffer Reads: (t AVAV, tAVQV, tELQV, and tFLQV/tFHQV)
-007
Updated Disclaimer
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28F016SV FlashFile™ MEMORY
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6
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1.0 INTRODUCTION
The documentation of the Intel 28F016SV memory
device includes this datasheet, a detailed user’s
manual, and a number of application notes and
design tools, all of which are referenced in
Appendix B.
The datasheet is intended to give an overview of
the chip feature-set and of the operating AC/DC
specifications. The 16-Mbit Flash Product Family
User’s Manual provides complete descriptions of
the user modes, system interface examples and
detailed descriptions of all principles of operation.
It also contains the full list of software algorithm
flowcharts, and a brief section on compatibility
with the Intel 28F008SA.
A significant 28F016SV change occurred between
datasheet revisions 290528-003 and 290528-004.
This change centers around the addition of a 3/5#
pin to the device’s pinout configuration. Figures 2
and 3 show the 3/5# pin assignment for TSOP and
SSOP Type 1 packages. Intel recommends that all
customers obtain the latest revisions of 28F016SV
documentation.
1.1 Enhanced Features
The 28F016SV is backwards compatible with the
28F016SA and offers the following enhancements:
• SmartVoltage Technology
 Selectable 5V or 12V VPP
• VPP Level Bit in Block Status Register
• Additional RY/BY# Configuration
 Pulse-On-Program/Erase
• Additional Upload Device Information
Command Feedback
 Device Proliferation Code
 Device Configuration Code
28F016SV FlashFile™ MEMORY
The implementation of a new architecture, with
many enhanced features, will improve the device
operating characteristics and result in greater
product reliability and ease-of-use.
The 28F016SV
incorporates
SmartVoltage
technology, providing VCC operation at both 3.3V
and 5V and program and erase capability at VPP =
12V or 5V. Operating at VCC = 3.3V, the
28F016SV consumes approximately one half the
power consumption at 5V VCC, while 5V VCC
provides the highest read performance capability.
VPP = 5V operation eliminates the need for a
separate 12V converter, while VPP = 12V
maximizes
program/erase
performance.
In
addition to the flexible program and erase
voltages, the dedicated VPP gives complete code
protection with VPP ≤ VPPLK.
A 3/5# input pin configures the device’s internal
circuitry for optimal 3.3V or 5V read/program
operation.
A Command User Interface (CUI) serves as the
system interface between the microprocessor or
microcontroller and the internal memory operation.
Internal Algorithm Automation allows byte/word
programs and block erase operations to be
executed using a Two-Program command
sequence to the CUI in the same way as the
28F008SA 8-Mbit FlashFile™ memory.
A super-set of commands has been added to the
basic 28F008SA command-set to achieve higher
program performance and provide additional
capabilities. These new commands and features
include:
• Page Buffer Programs to Flash
• Command Queuing Capability
• Automatic Data Programs during Erase
• Software Locking of Memory Blocks
• Two-Byte
Systems
Successive
Programs
in
8-bit
1.2 Product Overview
• Erase All Unlocked Blocks
The 28F016SV is a high-performance, 16-Mbit
(16,777,216-bit) block erasable, nonvolatile
random access memory, organized as either
1 Mword x 16 or 2 Mbyte x 8. The 28F016SV
includes thirty-two 64-KB (65,536 byte) blocks or
thirty-two 32-KW (32,768 word) blocks. A chip
memory map is shown in Figure 4.
Writing of memory data is performed in either byte
or word increments typically within 6 µs
(12V VPP)—a 33% improvement over the
28F008SA. A block erase operation erases one of
the 32 blocks in typically 0.6 sec (12V VPP),
independent of the other blocks, which is about a
65% improvement over the 28F008SA.
7
28F016SV FlashFile™ MEMORY
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Each block can be written and erased a minimum
of 100,000 cycles. Systems can achieve one
million Block Erase Cycles by providing wearleveling algorithms and graceful block retirement.
These techniques have already been employed in
many flash file systems and hard disk drive
designs.
• 32 Block Status Registers (BSRs) which
provide block-specific status information such
as the block lock-bit status.
The 28F016SV incorporates two Page Buffers of
256 bytes (128 words) each to allow page data
programs. This feature can improve a system
program performance by up to 4.8 times over
previous flash memory devices, which have no
Page Buffers.
The 28F016SV incorporates an open drain
RY/BY# output pin. This feature allows the user to
OR-tie many RY/BY# pins together in a multiple
memory configuration such as a Resident Flash
Array.
All operations are started by a sequence of
Program commands to the device. Three Status
Registers (described in detail later in this
datasheet) and a RY/BY# output pin provide
information on the progress of the requested
operation.
While the 28F008SA requires an operation to
complete before the next operation can be
requested, the 28F016SV allows queuing of the
next operation while the memory executes the
current operation. This eliminates system
overhead when writing several bytes in a row to
the array or erasing several blocks at the same
time. The 28F016SV can also perform program
operations to one block of memory while
performing erase of another block.
The 28F016SV provides selectable block locking
to protect code or data such as Device Drivers,
PCMCIA card information, ROM-Executable O/S
or Application Code. Each block has an
associated nonvolatile lock-bit which determines
the lock status of the block. In addition, the
28F016SV has a master Write Protect pin (WP#)
which prevents any modifications to memory
blocks whose lock-bits are set.
The 28F016SV contains three types of Status
Registers to accomplish various functions:
• A Compatible Status Register (CSR) which is
100% compatible with the 28F008SA FlashFile
memory Status Register. The CSR, when used
alone, provides a straightforward upgrade
capability to the 28F016SV from a 28F008SAbased design.
• A Global Status Register (GSR) which informs
the system of command Queue status, Page
Buffer status, and overall Write State Machine
(WSM) status.
8
The GSR and BSR memory maps for byte-wide
and word-wide modes are shown in Figures 5
and 6.
Other configurations of the RY/BY# pin are
enabled via special CUI commands and are
described in detail in the 16-Mbit Flash Product
Family User’s Manual.
The 28F016SV’s enhanced Upload Device
Information command provides access to
additional information that the 28F016SA
previously did not offer. This command uploads
the Device Revision Number, Device Proliferation
Code and Device Configuration Code to the page
buffer. The Device Proliferation Code for the
28F016SV is 01H, and the Device Configuration
Code identifies the current RY/BY# configuration.
Section 4.4 documents the exact page buffer
address locations for all uploaded information. A
subsequent Page Buffer Swap and Page Buffer
Read command sequence is necessary to read
the correct device information.
The 28F016SV also incorporates a dual chipenable function with two input pins, CE0# and
CE1#. These pins have exactly the same
functionality as the regular chip-enable pin, CE#,
on the 28F008SA. For minimum chip designs,
CE1# may be tied to ground and system logic may
use CE0# as the chip enable input. The 28F016SV
uses the logical combination of these two signals
to enable or disable the entire chip. Both CE0# and
CE1# must be active low to enable the device. If
either one becomes inactive, the chip will be
disabled. This feature, along with the open drain
RY/BY# pin, allows the system designer to reduce
the number of control pins used in a large array of
16-Mbit devices.
The BYTE# pin allows either x8 or x16
read/programs to the 28F016SV. BYTE# at logic
low selects 8-bit mode with address A0 selecting
between the low byte and high byte. On the other
hand, BYTE# at logic high enables 16-bit
operation with address A1 becoming the lowest
E
order address and address A0 is not used (don’t
care). A device block diagram is shown in Figure
1.
The 28F016SV is specified for a maximum access
time of 65 ns (tACC) at 5V operation (4.75V to
5.25V) over the commercial temperature range
(0°C to +70°C). A corresponding maximum access
time of 75 ns at 3.3V (3.0V to 3.6V and 0°C to
+70°C) is achieved for reduced power
consumption applications.
The 28F016SV incorporates an Automatic Power
Saving (APS) feature, which substantially reduces
the active current when the device is in static
mode of operation (addresses not switching). In
APS mode, the typical ICC current is 1 mA at 5V
(3.0 mA at 3.3V).
A deep power-down mode of operation is invoked
when the RP# (called PWD# on the 28F008SA)
pin transitions low. This mode brings the device
power consumption to less than 2.0 µA, typically,
and provides additional program protection by
acting as a device reset pin during power
transitions. A reset time of 400 ns (5V VCC
28F016SV FlashFile™ MEMORY
operation) is required from RP# switching high
until outputs are again valid. In the Deep PowerDown state, the WSM is reset (any current
operation will abort) and the CSR, GSR and BSR
registers are cleared.
A CMOS standby mode of operation is enabled
when either CE0# or CE1# transitions high and
RP# stays high with all input control pins at CMOS
levels. In this mode, the device typically draws an
ICC standby current of 70 µA at 5V V CC.
The 28F016SV will be available in 56-lead,
1.2 mm thick, 14 mm x 20 mm TSOP and 56-lead,
1.8 mm thick, 16 mm x 23.7 SSOP Type I
packages. The form factor and pinout of these two
packages allow for very high board layout
densities.
2.0 DEVICE PINOUT
The 28F016SV 56-lead TSOP and 56-lead SSOP
Type I pinout configurations are shown in Figures
2 and 3.
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28F016SV FlashFile™ MEMORY
DQ
DQ
8-15
Output
Buffer
0-7
Output
Buffer
Input
Buffer
Input
Buffer
3/5#
I/O Logic
BYTE#
Data
Queue
Registers
Output Multiplexer
ID
Register
CSR
Page
Buffers
CE0#
ESRs
CE1 #
CUI
0-20
OE#
A
Data
Comparator
WE#
WP#
Input
Buffer
RP#
Y
Decoder
Y Gating/Sensing
WSM
64-Kbyte
Block 31
64-Kbyte
Block 30
64-Kbyte
Block 1
X
Decoder
64-Kbyte
Block 0
RY/BY#
Address
Queue
Registers
Program/Erase
Voltage Switch
V PP
3/5#
VCC
Address
Counter
GND
0528_01
Figure 1. 28F016SV Block Diagram
Architectural Evolution Includes SmartVoltage Technology,
Page Buffers, Queue Registers and Extended Registers
10
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28F016SV FlashFile™ MEMORY
2.1 Lead Descriptions
Symbol
A0
Type
Name and Function
INPUT
BYTE-SELECT ADDRESS: Selects between high and low byte when
device is in x8 mode. This address is latched in x8 data programs. Not
used in x16 mode (i.e., the A 0 input buffer is turned off when BYTE# is
high).
A1–A15
INPUT
WORD-SELECT ADDRESSES: Select a word within one 64-Kbyte block.
A6–15 selects 1 of 1024 rows, and A 1–5 selects 16 of 512 columns. These
addresses are latched during data programs.
A16–A20
INPUT
BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These
addresses are latched during data programs, erase and lock block
operations.
DQ0–DQ7
INPUT/OUTPUT LOW-BYTE DATA BUS: Inputs data and commands during CUI program
cycles. Outputs array, buffer, identifier or status data in the appropriate
read mode. Floated when the chip is de-selected or the outputs are
disabled.
DQ8–DQ15 INPUT/OUTPUT HIGH-BYTE DATA BUS: Inputs data during x16 data program
operations. Outputs array, buffer or identifier data in the appropriate read
mode; not used for Status Register reads. Floated when the chip is deselected or the outputs are disabled.
CE0#, CE1#
INPUT
CHIP ENABLE INPUTS: Activate the device’s control logic, input buffers,
decoders and sense amplifiers. With either CE0# or CE1# high, the device
is de-selected and power consumption reduces to standby levels upon
completion of any current data program or erase operations. Both CE0#
and CE1# must be low to select the device.
All timing specifications are the same for both signals. Device Selection
occurs with the latter falling edge of CE 0# or CE1#. The first rising edge of
CE0# or CE1# disables the device.
RP#
INPUT
RESET/POWER-DOWN: RP# low places the device in a deep powerdown state. All circuits that consume static power, even those circuits
enabled in standby mode, are turned off. When returning from deep
power-down, a recovery time of tPHQV is required to allow these circuits to
power-up.
When RP# goes low, any current or pending WSM operation(s) are
terminated, and the device is reset. All Status Registers return to ready
(with all status flags cleared).
Exit from deep power-down places the device in read array mode.
OE#
INPUT
OUTPUT ENABLE: Gates device data through the output buffers when
low. The outputs float to tri-state off when OE# is high.
NOTE:
CEx# overrides OE#, and OE# overrides WE#.
WE#
INPUT
WRITE ENABLE: Controls access to the CUI, Page Buffers, Data Queue
Registers and Address Queue Latches. WE# is active low, and latches
both address and data (command or array) on its rising edge.
Page Buffer addresses are latched on the falling edge of WE#.
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28F016SV FlashFile™ MEMORY
2.1 Lead Descriptions (Continued)
Symbol
RY/BY#
Type
Name and Function
OPEN DRAIN
OUTPUT
READY/BUSY: Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# floating
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or erase is suspended, or the device is
in deep power-down mode. This output is always active (i.e., not floated
to tri-state off when OE# or CE0#, CE1# are high), except if a RY/BY# Pin
Disable command is issued.
WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or erases. When WP# is high, all blocks can
be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE ENABLE: BYTE# low places device in x8 mode. All data is then
input or output on DQ0–7, and DQ8–15 float. Address A 0 selects between
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A0 input buffer. Address A1, then becomes the lowest order
address.
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5V operation.
NOTE:
Reading the array with 3/5# high in a 5V system could damage the
device. Reference the power-up and reset timings (Section 5.7) for 3/5#
switching delay to valid data.
PROGRAM/ERASE POWER SUPPLY (12V ± 0.6V, 5V ± 0.5V) : For
erasing memory array blocks or writing words/bytes/pages into the flash
array. VPP = 5V ± 0.5V eliminates the need for a 12V converter, while
connection to 12V ± 0.6V maximizes Program/Erase Performance.
NOTE:
Successful completion of program and erase attempts is inhibited with
VPP at or below 1.5V. Program and erase attempts with VPP between 1.5V
and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious
results and should not be attempted.
DEVICE POWER SUPPLY (3.3V ± 0.3V, 5V ± 0.5V, 5.0 ± 0.25V):
To switch 3.3V to 5V (or vice versa), first ramp V CC down to GND, and
then power to the new VCC voltage.
Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NO CONNECT:
Lead may be driven or left floating.
WP#
INPUT
BYTE#
INPUT
3/5#
INPUT
VPP
SUPPLY
VCC
SUPPLY
GND
SUPPLY
NC
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28F016SV FlashFile™ MEMORY
28F016SA 28F032SA
28F032SA 28F016SA
3/5#
CE1 #
CE2 #
A 20
A 19
A 18
A 17
A 16
V CC
A 15
A 14
A 13
A 12
CE 0#
V PP
RP#
A 11
A 10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
3/5#
CE 1 #
NC
A 20
A 19
A 18
A 17
A 16
V CC
A 15
A 14
A 13
A 12
CE 0#
V PP
RP#
A 11
A 10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
3/5#
CE1 #
NC
A 20
A 19
A 18
A 17
A 16
V CC
A 15
A 14
A 13
A 12
CE 0#
V PP
RP#
A 11
A 10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
E28F016SV
56-LEAD TSOP PINOUT
14 mm x 20 mm
TOP VIEW
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
WP#
WE#
OE#
RY/BY#
DQ15
DQ 7
DQ 14
DQ 6
GND
DQ 13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ 3
DQ 10
DQ 2
VCC
DQ 9
DQ 1
DQ 8
DQ 0
A0
BYTE#
NC
NC
WP#
WE#
OE#
RY/BY#
DQ15
DQ 7
DQ 14
DQ 6
GND
DQ 13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ 3
DQ 10
DQ 2
VCC
DQ 9
DQ 1
DQ 8
DQ 0
A0
BYTE#
NC
NC
WP#
WE#
OE#
RY/BY#
DQ15
DQ7
DQ14
DQ6
GND
DQ 13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ 3
DQ 10
DQ 2
VCC
DQ 9
DQ 1
DQ 8
DQ 0
A0
BYTE#
NC
NC
NOTE:
56-lead TSOP Mechanical Diagrams and dimensions are shown at the end of this datasheet.
0528_02
Figure 2. 28F016SV 56-Lead TSOP Pinout Configuration
Shows Compatibility with 28F016SA/28F032SA
13
E
28F016SV FlashFile™ MEMORY
28F016SA
CE0 #
A 12
A 13
A 14
CE0 #
1
A12
A13
A14
2
3
4
A 15
3/5#
A15
3/5#
5
CE1 #
NC
A 20
A 19
A 18
CE1 #
NC
A 20
A 19
A 18
7
8
9
A 17
A 17
A 16
A 16
12
13
VCC
VCC
14
GND
DQ 6
DQ 14
GND
DQ 6
DQ 14
15
DQ 7
DQ 7
DQ 15
RY/BY#
OE#
WE#
WP#
DQ13
28F016SA
VPP
R/P#
A11
A10
A9
A1
A2
56
55
54
53
52
51
50
VPP
R/P#
A11
A10
A9
A1
A2
49
48
A3
A4
A3
A4
47
46
A5
A6
A5
A6
45
A7
A7
44
GND
GND
43
42
A8
VCC
A8
VCC
41
DQ 9
DQ 9
18
40
39
DQ 1
DQ 8
DQ 1
DQ 8
DQ 15
19
38
DQ 0
DQ 0
RY/BY#
OE#
20
21
37
A0
A0
36
BYTE#
BYTE#
WE#
WP#
DQ13
22
23
35
34
NC
NC
NC
NC
24
33
DQ5
DQ5
25
32
DQ2
DQ 10
DQ2
DQ 10
DQ12
DQ12
26
31
DQ 3
DQ 3
DQ4
DQ4
27
30
DQ 11
DQ 11
VCC
VCC
28
29
GND
GND
6
10
11
DA28F016SV
56-LEAD SSOP
STANDARD PINOUT
16 mm x 23.7 mm
TOP VIEW
16
17
NOTE:
56-lead SSOP Mechanical Diagrams and dimensions are shown at the end of this datasheet.
0528_03
Figure 3. 56-Lead SSOP Pinout Configuration
14
E
28F016SV FlashFile™ MEMORY
3.0 MEMORY MAPS
A[20-0]
1FFFFF
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
180000
17FFFF
170000
16FFFF
160000
15FFFF
150000
14FFFF
140000
13FFFF
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
0F0000
0EFFFF
0E0000
0DFFFF
0D0000
0CFFFF
0C0000
0BFFFF
0B0000
0AFFFF
0A0000
09FFFF
090000
08FFFF
080000
07FFFF
070000
06FFFF
060000
05FFFF
050000
04FFFF
040000
03FFFF
030000
02FFFF
020000
01FFFF
010000
00FFFF
000000
A[20-1]
64-Kbyte Block
31
64-Kbyte Block
30
64-Kbyte Block
29
64-Kbyte Block
28
64-Kbyte Block
27
64-Kbyte Block
26
64-Kbyte Block
25
64-Kbyte Block
24
64-Kbyte Block
23
64-Kbyte Block
22
64-Kbyte Block
21
64-Kbyte Block
20
64-Kbyte Block
19
64-Kbyte Block
18
64-Kbyte Block
17
64-Kbyte Block
16
64-Kbyte Block
15
64-Kbyte Block
14
64-Kbyte Block
13
64-Kbyte Block
12
64-Kbyte Block
11
64-Kbyte Block
10
64-Kbyte Block
9
64-Kbyte Block
8
64-Kbyte Block
7
64-Kbyte Block
6
64-Kbyte Block
5
64-Kbyte Block
4
64-Kbyte Block
3
64-Kbyte Block
2
64-Kbyte Block
1
64-Kbyte Block
0
Byte-Wide (x8) Mode
FFFFF
F8000
F7FFF
F0000
EFFFF
E8000
E7FFF
E0000
DFFFF
D8000
D7FFF
D0000
CFFFF
C8000
C7FFF
C0000
BFFFF
B8000
B7FFF
B0000
A8FFF
A8000
A7FFF
A0000
9FFFF
98000
97FFF
90000
8FFFF
88000
87FFF
80000
7FFFF
78000
77FFF
70000
6FFFF
68000
67FFF
60000
5FFFF
58000
57FFF
50000
4FFFF
48000
47FFF
40000
3FFFF
38000
37FFF
30000
2FFFF
28000
27FFF
20000
1FFFF
18000
17FFF
10000
0FFFF
08000
07FFF
00000
32-Kword Block
31
32-Kword Block
30
32-Kword Block
29
32-Kword Block
28
32-Kword Block
27
32-Kword Block
26
32-Kword Block
25
32-Kword Block
24
32-Kword Block
23
32-Kword Block
22
32-Kword Block
21
32-Kword Block
20
32-Kword Block
19
32-Kword Block
18
32-Kword Block
17
32-Kword Block
16
32-Kword Block
15
32-Kword Block
14
32-Kword Block
13
32-Kword Block
12
32-Kword Block
11
32-Kword Block
10
32-Kword Block
9
32-Kword Block
8
32-Kword Block
7
32-Kword Block
6
32-Kword Block
5
32-Kword Block
4
32-Kword Block
3
32-Kword Block
2
32-Kword Block
1
32-Kword Block
0
Word-Wide (x16) Mode
0528_04
Figure 4. 28F016SV Memory Maps (Byte-Wide and Word-Wide Modes)
15
E
28F016SV FlashFile™ MEMORY
3.1 Extended Status Registers Memory Map
A[20-0]
x8 MODE
RESERVED
GSR
RESERVED
A[20-1]
x16 MODE
1F0006H
F8003H
RESERVED
1F0005H
GSR
1F0004H
RESERVED
F8002H
1F0003H
BSR 31
RESERVED
BSR 31
1F0002H
1F0001H
RESERVED
.
.
.
1F0000H
F8001H
RESERVED
RESERVED
.
.
.
010002H
08001H
RESERVED
RESERVED
000006H
RESERVED
000005H
GSR
000004H
RESERVED
000003H
BSR 0
RESERVED
RESERVED
00003H
RESERVED
GSR
00002H
RESERVED
BSR 0
000002H
000001H
000000H
0528_05
Figure 5. Extended Status Register Memory
Map (Byte-Wide Mode)
16
F8000H
RESERVED
RESERVED
00001H
00000H
0528_06
Figure 6. Extended Status Register Memory
Map (Word-Wide Mode)
E
28F016SV FlashFile™ MEMORY
4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
4.1 Bus Operations for Word-Wide Mode (BYTE# = VIH)
Notes
RP#
CE1#
CE0#
OE#
WE#
A1
DQ0–15
RY/BY#
Read
Mode
1,2,7
VIH
VIL
VIL
VIL
VIH
X
DOUT
X
Output Disable
1,6,7
VIH
VIL
VIL
VIH
VIH
X
High Z
X
Standby
1,6,7
VIH
VIL
VIH
VIH
VIH
VIL
VIH
X
X
X
High Z
X
1,3
VIL
X
X
X
X
X
High Z
VOH
4
VIH
VIL
VIL
VIL
VIH
VIL
0089H
VOH
4,8
VIH
VIL
VIL
VIL
VIH
VIH
66A0H
VOH
1,5,6
VIH
VIL
VIL
VIH
VIL
X
DIN
X
Deep Power-Down
Manufacturer ID
Device ID
Write
4.2 Bus Operations for Byte-Wide Mode (BYTE# = VIL)
Mode
Notes
RP#
CE1#
CE0#
OE#
WE#
A0
DQ0–7
RY/BY#
Read
1,2,7
VIH
VIL
VIL
VIL
VIH
X
DOUT
X
Output Disable
1,6,7
VIH
VIL
VIL
VIH
VIH
X
High Z
X
Standby
1,6,7
VIH
VIL
VIH
VIH
VIH
VIL
VIH
X
X
X
High Z
X
Deep Power-Down
Manufacturer ID
Device ID
Write
1,3
VIL
X
X
X
X
X
High Z
VOH
4
VIH
VIL
VIL
VIL
VIH
VIL
89H
VOH
4,8
VIH
VIL
VIL
VIL
VIH
VIH
A0H
VOH
1,5,6
VIH
VIL
VIL
VIH
VIL
X
DIN
X
NOTES:
1. X can be VIH or VIL for address or control pins except for RY/BY#, which is either VOL or VOH.
2. RY/BY# output is open drain. When the WSM is ready, Erase is suspended or the device is in deep power-down mode.
RY/BY# will be at VOH if it is tied to VCC through a resistor. RY/BY# at VOH is independent of OE# while a WSM operation
is in progress.
3. RP# at GND ± 0.2V ensures the lowest deep power-down current.
4. A0 and A1 at VIL provide device manufacturer codes in x8 and x16 modes respectively. A0 and A1 at VIH provide device ID
codes in x8 and x16 modes respectively. All other addresses are set to zero.
5. Commands for erase, data program, or lock-block operations can only be completed successfully when VPP = VPPH1 or
VPP = VPPH2.
6. While the WSM is running, RY/BY# in level-mode (default) stays at VOL until all operations are complete. RY/BY# goes to
VOH when the WSM is not busy or in erase suspend mode.
7. RY/BY# may be at VOL while the WSM is busy performing various operations (for example, a Status Register read during a
program operation).
8. The 28F016SV shares an identical device identifier (66A0H in word-wide mode, A0H in byte-wide mode) with the
28F016SA. See application note AP-393 28F016SV Compatibility with 28F016SA for software and hardware techniques to
differentiate between the 28F016SV and 28F016SA.
17
E
28F016SV FlashFile™ MEMORY
4.3 28F008SA—Compatible Mode Command Bus Definitions
First Bus Cycle
Command
Notes
Read Array
Second Bus Cycle
Oper
Addr
Data(4)
Oper
Addr
Data(4)
Write
X
xxFFH
Read
AA
AD
Intelligent Identifier
1
Write
X
xx90H
Read
IA
ID
Read Compatible Status Register
2
Write
X
xx70H
Read
X
CSRD
Clear Status Register
3
Write
X
xx50H
Word/Byte Program
Write
X
xx40H
Write
PA
PD
Alternate Word/Byte Program
Write
X
xx10H
Write
PA
PD
Block Erase/Confirm
Write
X
xx20H
Write
BA
xxD0H
Erase Suspend/Resume
Write
X
xxB0H
Write
X
xxD0H
ADDRESS
AA = Array Address
BA = Block Address
IA = Identifier Address
PA = Program Address
X = Don’t Care
DATA
AD = Array Data
CSRD = CSR Data
ID = Identifier Data
PD = Program Data
NOTES:
1. Following the Intelligent Identifier command, two Read operations access the manufacturer and device signature codes.
2. The CSR is automatically available after device enters data program, erase, or suspend operations.
3. Clears CSR.3, CSR.4 and CSR.5. Also clears GSR.5 and all BSR.5, BSR.4 and BSR.2 bits. See Status Register
definitions.
4. The upper byte of the data bus (DQ8–15) during command writes is a “Don’t Care” in x16 operation of the device.
18
E
28F016SV FlashFile™ MEMORY
4.4 28F016SV—Performance Enhancement Command Bus Definitions
Command
Mode
Notes
First Bus Cycle
Oper
Addr
Second Bus Cycle
Third Bus Cycle
Data
(13)
Oper
Addr
(13)
Read
RA
GSRD
BSRD
Data
Read Extended
Status Register
1
Write
X
xx71H
Page Buffer Swap
7
Write
X
xx72H
Read Page Buffer
Write
X
xx75H
Read
PBA
PD
Single Load to Page
Buffer
Write
X
xx74H
Write
PBA
PD
Sequential Load to
Page Buffer
Page Buffer Write to
Flash
Two-Byte Program
Oper
Addr
Data
x8
4,6,10
Write
X
xxE0H
Write
X
BCL
Write
X
BCH
x16
4,5,6,10
Write
X
xxE0H
Write
X
WCL
Write
X
WCH
x8
3,4,9,10
Write
X
xx0CH
Write
A0
BC(L,H)
Write
PA
BC(H,L)
x16
4,5,10
Write
X
xx0CH
Write
X
WCL
Write
PA
WCH
x8
3
Write
X
xxFBH
Write
A0
WD(L,H)
Write
PA
WD(H,L)
Write
X
xx77H
Write
BA
xxD0H
Lock Block/Confirm
Upload Status
Bits/Confirm
2
Write
X
xx97H
Write
X
xxD0H
Upload Device
Information/Confirm
11
Write
X
xx99H
Write
X
xxD0H
Write
X
xxA7H
Write
X
xxD0H
Erase All Unlocked
Blocks/Confirm
RY/BY# Enable to
Level-Mode
8
Write
X
xx96H
Write
X
xx01H
RY/BY#
Pulse-On-Write
8
Write
X
xx96H
Write
X
xx02H
RY/BY#
Pulse-On-Erase
8
Write
X
xx96H
Write
X
xx03H
RY/BY# Disable
8
Write
X
xx96H
Write
X
xx04H
RY/BY# Pulse-OnWrite/Erase
8
Write
X
xx96H
Write
X
xx05H
Sleep
12
Write
X
xxF0H
Write
X
xx80H
Abort
ADDRESS
BA = Block Address
PBA = Page Buffer Address
RA = Extended Register Address
PA = Program Address
X = Don’t Care
DATA
AD = Array Data
PD = Page Buffer Data
BSRD = BSR Data
GSRD = GSR Data
WC (L,H) = Word Count (Low, High)
BC (L,H) = Byte Count (Low, High)
WD (L,H) = Write Data (Low, High)
19
E
28F016SV FlashFile™ MEMORY
NOTES:
1. RA can be the GSR address or any BSR address. See Figures 4 and 5 for Extended Status Register memory maps.
2. Upon device power-up, all BSR lock-bits come up locked. The Upload Status Bits command must be written to reflect the
actual lock-bit status.
3. A0 is automatically complemented to load second byte of data. BYTE# must be at VIL.
A0 value determines which WD/BC is supplied first: A0 = 0 looks at the WDL/BCL, A0 = 1 looks at the WDH/BCH.
4. BCH/WCH must be at 00H for this product because of the 256-byte (128-word) Page Buffer size, and to avoid writing the
Page Buffer contents to more than one 256-byte segment within an array block. They are simply shown for future Page
Buffer expandability.
5. In x16 mode, only the lower byte DQ0–7 is used for WCL and WCH. The upper byte DQ8–15 is a don’t care.
6. PBA and PD (whose count is given in cycles 2 and 3) are supplied starting in the fourth cycle, which is not shown.
7. This command allows the user to swap between available Page Buffers (0 or 1).
8. These commands reconfigure RY/BY# output to one of three pulse-modes or enable and disable the RY/BY# function.
9. Program address, PA, is the Destination address in the flash array which must match the Source address in the Page
Buffer. Refer to the 16-Mbit Flash Product Family User’s Manual.
10. BCL = 00H corresponds to a byte count of 1. Similarly, WCL = 00H corresponds to a word count of 1.
11. After writing the Upload Device Information command and the Confirm command, the following information is output at
Page Buffer addresses specified below:
Address
06H, 07H (Byte Mode)
03H (Word Mode)
1EH (Byte Mode)
0FH (DQ0–7)(Word Mode)
1FH (Byte Mode)
0FH (DQ8–15)(Word Mode)
Information
Device Revision Number
Device Revision Number
Device Configuration Code
Device Configuration Code
Device Proliferation Code (01H)
Device Proliferation Code (01H)
A page buffer swap followed by a page buffer read sequence is necessary to access this information. The contents of all
other Page Buffer locations, after the Upload Device Information command is written, are reserved for future implementation
by Intel Corporation. See Section 4.8 for a description of the Device Configuration Code. This code also corresponds to
data written to the 28F016SV after writing the RY/BY# Reconfiguration command.
12. To ensure that the 28F016SV’s power consumption during sleep mode reaches the deep power-down current level, the
system also needs to de-select the chip by taking either or both CE0# or CE1# high.
13. The upper byte of the data bus (DQ8–15) during command writes is a “Don’t Care” in x16 operation of the device.
20
E
4.5
28F016SV FlashFile™ MEMORY
Compatible Status Register
WSMS
ESS
ES
DWS
VPPS
R
R
R
7
6
5
4
3
2
1
0
NOTES:
CSR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
RY/BY# output or WSMS bit must be checked to
determine completion of an operation (erase,
erase suspend, or data program) before the
appropriate Status bit (ESS, ES or DWS) is
checked for success.
CSR.6 = ERASE-SUSPEND STATUS
1 = Erase Suspended
0 = Erase in Progress/Completed
CSR.5 = ERASE STATUS
1 = Error in Block Erasure
0 = Successful Block Erase
If DWS and ES are set to “1” during an erase
attempt, an improper command sequence was
entered. Clear the CSR and attempt the
operation again.
CSR.4 = DATA-WRITE STATUS
1 = Error in Data Program
0 = Data Program Successful
CSR.3 = VPP STATUS
1 = VPP Error Detect, Operation Abort
0 = VPP OK
The VPPS bit, unlike an A/D converter, does not
provide continuous indication of VPP level. The
WSM interrogates VPP’s level only after the Data
Program or Erase command sequences have
been entered, and informs the system if V PP has
not been switched on. VPPS is not guaranteed to
report accurate feedback between VPPLK(max)
and VPPH1(min), between VPPH1(max) and
VPPH2(min) and above VPPH2(max).
CSR.2–0 = RESERVED FOR FUTURE ENHANCEMENTS
These bits are reserved for future use; mask them out when polling the CSR.
21
E
28F016SV FlashFile™ MEMORY
4.6 Global Status Register
WSMS
OSS
DOS
DSS
QS
PBAS
PBS
PBSS
7
6
5
4
3
2
1
0
NOTES:
GSR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
[1]
RY/BY# output or WSMS bit must be checked
to determine completion of an operation (block
lock, suspend, any RY/BY# reconfiguration,
Upload Status Bits, erase or data program)
before the appropriate Status bit (OSS or DOS)
is checked for success.
GSR.6 = OPERATION SUSPEND STATUS
1 = Operation Suspended
0 = Operation in Progress/Completed
GSR.5 = DEVICE OPERATION STATUS
1 = Operation Unsuccessful
0 = Operation Successful or Currently
Running
GSR.4 = DEVICE SLEEP STATUS
1 = Device in Sleep
0 = Device Not in Sleep
MATRIX 5/4
0 0 = Operation Successful or Currently
Running
0 1 = Device in Sleep Mode or Pending
Sleep
1 0 = Operation Unsuccessful
1 1 = Operation Unsuccessful or
Aborted
If operation currently running, then GSR.7 = 0.
If device pending sleep, then GSR.7 = 0.
Operation aborted: Unsuccessful due to Abort
command.
GSR.3 = QUEUE STATUS
1 = Queue Full
0 = Queue Available
GSR.2 = PAGE BUFFER AVAILABLE STATUS
1 = One or Two Page Buffers Available
0 = No Page Buffer Available
The device contains two Page Buffers.
GSR.1 = PAGE BUFFER STATUS
1 = Selected Page Buffer Ready
0 = Selected Page Buffer Busy
Selected Page Buffer is currently busy with WSM
operation
GSR.0 = PAGE BUFFER SELECT STATUS
1 = Page Buffer 1 Selected
0 = Page Buffer 0 Selected
NOTE:
1. When multiple operations are queued, checking BSR.7 only provides indication of completion for that particular block.
GSR.7 provides indication when all queued operations are completed.
22
E
28F016SV FlashFile™ MEMORY
4.7 Block Status Register
BS
BLS
BOS
BOAS
7
6
5
4
BSR.7 = BLOCK STATUS
1 = Ready
0 = Busy
QS
VPPS
VPPL
R
3
2
1
0
NOTES:
[1] RY/BY# output or BS bit must be checked to
determine completion of an operation (block lock,
suspend, erase or data program) before the
appropriate Status bits (BOS, BLS) is checked
for success.
BSR.6 = BLOCK LOCK STATUS
1 = Block Unlocked for Program/Erase
0 = Block Locked for Program/Erase
BSR.5 = BLOCK OPERATION STATUS
1 = Operation Unsuccessful
0 = Operation Successful or
Currently Running
BSR.4 = BLOCK OPERATION ABORT STATUS
1 = Operation Aborted
0 = Operation Not Aborted
MATRIX 5/4
0 0 = Operation Successful or
Currently Running
0 1 = Not a Valid Combination
1 0 = Operation Unsuccessful
1 1 = Operation Aborted
The BOAS bit will not be set until BSR.7 = 1.
Operation halted via Abort command.
BSR.3 = QUEUE STATUS
1 = Queue Full
0 = Queue Available
BSR.2 = VPP STATUS
1 = VPP Error Detect, Operation Abort
0 = VPP OK
BSR.1 = VPP LEVEL
1 = VPP Detected at 5V ± 10%
0 = VPP Detected at 12V ± 5%
BSR.1 is not guaranteed to report accurate
feedback between the VPPH1 and VPPH2 voltage
ranges. Programs and erases with VPP between
VPPLK(max) and VPPH1(min), between
VPPH1(max) and VPPH2(min), and above
VPPH2(max) produce spurious results and should
not be attempted.
BSR.1 was a RESERVED bit on the 28F016SA.
BSR.0 = RESERVED FOR FUTURE ENHANCEMENTS
This bits is reserved for future use; mask it out when polling the BSRs.
NOTE:
1. When multiple operations are queued, checking BSR.7 only provides indication of completion or that particular block.
GSR.7 provides indication when all queued operations are completed.
23
E
28F016SV FlashFile™ MEMORY
4.8 Device Configuration Code
R
R
R
R
7
6
5
4
DCC.2-DCC.0 = RY/BY# CONFIGURATION
(RB2–RB0)
001 = Level Mode (Default)
010 = Pulse-On-Program
011 = Pulse-On-Erase
100 = RY/BY# Disabled
101 = Pulse-On-Program/Erase
R
RB2
RB1
RB0
3
2
1
0
NOTES:
Undocumented combinations of RB2–RB0 are
reserved by Intel Corporation for future
implementations and should not be used.
DCC.7–DCC.3 =
RESERVED FOR FUTURE ENHANCEMENTS
These bits are reserved for future use; mask them out when reading the Device Configuration Code.
Set these bits to “0” when writing the desired RY/BY# configuration to the device.
24
E
28F016SV FlashFile™ MEMORY
5.0 ELECTRICAL SPECIFICATIONS
NOTICE: This is a production datasheet. The
specifications are subject to change without notice. Verify
with your local Intel Sales office that you have the latest
datasheet before finalizing a design.
*WARNING: Stressing the device beyond the “Absolute
Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the
“Operating Conditions” is not recommended and
extended exposure beyond the "Operating Conditions"
may affect device reliability.
5.1 Absolute Maximum Ratings*
Temperature Under Bias ....................0°C to +80°C
Storage Temperature ...................–65°C to +125°C
VCC = 3.3V ± 0.3V Systems
Sym
Parameter
Notes
Min
Max
Units
Test Conditions
Ambient Temperature
TA
Operating Temperature, Commercial
1
0
70
°C
VCC
VCC with Respect to GND
2
–0.2
7.0
V
VPP
VPP Supply Voltage with Respect to GND
2,3
–0.2
14.0
V
V
Voltage on Any Pin (except V CC,VPP) with
Respect to GND
2,5
–0.5
VCC
+ 0.5
V
I
Current into Any Non-Supply Pin
5
± 30
mA
IOUT
Output Short Circuit Current
4
100
mA
VCC = 5V ± 0.5V, 5V ± 0.25V Systems (6)
Sym
Parameter
Notes
Min
Max
Units
Test Conditions
Ambient Temperature
TA
Operating Temperature, Commercial
1
0
70
°C
VCC
VCC with Respect to GND
2
–0.2
7.0
V
VPP
VPP Supply Voltage with Respect to GND
2,3
–0.2
14.0
V
V
Voltage on Any Pin (except V CC,VPP) with
Respect to GND
2,5
–2.0
7.0
V
I
Current into Any Non-Supply Pin
5
± 30
mA
IOUT
Output Short Circuit Current
4
100
mA
NOTES:
1. Operating temperature is for commercial product defined by this specification.
2. Minimum DC voltage is –0.5V on input/output pins. During transitions, this level may undershoot to –2.0V for periods
<20 ns. Maximum DC voltage on input/output pins is VCC + 0.5V which, during transitions, may overshoot to VCC + 2.0V for
periods <20 ns.
3. Maximum DC voltage on VPP may overshoot to +14.0V for periods <20 ns.
4. Output shorted for no more than one second. No more than one output shorted at a time.
5. This specification also applies to pins marked “NC.”
6. 5% VCC specifications refer to the 28F016SV-065 and 28F016SV-070 in its high speed test configuration.
25
E
28F016SV FlashFile™ MEMORY
5.2 Capacitance
For a 3.3V ± 0.3V System:
Sym
Parameter
Notes
Typ
Max
Units
Test Conditions
CIN
Capacitance Looking into an
Address/Control Pin
1
6
8
pF
TA = +25°C, f = 1.0 MHz
COUT
Capacitance Looking into an
Output Pin
1
8
12
pF
TA = +25°C, f = 1.0 MHz
CLOAD
Load Capacitance Driven by
Outputs for Timing Specifications
50
pF
1,2
For 5V ± 0.5V, 5V ± 0.25V System:
Sym
Parameter
Notes
Typ
Max
Units
Test Conditions
CIN
Capacitance Looking into an
Address/Control Pin
1
6
8
pF
TA = +25°C, f = 1.0 MHz
COUT
Capacitance Looking into an
Output Pin
1
8
12
pF
TA = +25°C, f = 1.0 MHz
CLOAD
Load Capacitance Driven by
Outputs for Timing Specifications
100
pF
For VCC = 5V ± 0.5V
30
pF
For VCC = 5V ± 0.25V
1,2
NOTE:
1. Sampled, not 100% tested. Guaranteed by design.
2. To obtain iBIS models for the 28F016SV, please contact your local Intel/Distribution Sales Office.
26
E
28F016SV FlashFile™ MEMORY
2.4
2.0
INPUT
2.0
OUTPUT
TEST POINTS
0.8
0.45
0.8
AC test inputs are driven at VOH (2.4 VTTL) for a Logic “1” and VOL (0.45 VTTL) for a Logic “0.” Input timing begins at VIH
(2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) <10 ns.
0528_07
Figure 7. Transient Input/Output Reference Waveform for
VCC = 5V ± 10% (Standard Testing Configuration)(1)
3.0
INPUT
1.5
TEST POINTS
1.5
OUTPUT
0.0
AC test inputs are driven at 3.0V for a Logic “1” and 0.0V for a Logic “0.” Input timing begins, and output timing ends, at 1.5V.
Input rise and fall times (10% to 90%) <10 ns.
0528_08
Figure 8. Transient Input/Output Reference Waveform for VCC = 3.3V ± 0.3V
and VCC = 5V ± 5% (High Speed Testing Configuration)(2)
NOTES:
1. Testing characteristics for 28F016SV-070 (Standard Testing Configuration) and 28F016SV-080.
2. Testing characteristics for 28F016SV-065/28F016SV-075 and 28F016SV-70 (High Speed Testing Configuration)/
28F016SV-120.
27
E
28F016SV FlashFile™ MEMORY
2.5 ns of 25Ω Transmission Line
From Output
Test
under Test
Point
Total Capacitance = 100 pF
0528_09
Figure 9. Transient Equivalent Testing Load Circuit
(28F016SV-070/-080 at VCC = 5V ± 10%)
2.5 ns of 50 Ω Transmission Line
From Output
Test
under Test
Point
Total Capacitance = 50 pF
0528_10
Figure 10. Transient Equivalent Testing Load Circuit
(28F016SV-075/-120 at VCC = 3.3V ± 0.3V)
2.5 ns of 83 Ω Transmission Line
From Output
Test
under Test
Point
Total Capacitance = 30 pF
0528_11
Figure 11. High Speed Transient Equivalent Testing Load Circuit
(28F016SV-065/-070 at VCC = 5V ± 5%)
28
E
28F016SV FlashFile™ MEMORY
5.3 DC Characteristics
VCC = 3.3V ± 10%V, T A = 0°C to +70°C, –40°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Temp
Sym
Parameter
Notes
Commercial
Min
Typ
Extended
Max
Min
Typ
Max
Units
Test Conditions
ILI
Input Load
Current
1
±1
±1
µA
VCC = VCC Max
VIN = VCC or GND
ILO
Output
Leakage
Current
VCC Standby
Current
1
± 10
± 10
µA
VCC = VCC Max
VOUT = VCC or GND
VCC = VCC Max
CE0#, CE1#, RP# =
VCC ± 0.2V
BYTE#, WP#, 3/5#
= VCC ±0.2V or
GND ± 0.2V
VCC = VCC Max
CE0#, CE1#, RP# =
VIH
BYTE#, WP#, 3/5#
= VIH or VIL
ICCS
ICCD
VCC Deep
Power-Down
Current
ICCR1
VCC Read
Current
1,5
70
130
70
130
µA
1
4
1
4
mA
1
2
10
5
15
µA
1,4,5
40
50
40
55
mA
RP# = GND ± 0.2V
BYTE# = VCC ±
0.2V or GND ±
0.2V
VCC = VCC Max
CMOS: CE0#, CE1#
= GND ± 0.2V,
BYTE# = GND ±
0.2V or VCC ±
0.2V, Inputs =
GND ± 0.2V or
VCC ± 0.2V
TTL: CE0#, CE1# =
VIL, BYTE# = V IL
or VIH, Inputs =
VIL or VIH
f = 8 MHz, I OUT =
0 mA
29
E
28F016SV FlashFile™ MEMORY
5.3 DC Characteristics (Continued)
VCC = 3.3V ± 10%V, T A = 0°C to +70°C, –40°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Temp
Sym
Parameter
Notes
Commercial
Min
Extended
Typ
Max
Min
Typ
Max
Units
Test Conditions
ICCR2
VCC Read
Current
1,4,
5,6
20
30
20
35
mA
VCC = VCC Max
CMOS: CE0#, CE1#
= GND ± 0.2V,
BYTE# = GND ±
0.2V or VCC ±
0.2V, Inputs =
GND ± 0.2V or
VCC ± 0.2V
TTL: CE0#, CE1# =
VIL, BYTE# = V IL
or VIH, Inputs =
VIL or VIH
f = 4 MHz, I OUT =
ICCW
VCC Program
Current for
Word or Byte
1,6
8
12
8
12
mA
VPP = 12V ± 5%
Program in
Progress
8
17
8
17
mA
VPP = 5V ± 10%
Program in
Progress
6
12
6
12
mA
VPP = 12V ± 5%
Block Erase in
Progress
9
17
9
17
mA
VPP = 5V ± 10%
Block Erase in
Progress
1,2
1
4
1
4
mA
1
±1
± 10
±3
± 10
µA
CE0#, CE1# = VIH
Block Erase
Suspended
VPP ≤ VCC
30
200
70
200
µA
VPP > VCC
1
0.2
5
0.2
5
µA
RP# = GND ± 0.2V
0 mA
ICCE
ICCES
VCC Block
Erase
Current
IPPS
VCC Erase
Suspend
Current
VPP Standby/
IPPR
Read Current
IPPD
VPP Deep
Power-Down
Current
30
1,6
E
28F016SV FlashFile™ MEMORY
5.3 DC Characteristics (Continued)
VCC = 3.3V ± 10%V, T A = 0°C to +70°C, –40°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Temp
Sym
IPPW
IPPE
Parameter
Notes
VPP Program
Current for
Word or Byte
1,6
VPP Erase
Current
Commercial
Min
1,6
Typ
Max
10
Extended
Min
Typ
Max
Units
15
10
15
mA
15
25
15
25
mA
4
10
4
10
mA
14
20
14
20
mA
30
200
70
200
µA
IPPES
VPP Erase
Suspend
Current
1
VIL
Input Low
Voltage
6
–0.3
0.8
0.8
V
VIH
Input High
Voltage
6
2.0
VCC
+ 0.3
V
VOL
Output Low
Voltage
6
VCC
+ 0.3
0.4
0.4
V
Test Conditions
VPP = 12V ± 5%
Program in
Progress
VPP = 5V ± 10%
Program in
Progress
VPP = 12V ± 5%
Block Erase in
Progress
VPP = 5V ± 10%
Block Erase in
Progress
VPP = VPPH1 or
VPPH2
Block Erase
Suspended
VCC = VCC Min and
IOL = 4 mA
31
E
28F016SV FlashFile™ MEMORY
5.3 DC Characteristics (Continued)
VCC = 3.3V ± 0.3V, T A = 0°C to +70°C, –40°C to +85°C
3/5# = Pin Set High for 3.3V Operations
Temp
Comm/Ext
Sym
VOH1
Parameter
Output High
Voltage
VOH2
VPPLK
VPPH1
VPPH2
VLKO
VPP Program/Erase
Lock Voltage
VPP during
Program/Erase
Operations
VPP during
Program/Erase
Operations
VCC Program/Erase
Lock Voltage
Notes
Min
6
2.4
VCC–
V
VCC = VCC Min
IOH = –2.0 mA
6
0.2
V
VCC = VCC Min
IOH = –100 µA
3,6
0.0
3
4.5
3
11.4
2.0
Typ
Max
Units
1.5
V
5.0
5.5
V
12.0
12.6
V
Test Conditions
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3V, VPP = 12V or 5V, T = +25°C. These currents
are valid for all product versions (package and speeds).
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases, word/byte programs and lock block operations are inhibited when VPP ≤ VPPLK and not guaranteed in the
ranges between VPPLK(max) and VPPH1(min), between VPPH1 (max) and VPPH2(min) and above VPPH2(max).
4. Automatic Power Savings (APS) reduces ICCR to 3.0 mA typical in static operation.
5. CMOS Inputs are either VCC ± 0.2V or GND ± 0.2V. TTL Inputs are either VIL or VIH.
6. Sampled, but not 100% tested. Guaranteed by design.
32
E
28F016SV FlashFile™ MEMORY
5.4 DC Characteristics
VCC = 5V ± 0.5V, 5V ± 0.25V, T A = 0°C to +70°C, –40°C to +85°C
3/5# = Pin Set Low for 5V Operations
Temp
Sym
Parameter
Notes
Commercial
Min
Typ
Extended
Max
Min
Typ
Max
Units
Test Conditions
ILI
Input Load
Current
1
±1
±1
µA
VCC = VCC Max
VIN = VCC or GND
ILO
Output
Leakage
Current
VCC Standby
Current
1
± 10
± 10
µA
VCC = VCC Max
VOUT = VCC or GND
VCC = VCC Max
CE0#, CE1#, RP# =
VCC ± 0.2V
BYTE#, WP#, 3/5#
= VCC ± 0.2V or
GND ± 0.2V
VCC = VCC Max,
CE0#, CE1#, RP# =
ICCS
1,5
70
130
70
130
µA
2
4
2
4
mA
VIH
BYTE#, WP#, 3/5#
= VIH or VIL
ICCD
VCC Deep
Power-Down
Current
ICCR1
VCC Read
Current
1
2
10
5
15
µA
1,4,5
75
95
75
105
mA
RP# = GND ± 0.2V
BYTE# = VCC ±
0.2V or GND ±
0.2V
VCC = VCC Max
CMOS: CE0#, CE1#
= GND ± 0.2V,
BYTE# = GND ±
0.2V or VCC ±
0.2V, Inputs =
GND ± 0.2V or,
VCC ± 0.2V
TTL: CE0#, CE1# =
VIL, BYTE# = V IL
or VIH, Inputs =
VIL or VIH
f = 10 MHz, I OUT =
0 mA
33
E
28F016SV FlashFile™ MEMORY
5.4 DC Characteristics (Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, T A = 0°C to +70°C, –40°C to +85°C
3/5# = Pin Set Low for 5V Operations
Temp
Sym
Parameter
Notes
Commercial
Min
Extended
Typ
Max
Min
Typ
Max
Units
Test Conditions
ICCR2
VCC Read
Current
1,4,
5,6
45
55
45
60
mA
VCC = VCC Max
CMOS: CE0#, CE1#
= GND ± 0.2V,
BYTE# = GND ±
0.2V or VCC ±
0.2V, Inputs =
GND ± 0.2V or
VCC ± 0.2V
TTL: CE0#, CE1# =
VIL, BYTE# = V IL
or VIH, Inputs =
VIL or VIH
f = 5 MHz, I OUT =
ICCW
VCC Program
Current for
Word or Byte
1,6
25
35
25
35
mA
VPP = 12V ± 5%
0 mA
Program in
Progress
25
40
25
40
mA
VPP = 5V ± 10%
Program in
Progress
ICCE
VCC Block
Erase
Current
1,6
18
25
18
25
mA
VPP = 12V ± 5%
Block Erase in
Progress
20
30
20
30
mA
VPP = 5V ± 10%
Block Erase in
Progress
ICCES
IPPS
IPPR
IPPD
34
VCC Erase
Suspend
Current
VPP Standby
/Read
Current
1,2
2
4
2
4
mA
CE0#, CE1# = VIH
Block Erase
Suspended
VPP ≤ VCC
1
±1
± 10
±3
± 10
µA
30
200
70
200
µA
VPP > VCC
VPP Deep
PowerDown Current
1
0.2
5
0.2
5
µA
RP# = GND ± 0.2V
E
28F016SV FlashFile™ MEMORY
5.4 DC Characteristics (Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, T A = 0°C to +70°C, –40°C to +85°C
3/5# = Pin Set Low for 5V Operations
Temp
Sym
IPPW
IPPE
Parameter
Notes
VPP Program
Current for
Word or Byte
1,6
VPP Block
Erase
Current
Commercial
Min
1,6
Typ
Max
7
Extended
Min
Typ
Max
Units
12
7
12
mA
17
22
17
22
mA
5
10
5
10
mA
16
20
16
20
mA
30
200
30
200
µA
IPPES
VPP Erase
Suspend
Current
1
VIL
Input Low
Voltage
6
–0.5
0.8
0.8
V
VIH
Input High
Voltage
6
2.0
VCC+
0.5
VCC+
0.5
V
Test Conditions
VPP = 12V ± 5%
Program in
Progress
VPP = 5V ± 10%
Program in
Progress
VPP = 12V ± 5%
Block Erase in
Progress
VPP = 5V ± 10%
Block Erase in
Progress
VPP = VPPH1 or
VPPH2
Block Erase
Suspended
35
E
28F016SV FlashFile™ MEMORY
5.4 DC Characteristics (Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0°C to +70°C, –40°C to +85°C
3/5# = Pin Set Low for 5V Operations
Temp
Comm/Extended
Sym
Parameter
Notes
VOL
Output Low Voltage
6
VOH1
Output High
Voltage
6
0.85
VCC
6
VCC –
0.4
3,6
0.0
VOH2
VPPLK
VPPH1
VPPH2
VLKO
VPP Program/Erase
Lock Voltage
VPP during
Program/Erase
Operations
VPP during
Program/Erase
Operations
VCC Program/Erase
Lock Voltage
Min
Typ
Max
Units
0.45
V
VCC = VCC Min
IOL = 5.8 mA
V
VCC = VCC Min
IOH = –2.5 mA
VCC = VCC Min
IOH = –100 µA
1.5
V
4.5
5.0
5.5
V
11.4
12.0
12.6
V
2.0
Test Conditions
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5V, VPP = 12V or 5V, T = 25°C. These currents are
valid for all product versions (package and speeds) and are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a
TTL rise/fall time of <10 ns.
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Block erases, word/byte programs and lock block operations are inhibited when VPP ≤ VPPLK and not guaranteed in the
ranges between VPPLK(max) and VPPH1(min), between VPPH1 (max) and VPPH2(min) and above VPPH2(max).
4. Automatic Power Saving (APS) reduces ICCR to 1 mA typical in Static operation.
5. CMOS Inputs are either VCC ± 0.2V or GND ± 0.2V. TTL Inputs are either VIL or VIH.
6. Sampled, not 100% tested. Guaranteed by design.
36
E
28F016SV FlashFile™ MEMORY
5.5 Timing Nomenclature
All 3.3V system timings are measured from where signals cross 1.5V.
For 5V systems use the standard JEDEC cross point definitions (standard testing) or from where signals
cross 1.5V (high speed testing).
Each timing parameter consists of 5 characters. Some common examples are defined below:
tCE
tELQV time(t) from CE# (E) going low (L) to the outputs (Q) becoming valid (V)
tOE
tGLQV time(t) from OE # (G) going low (L) to the outputs (Q) becoming valid (V)
tACC
tAVQV time(t) from address (A) valid (V) to the outputs (Q) becoming valid (V)
tAS
tAVWH time(t) from address (A) valid (V) to WE# (W) going high (H)
tDH
tWHDX time(t) from WE# (W) going high (H) to when the data (D) can become undefined (X)
Pin Characters
Pin States
A
Address Inputs
H
High
D
Data Inputs
L
Low
Q
Data Outputs
V
Valid
E
CE# (Chip Enable)
X
Driven, but Not Necessarily Valid
F
BYTE# (Byte Enable)
Z
High Impedance
G
OE# (Output Enable)
W
WE# (Write Enable)
P
RP# (Deep Power-Down Pin)
R
RY/BY# (Ready Busy)
V
Any Voltage Level
Y
3/5# Pin
5V
VCC at 4.5V Minimum
3V
VCC at 3.0V Minimum
37
E
28F016SV FlashFile™ MEMORY
5.6 AC Characteristics—Read Only Operations(1)
VCC = 3.3V ± 0.3V, T A = 0°C to +70°C, –40°C to +85°C
Sym
Parameter
Temp
Commercial
Extended
Commercial
Speed
–75
–100
–120
Notes
tAVAV
Read Cycle Time
tAVQV
Address to Output Delay
tELQV
CE# to Output Delay
tPHQV
RP# High to Output
Delay
tGLQV
OE# to Output Delay
tELQX
tEHQZ
tGLQX
tGHQZ
tOH
CE# to Output in Low Z
CE# to Output in High Z
OE# to Output in Low Z
OE# to Output in High Z
Output Hold from
Address, CE# or OE#
Change, Whichever
Occurs First
Min
Max
2
3,8
3
Max
120
ns
100
120
ns
75
85(10)
100
120
ns
480
620
620
ns
45
45
ns
0
0
0
50
30
0
0
3
3,8
Min
75
85(10)
40
3,8
Max
100
75
85(10)
2,8
Min
Units
50
0
20
20
0
0
ns
ns
ns
20
0
ns
ns
tFLQV
tFHQV
BYTE# to Output Delay
3
75
85(10)
100
120
ns
tFLQZ
BYTE# Low to Output in
High Z
3
30
30
30
ns
tELFL
tELFH
CE# Low to BYTE# High
or Low
3,8
5
5
5
ns
Extended Status Register Reads
tAVEL
Address Setup to CE#
Going Low
3,4,
8,9
0
0
0
ns
tAVGL
Address Setup to OE#
Going Low
3,4,9
0
0
0
ns
38
E
28F016SV FlashFile™ MEMORY
5.6 AC Characteristics—Read Only Operations(1) (Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0°C to +70°C, –40°C to +85°C
Temp
Sym
Parameter
Read Cycle Time
tAVQV
Address to Output Delay
tELQV
CE# to Output Delay
Comm/Ext
Speed
–65
–70
–80
VCC
5V ± 5%V
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Notes
tAVAV
Commercial
Min
Max
65
2,8
Min
Max
70
Min
Units
Max
80
ns
65
70
80
ns
65
70
80
ns
400
480(6)
480
ns
35
ns
tPHQV
RP# to Output Delay
tGLQV
OE# to Output Delay
tELQX
CE# to Output in Low Z
3,8
tEHQZ
CE# to Output in High Z
3,8
tGLQX
OE# to Output in Low Z
3
tGHQZ
OE# to Output in High Z
3
tOH
Output Hold from
Address, CE# or OE#
Change, Whichever
Occurs First
tFLQV
BYTE# to Output Delay
3
65
70
80
ns
tFLQZ
BYTE# Low to Output in
High Z
3
25
25
30
ns
tELFL
CE# Low to BYTE#
High or Low
3,8
5
5
5
ns
400(7)
2
3,8
30(6)
35(7)
30
0
0
25
0
0
25
0
15
0
ns
30
0
15
0
ns
ns
20
0
ns
ns
tFHQV
tELFH
Extended Status Register Reads
tAVEL
Address Setup to CE#
Going Low
3,4,8,9
0
0
0
ns
tAVGL
Address Setup to OE#
Going Low
3,4,9
0
0
0
ns
39
28F016SV FlashFile™ MEMORY
E
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements, Figures 7 and 8.
2. OE# may be delayed up to tELQV-tGLQV after the falling edge of CE#, without impacting tELQV.
3. Sampled, not 100% tested. Guaranteed by design
4. This timing parameter is used to latch the correct BSR data onto the outputs.
5. Device speeds are defined as:
65/70 ns at VCC = 5V equivalent to
75 ns at VCC = 3.3V
70/80 ns at VCC = 5V equivalent to
120 ns at VCC = 3.3V
6. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
7. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
8. CEX# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
9. The address setup requirement for Extended Status Register reads must only be met referenced to the falling edge of the
last control signal to become active (CE0#, CE1# or OE#). For example, if CE0# and CE1# are activated prior to OE# for
an Extended Status Register read, specification tAVGL must be met. On the other hand, if either CE0# or CE1# (or both) are
activated after OE#, specification tAVEL must be referenced.
10. Page Buffer Reads only.
40
E
28F016SV FlashFile™ MEMORY
STANDBY
DEVICE AND
ADDRESS SELECTION
VCC POWER-UP
V IH
ADDRESSES (A)
OUTPUTS ENABLED
STANDBY
DATA VALID
VCC POWER-DOWN
ADDRESSES STABLE
VIL
t AVAV
V IH
(1)
CEx# (E)
V IL
t AVEL
t EHQZ
VIH
OE# (G)
t AVGL
V IL
t GHQZ
VIH
WE# (W)
t GLQV
V IL
t ELQV
t
OH
t GLQX
tELQX
VOH
DATA (D/Q)
HIGH Z
VALID OUTPUT
HIGH Z
V OL
t AVQV
5.0V
V CC
GND
t
PHQV
VIH
RP# (P)
V IL
0528_12
NOTE:
CEX # is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
Figure 12. Read Timing Waveforms
41
E
28F016SV FlashFile™ MEMORY
VIH
ADDRESSES STABLE
ADDRESSES (A)
V IL
t AVAV
V IH
(1)
CEx #(E)
V IL
tAVFL = t ELFL
tEHQZ
V IH
t AVEL
OE# (G)
V IL
t GHQZ
t ELFL
t AVGL
VIH
t FLQV = t AVQV
BYTE# (F)
t GLQV
t ELQV
V IL
t
t GLQX
VOH
DATA (DQ0-DQ7)
HIGH Z
t AVQV
VOH
VOL
HIGH Z
DATA
OUTPUT ON
DQ0-DQ7
DATA OUTPUT
VOL
DATA (DQ8-DQ15)
OH
tELQX
HIGH Z
t FLQZ
DATA
OUTPUT
HIGH Z
0528_13
NOTE:
CEX # is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
Figure 13. BYTE# Timing Waveforms
42
E
28F016SV FlashFile™ MEMORY
5.7 Power-Up and Reset Timings
VCC POWER-UP
RP#
(P)
t YHPH
t YLPH
3/5#
5.0V
(Y)
t PLYL
4.5V
3.3V
VCC
0V
(3V,5V)
t PL5V
CE X #
t PHEL3
Address
(A)
t PHEL5
Valid
Valid
t AVQV
t AVQV
Data
(Q)
Valid 5.0V Outputs
Valid 3.3V Outputs
t PHQV
t PHQV
0528_14
Figure 14. VCC Power-Up and RP# Reset Waveforms
Symbol
Parameter
tPLYL
tPLYH
RP# Low to 3/5# Low (High)
tYLPH
tYHPH
3/5# Low (High) to RP# High
tPL5V
tPL3V
Notes
Min
Max
Unit
0
µs
1
2
µs
RP# Low to VCC at 4.5V minimum
(to VCC at 3.0V min or 3.6V max)
2
0
µs
tPHEL3
RP# High to CE# Low (3.3V VCC)
1
405
ns
tPHEL5
RP# High to CE# Low (5V VCC)
1
330
ns
tAVQV
Address Valid to Data Valid for VCC = 5V ± 10%
3
70
ns
tPHQV
RP# High to Data Valid for VCC = 5V ± 10%
3
400
ns
NOTES:
CE0#, CE1# and OE# are switched low after Power-Up.
1. The tYLPH and/or tYHPH times must be strictly followed to guarantee all other read and program specifications for the
28F016SV.
2. The power supply may start to switch concurrently with RP# going low.
3. The address access time and RP# high to data valid time are shown for 5V VCC operation of the 28F016SV-070 (Standard
Test Configuration). Refer to the AC Characteristics-Read Only Operations for 3.3V VCC and 5V VCC (High Speed Test
Configuration) values.
43
E
28F016SV FlashFile™ MEMORY
5.8 AC Characteristics for WE#—Controlled Command Write Operations(1)
VCC = 3.3V ± 0.3V, T A = 0°C to +70°C; –40°C to +85°C
Sym
Parameter
Temp
Commercial
Extended
Commercial
Speed
–75
–100
–120
Notes
tAVAV
Write Cycle Time
tVPWH1,2
VPP Setup to WE#
Going High
tPHEL
Min
Typ
Max
Min
Typ
Max
Min
Typ
Unit
Max
75
100
120
ns
3
100
100
100
ns
RP# Setup to CE#
Going Low
3,7
480
480
480
ns
tELWL
CE# Setup to WE#
Going Low
3,7
0,10(12)
10
10
ns
tAVWH
Address Setup to WE#
Going High
2,6
60
70
75
ns
tDVWH
Data Setup to WE#
Going High
2,6
60
70
75
ns
tWLWH
WE# Pulse Width
60
70
75
ns
tWHDX
Data Hold from WE#
High
2
5
10
10
ns
tWHAX
Address Hold from
WE# High
2
5
10
10
ns
tWHEH
CE# Hold from WE#
High
3,7
5
10
10
ns
tWHWL
WE# Pulse Width High
15
30
45
ns
tGHWL
Read Recovery before
Write
3
0
0
0
ns
tWHRL
WE# High to RY/BY#
Going Low
3
tRHPL
RP# Hold from Valid
Status Register (CSR,
GSR, BSR) Data and
RY/BY# High
3
0
0
0
ns
tPHWL
RP# High Recovery to
WE# Going Low
3
0.480
1
1
µs
tWHGL
Write Recovery before
Read
55
75
95
ns
tQVVL1,2
VPP Hold from Valid
0
0
0
µs
Status Register (CSR,
GSR, BSR) Data and
RY/BY# High
44
3
100
100
100
ns
E
28F016SV FlashFile™ MEMORY
5.8 AC Characteristics for WE#—Controlled Command Write Operations(1)
(Continued)
VCC = 3.3V ± 0.3V, T A = 0°C to +70°C; –40°C to +85°C
Sym
Parameter
tWHQV1
Duration of Program
Operation
tWHQV2
Duration of Block Erase
Operation
Temp
Commercial
Extended
Commercial
Speed
–75
–100
–120
Unit
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
3,4,5,
11
5
9
TBD
5
9
TBD
5
9
TBD
µs
3,4
0.3
0.8
10
0.3
0.8
10
0.3
0.8
10
sec
45
E
28F016SV FlashFile™ MEMORY
5.8 AC Characteristics for WE#—Controlled Command Write Operations(1)
(Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0°C to +70°C, –40°C to +85°C
Temp
Sym
Parameter
–65
–70
–80
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Write Cycle Time
tVPWH1 VPP Setup to WE#
Going High
tVPWH2
Extended
Speed
Notes
tAVAV
Commercial
Min
Typ
Max
Min
Typ
Max
Min
Typ
Unit
Max
65
70
80
ns
3
100
100
100
ns
tPHEL
RP# Setup to CE#
Going Low
3,7
300
480(9)
300(10)
480
ns
tELWL
CE# Setup to WE#
Going Low
3,7
0
0
0
ns
tAVWH
Address Setup to
WE# Going High
2,6
40
50(9)
40(10)
50
ns
tDVWH
Data Setup to
WE# Going High
2,6
40
50(9)
40(10)
50
ns
tWLWH
WE# Pulse Width
40
40(9)
45(10)
50
ns
tWHDX
Data Hold from
WE# High
2
0
0
0
ns
tWHAX
Address Hold from
WE# High
2
5
10
10
ns
tWHEH
CE# Hold from
WE# High
3,7
5
10(9)
5(10)
10
ns
tWHWL
WE# Pulse Width
High
15
30(9)
15(10)
30
ns
tGHWL
Read Recovery
before Write
3
0
0
0
ns
tWHRL
WE# High to
RY/BY# Going
Low
3
tRHPL
RP# Hold from
Valid Status
Register (CSR,
GSR, BSR) Data
and RY/BY# High
3
46
100
0
100
0
100
0
ns
ns
E
28F016SV FlashFile™ MEMORY
5.8 AC Characteristics for WE#—Controlled Command Write Operations(1)
(Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0°C to +70°C, –40°C to +85°C
Temp
Sym
tPHWL
tWHGL
tQVVL1
tQVVL2
Parameter
RP# High
Recovery to WE#
Going Low
Extended
Speed
–65
–70
–80
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Notes
Min
3
0.300
Typ
Max
Min
Typ
Max
1(9)
Min
Typ
Unit
Max
1
µs
0.300(10)
Write Recovery
before Read
VPP Hold from
Commercial
55
60
65
ns
3
0
0
0
µs
3,4,5,
11
4.5
6
TBD
4.5
6
TBD
4.5
6
TBD
µs
3,4
0.3
0.6
10
0.3
0.6
10
0.3
0.6
10
sec
Valid Status
Register (CSR,
GSR, BSR) Data
and RY/BY# High
tWHQV1 Duration of
Program Operation
tWHQV2 Duration of Block
Erase Operation
NOTES:
1. Read timings during program and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, not 100% tested. Guaranteed by design.
4. Program/erase durations are measured to valid Status Register (CSR) Data. VPP = 12V ± 0.6V.
5. Word/byte program operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE# for all command write operations.
7. CEX# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
8. Device speeds are defined as:
65/70 ns at VCC = 5V equivalent to
75 ns at VCC = 3.3V
70/80 ns at VCC = 5V equivalent to
120 ns at VCC = 3.3V
9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
office for more information.
12. Page Buffer Programs only.
47
E
28F016SV FlashFile™ MEMORY
DEEP
POWER-DOWN
WRITE DATA-WRITE OR
ERASE SETUP COMMAND
WRITE VALID ADDRESS
& DATA (DATA-WRITE) OR
ERASE CONFIRM COMMAND
AUTOMATED DATA-WRITE
OR ERASE DELAY
WRITE READ EXTENDED
REGISTER COMMAND
READ EXTENDED
STATUS REGISTER DATA
V
IH
ADDRESSES (A)
V
NOTE 1
IL
A
t
A=RA
IN
t
AVAV
t
READ COMPATIBLE
STATUS REGISTER DATA
WHAX
AVWH
NOTE 3
V
IH
ADDRESSES (A)
V
NOTE 2
IL
A
t
V
t
AVAV
IN
t
AVWH
WHAX
IH
CEx # (E)
V
NOTE 4
IL
t
t
ELWL
WHEH
t
V
OE# (G)
V
IL
t
V
WHGL
IH
t
WHWL
t
WHQV1,2
GHWL
IH
WE# (W)
V
IL
t
t
V
IH
DATA (D/Q)
V
IL
WLWH
t
t
DVWH
HIGH Z
D
IN
WHDX
D
D
IN
t
V
D
IN
D
OUT
IN
PHWL
WHRL
OH
RY/BY# (R)
V
OL
t
V
RHPL
IH
NOTE 5
RP# (P)
V
IL
t
V
V
V
PP
(V)
t
VPWH2
QVVL2
PPH2
PPH1
t
V
PPLK
V IL
VPWH1
NOTE 6
t
QVVL1
NOTE 7
0528_15
NOTES:
1. This address string depicts data program/erase cycles with corresponding verification via ESRD.
2. This address string depicts data program/erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during data program/erase operations.
4. CEX# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.
5. RP# low transition is only to show tRHPL; not valid for above read and program cycles.
6. VPP voltage during program/erase operations valid at both 12V and 5V.
7. VPP voltage equal to or below VPPLK provides complete flash memory array protection.
Figure 15. AC Waveforms for Command Write Operations
48
E
28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations(1)
VCC = 3.3V ± 0.3V, T A = 0°C +70°C, –40°C +85°C
Sym
Parameter
Temp
Commercial
Extended
Commercial
Speed
–80
–100
–120
Typ Max
Notes
tAVAV
Min
Typ Max Min
Typ Max Min
80
100
120
ns
3,7
100
100
100
ns
Write Cycle Time
tVPEH1,2 VPP Setup to CE#
Going High
Unit
tPHWL
RP# Setup to WE#
Going Low
3
480
480
480
ns
tWLEL
WE# Setup to CE#
Going Low
3,7
0
0
0
ns
tAVEH
Address Setup to
CE# Going High
2,6,7
60
70
75
ns
tDVEH
Data Setup to CE#
Going High
2,6,7
60
70
75
ns
tELEH
CE# Pulse Width
7
65
70
75
ns
tEHDX
Data Hold from CE#
High
2,7
10
10
10
ns
tEHAX
Address Hold from
CE# High
2,7
10
30
10
ns
tEHWH
WE# hold from CE#
High
3
5
0
10
ns
tEHEL
CE# Pulse Width
High
7
15
45
ns
tGHEL
Read Recovery
before Write
3
0
0
ns
tEHRL
CE# High to
RY/BY# Going Low
tRHPL
RP# Hold from
Valid Status
Register (CSR,
GSR, BSR) Data
and RY/BY# High
tPHEL
RP# High Recovery
to CE# Going Low
tEHGL
Write Recovery
before Read
3,7
100
0
100
1
100
ns
3
0
75
0
ns
3,7
0.480
0
1
µs
95
ns
55
49
E
28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations(1)
(Continued)
VCC = 3.3V ± 0.3V, T A = 0°C +70°C, –40°C +85°C
Sym
Parameter
tQVVL1,2 VPP Hold from Valid
Status Register
(CSR, GSR, BSR)
Data and RY/BY#
High
Temp
Commercial
Extended
Commercial
Speed
–80
–100
–120
Typ Max Min
Typ Max
Notes
Min
3
0
tEHQV1
Duration of Program 3,4,5,11
Operation
tEHQV2
Duration of Block
Erase Operation
50
3,4
Typ Max Min
Unit
0
µs
5
9
TBD
5
9
TBD
5
9
TBD
µs
0.3
0.8
10
0.3
0.8
10
0.3
0.8
10
sec
E
28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations(1)
(Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0° to +70°C, –40°C to +85°C
Temp
Sym
Parameter
–65
–70
–80
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Write Cycle Time
tVPEH1,2 VPP Setup to CE#
Going High
Extended
Speed
Notes
tAVAV
Commercial
Min
Typ
Max
Min
Typ
Max
Min
Typ
Unit
Max
65
70
80
ns
3,7
100
100
100
ns
tPHWL
RP# Setup to WE#
Going Low
3
300
480(9)
300(10)
480
ns
tWLEL
WE# Setup to CE#
Going Low
3,7
0
0
0
ns
tAVEH
Address Setup to
CE# Going High
2,6,7
40
50(9)
45(10)
50
ns
tDVEH
Data Setup to CE#
Going High
2,6,7
40
50(9)
45(10)
50
ns
tELEH
CE# Pulse Width
7
45
45(9)
50(10)
50
ns
tEHDX
Data Hold from CE#
High
2,7
0
0
0
ns
tEHAX
Address Hold from
CE# High
2,7
10
10
10
ns
tEHWH
WE# Hold from CE#
High
3,7
5
10(9)
5(10)
10
ns
tEHEL
CE# Pulse Width
High
7
15
30(9)
15(10)
30
ns
tGHEL
Read Recovery
before Write
3
0
0
0
ns
tEHRL
CE# High to RY/BY#
Going Low
3,7
tRHPL
RP# Hold from Valid
Status Register
(CSR, GSR, BSR)
Data and RY/BY#
High
3
100
0
100
0
100
0
ns
ns
51
E
28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations(1)
(Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0° to +70°C, –40°C to +85°C
Temp
Sym
Parameter
tPHEL
RP# High Recovery
to CE# Going Low
tEHGL
Write Recovery
before Read
tQVVL1,2 VPP Hold from Valid
Status Register
(CSR, GSR, BSR)
Data at RY/BY# High
tEHQV1
Duration of Program
Operation
tEHQV2
Duration of Block
Erase Operation
Commercial
Extended
Speed
–65
–70
–80
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Typ
Max
Min
Typ
Max
Min
Typ
Unit
Notes
Min
3,7
0.300
1(9)
0.300(10)
1
Max
µs
55
60
65
ns
3
0
0
0
µs
3,4,5,11
4.5
6
TBD
4.5
6
TBD
4.5
6
TBD
µs
3,4
0.3
0.6
10
0.3
0.6
10
0.3
0.6
10
sec
NOTES:
1. Read timings during program and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, not 100% tested. Guaranteed by design.
4. Program/erase durations are measured to valid Status Data. VPP = 12V ± 0.6V.
5. Word/byte program operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE# for all command write operations.
7. CEX# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
8. Device speeds are defined as:
65/70 ns at VCC = 5V equivalent to
75 ns at VCC = 3.3V
70/80 ns at VCC = 5V equivalent to
120 ns at VCC = 3.3V
9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
office for more information.
52
E
DEEP
POWER-DOWN
28F016SV FlashFile™ MEMORY
WRITE VALID ADDRESS
& DATA (DATA-WRITE) OR
ERASE CONFIRM COMMAND
WRITE DATA-WRITE OR
ERASE SETUP COMMAND
AUTOMATED DATA-WRITE
OR ERASE DELAY
WRITE READ EXTENDED
REGISTER COMMAND
READ EXTENDED
STATUS REGISTER DATA
V
IH
ADDRESSES (A)
V
NOTE 1
IL
A
t
A=RA
IN
t
AVAV
t
READ COMPATIBLE
STATUS REGISTER DATA
EHAX
AVEH
V
NOTE 3
IH
ADDRESSES (A)
V
IL
NOTE 2
A
t
V
t
AVAV
IN
t
AVEH
EHAX
IH
WE# (W)
V
IL
t
t
WLEL
EHWH
t
V
OE# (G)
V
IL
t
V
CEx#(E)
V
NOTE 4
IH
DATA (D/Q)
GHEL
IL
ELEH
t
DVEH
HIGH Z
t
D
IN
EHDX
D
D
IN
D
IN
D
OUT
IN
PHEL
t
V
RY/BY# (R)
V
t
EHQV1,2
IL
t
V
t
EHEL
IH
t
V
EHGL
IH
EHRL
OH
OL
t
V
RHPL
IH
NOTE 5
RP# (P)
V
IL
t
V
V
(V)
V
PP
V
V
t
VPEH2
QVVL2
PPH2
PPH1
t
PPLK
NOTE 6
VPEH1
t
QVVL1
IL
NOTE 7
0528_16
NOTES:
1. This address string depicts data program/erase cycles with corresponding verification via ESRD.
2. This address string depicts data program/erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during data program/erase operations.
4. CEX# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.
5. RP# low transition is only to show tRHPL; not valid for above read and write cycles.
6. VPP voltage during program/erase operations valid at both 12V and 5V.
7. VPP voltage equal to or below VPPLK provides complete flash memory array protection.
Figure 16. Alternate AC Waveforms for Command Write Operations
53
E
28F016SV FlashFile™ MEMORY
5.10 AC Characteristics for WE#—Controlled Page Buffer Write Operations(1)
VCC = 3.3V ± 0.3V, T A = 0°C to +70°C, –40°C to +85°C
Sym
tAVWL
Parameter
Temp
Commercial/Extended
Speed
–75, –100, –120
Notes
Min
2
0
Address Setup to WE# Going Low
Typ
Unit
Max
ns
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0°C to +70°C, –40°C to +85°C
Temp
Sym
tAVWL
Parameter
Address Setup to
WE# Going Low
Commercial
Comm/Ext
Speed
–65
–70
–80
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Notes
Min
2
0
Typ
Max
Min
Typ
Max
0
NOTES:
1. All other specifications for WE#—Controlled Write Operations can be found in section 5.8.
2. Address must be valid during the entire WE# low pulse.
3. Device speeds are defined as:
65/70 ns at VCC = 5V equivalent to
75 ns at VCC = 3.3V
70/80 ns at VCC = 5V equivalent to
120 ns at VCC = 3.3V
4. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
5. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
54
Min
0
Typ
Unit
Max
ns
E
28F016SV FlashFile™ MEMORY
V
IH
CEx#
(E)
Note 1
V
IL
t WHEH
t ELWL
V
IH
WE#
(W)
t WHWL
V
t AVWL
IL
t WLWH
t
WHAX
V
IH
ADDRESSES (A)
VALID
V
IL
t DVWH
t WHDX
V
IH
DATA
(D/Q)
V
HIGH Z
DIN
IL
0528_17
NOTE:
1. CEX# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
Figure 17. WE#—Controlled Page Buffer Write Timing Waveforms
(Loading Data to the Page Buffer)
55
E
28F016SV FlashFile™ MEMORY
5.11 AC Characteristics for CE#—Controlled Page Buffer Write Operations(1)
VCC = 3.3V ± 0.3V, T A = 0°C to +70°C, –40°C to +85°C
Sym
tAVEL
Parameter
Temp
Commercial/Extended
Speed
–75, –100, –120
Notes
Min
2,3
0
Address Setup to CE# Going Low
Typ
Unit
Max
ns
VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0°C to +70°C, –40°C to +85°C
Temp
Sym
tAVEL
Parameter
Address Setup to
CE# Going Low
Commercial
Comm/Ext
Speed
–65
–70
–80
VCC
5V ± 5%
5V ± 10%
5V ± 10%
Load
30 pF
50 pF
50 pF
Notes
Min
2,3
0
Typ
Max
Min
0
Typ
Max
Min
0
NOTES:
1. All other specifications for CE#—Controlled Write Operations can be found in Section 5.9.
2. Address must be valid during the entire WE# low pulse.
3. CEX# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
4. Device speeds are defined as:
65/70 ns at VCC = 5V equivalent to
75 ns at VCC = 3.3V
70/80 ns at VCC = 5V equivalent to
120 ns at VCC = 3.3V
5. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
6. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
56
Typ
Unit
Max
ns
E
28F016SV FlashFile™ MEMORY
V
WE#
(W)
IH
V
IL
t EHWH
t WLEL
V
CEx#
(E)
Note 1
IH
t EHEL
V
t AVEL
IL
t ELEH
t
EHAX
V
IH
ADDRESSES (A)
VALID
V
IL
t DVEH
t EHDX
V
IH
DATA
(D/Q)
V
HIGH Z
DIN
IL
0528_18
NOTE:
1. CEx# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high.
Figure 18. CE#—Controlled Page Buffer Write Timing Waveforms
(Loading Data to the Page Buffer)
57
E
28F016SV FlashFile™ MEMORY
5.12 Erase and Word/Byte Program Performance(3,5)
VCC = 3.3V ± 0.3V, V PP = 5V ± 0.5V, TA = 0°C to +70°C
Symbol
Parameter
Notes
Min
Typ(1)
Max
Units
Page Buffer Byte Write Time
2,6,7
TBD
8.0
TBD
µs
Page Buffer Word Write Time
2,6,7
TBD
16.0
TBD
µs
Test Conditions
tWHRH1A
Byte Program Time
2,7
TBD
29.0
TBD
µs
tWHRH1B
Word Program Time
2,7
TBD
35.0
TBD
µs
tWHRH2
Block Program Time
2,7
TBD
1.9
TBD
sec
Byte Prog. Mode
tWHRH3
Block Program Time
2,7
TBD
1.2
TBD
sec
Word Prog. Mode
Block Erase Time
2,7
TBD
1.4
TBD
sec
Full Chip Erase Time
2,7
TBD
44.8
TBD
sec
4
1.0
12
75
µs
4.0
15
80
µs
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
VCC = 3.3V ± 0.3V, V PP = 12V ± 0.6V, T A = 0°C to +70°C
Symbol
Parameter
Notes
Min
Typ(1)
Max
Units
Page Buffer Byte Write Time
2,6,7
TBD
2.2
TBD
µs
Page Buffer Word Write Time
Test Conditions
2,6,7
TBD
4.4
TBD
µs
tWHRH1
Word/Byte Program Time
2,7
5
9
TBD
µs
tWHRH2
Block Program Time
2,7
TBD
0.6
2.1
sec
Byte Prog. Mode
tWHRH3
Block Program Time
2,7
TBD
0.3
1.0
sec
Word Prog. Mode
Block Erase Time
Full Chip Erase Time
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
58
2
0.3
0.8
10
sec
2,7
TBD
25.6
TBD
sec
4
1.0
9
55
µs
4.0
12
60
µs
E
28F016SV FlashFile™ MEMORY
5.12 Erase and Word/Byte Program Performance(3,5) (Continued)
VCC = 5V ± 0.5V, 5V ± 0.25V, V PP = 5V ± 0.5V, T A = 0°C to +70°C
Symbol
Notes
Min
Typ(1)
Max
Units
Page Buffer Byte Write Time
2,6,7
TBD
8.0
TBD
µs
Page Buffer Word Write Time
2,6,7
TBD
16.0
TBD
µs
Parameter
Test Conditions
tWHRH1A
Byte Program Time
2,7
TBD
20
TBD
µs
tWHRH1B
Word Program Time
2,7
TBD
25
TBD
µs
tWHRH2
Block Program Time
2,7
TBD
1.4
TBD
sec
Byte Prog. Mode
tWHRH3
Block Program Time
2,7
TBD
0.85
TBD
sec
Word Prog. Mode
Block Erase Time
2,7
TBD
1.0
TBD
sec
Full Chip Erase Time
2,7
TBD
32.0
TBD
sec
4
1.0
9
55
µs
3.0
12
60
µs
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
VCC = 5V ± 0.5V, 5V ± 0.25V, V PP = 12V ± 0.6V, T A = 0°C to +70°C
Symbol
Notes
Min
Typ(1)
Max
Units
Page Buffer Byte Write Time
2,6,7
TBD
2.1
TBD
µs
Page Buffer Word Write Time
Parameter
Test Conditions
2,6,7
TBD
4.1
TBD
µs
tWHRH1
Word/Byte Program Time
2,7
4.5
6
TBD
µs
tWHRH2
Block Program Time
2,7
TBD
0.4
2.1
sec
Byte Prog. Mode
tWHRH3
Block Program Time
2,7
TBD
0.2
1.0
sec
Word Prog. Mode
Block Erase Time
Full Chip Erase Time
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
2
0.3
0.6
10
sec
2,7
TBD
19.2
TBD
sec
4
1.0
7
40
µs
3.0
10
45
µs
NOTES:
1. +25°C, and nominal voltages.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Specification applies to interrupt latency for single block erase. Suspend latency for erase all unlocked blocks operation
extends the maximum latency time to 270 µs.
5. Sampled, but not 100% tested. Guaranteed by design.
6. Assumes using the full Page Buffer to Program to Flash (256 bytes or 128 words).
7. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
office for more information.
59
E
28F016SV FlashFile™ MEMORY
6.0 MECHANICAL SPECIFICATIONS
048928.eps
Figure 19. Mechanical Specifications of the 28F016SV 56-Lead TSOP Type I Package
Family: Thin Small Out-Line Package
Symbol
Millimeters
Minimum
Nominal
A
1.20
A1
0.050
A2
0.965
0.995
1.025
b
0.100
0.150
0.200
c
0.115
0.125
0.135
D1
18.20
18.40
18.60
E
13.80
14.00
14.20
e
0.50
D
19.80
20.00
20.20
L
0.500
0.600
0.700
N
∅
56
0°
3°
Y
Z
60
Notes
Maximum
5°
0.100
0.150
0.250
0.350
E
28F016SV FlashFile™ MEMORY
a
He
E
R1
A2
b
R2
L1
Detail A
D
A
B
e
1
Y
C A1
See Detail A
0528_20
Figure 20. Mechanical Specifications of the 28F016SV 56-Lead SSOP Type I Package
Family: Shrink Small Out-Line Package
Symbol
Millimeters
Minimum
A
Notes
Nominal
Maximum
1.80
1.90
A1
0.47
0.52
0.57
A2
1.18
1.28
1.38
B
0.25
0.30
0.40
C
0.13
0.15
0.20
D
23.40
23.70
24.00
E
13.10
13.30
13.50
e1
He
0.80
15.70
N
L1
16.00
16.30
56
0.45
0.50
Y
0.55
0.10
a
2°
3°
4°
b
3°
4°
5°
R1
0.15
0.20
0.25
R2
0.15
0.20
0.25
61
E
28F016SV FlashFile™ MEMORY
APPENDIX A
DEVICE NOMENCLATURE AND ORDERING
INFORMATION
Product line designator for all Intel Flash products
E 2 8 F 0 1 6 SV - 0 6 5
Package
DA = Commercial Temp.
56-Lead SSOP
E = Commercial Temp.
56-Lead TSOP
T = Extended Temp.
56-Lead SSOP
Device Density
016 = 16 Mbit
Access Speed (ns)
65 ns (5V, 30 pF), 70 ns (5V), 75 ns (3.3V)
70 ns (5V, 30 pF), 80 ns (5V), 120 ns (3.3V)
Device Type
V = SmartVoltage
Product Family
S = FlashFile™ Memory
0528_21
Valid Combinations
Option
Order Code
VCC = 3.3V ± 0.3V,
50 pF load,
1.5V I/O Levels(1)
VCC = 5V ± 10%,
100 pF load
TTL I/O Levels(1)
VCC = 5V ± 5%, 30
pF load
1.5V I/O Levels(1)
1
E28F016SV 070
E28F016SV-120
E28F016SV-080
E28F016SV-070
2
E28F016SV 065
E28F016SV-075
E28F016SV-070
E28F016SV-065
3
DA28F016SV 070
DA28F016SV-120
DA28F016SV-080
DA28F016SV-070
4
DA28F016SV 065
DA28F016SV-075
DA28F016SV-070
DA28F016SV-065
5
DT28F016SV 080
DT28F016SV-100
DT28F016SV-080
DT28F016SV-080
NOTE:
1. See Section 5.2 for Transient Input/Output Reference Waveforms and Testing Load Circuits.
62
E
28F016SV FlashFile™ MEMORY
APPENDIX B
ADDITIONAL INFORMATION(1,2)
Order Number
Document/Tool
297372
16-Mbit Flash Product Family User’s Manual
290429
28F008SA Datasheet
290490
DD28F032SA 32-Mbit (2 bit x 16, 4 Mbit x 8) FlashFile™ Memory
Datasheet)
292092
AP-357 Power Supply Solutions for Flash Memory
292123
AP-374 Flash Memory Write Protection Techniques
292126
AP-377 16-Mbit Flash Product Family Software Drivers,
28F016SA/28F016SV/28F016XS/28F016XD
292144
AP-393 28F016SV Compatibility with 28F016SA
292159
AP-607 Multi-Site Layout Planning with Intel’s FlashFile™ Components,
Including ROM Capability
292163
AP-610 Flash Memory In-System Code and Data Update Techniques
292165
AB-62 Compiled Code Optimizations for Flash Memories
294016
ER-33 ETOX™ Flash Memory Technology—Insight to Intel’s Fourth
Generation Process Innovation
297508
FLASHBuilder Utility
Contact Intel/Distribution
Sales Office
Flash Cycling Utility
Contact Intel/Distribution
Sales Office
28F016SV iBIS Model
Contact Intel/Distribution
Sales Office
28F016SV VHDL
Contact Intel/Distribution
Sales Office
28F016SV Timing Designer Library Files
Contact Intel/Distribution
Sales Office
28F016SV Orcad and ViewLogic Schematic Symbols
NOTES:
1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should
contact their local Intel or distribution sales office.
2. Visit Intel’s World Wide Web home page at http://www.Intel.com for technical documentation and tools.
63