JIEJIE JST139F-600E 16a triac Datasheet

JIEJIE MICROELECTRONICS CO. , Ltd
JST139 Series 16A TRIACs
Rev.3.0
DESCRIPTION:
JST139 series triacs with low holding and latching
current are especially recommended for use on
middle and small resistance type power load.
12
12
3
3
TO-220C
JST139F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink
2
complying with UL standards (File ref: E252906).
1
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
16
A
VDRM /VRRM
600 and 800
V
3
TO-220F
Insulated
TO-263
T1(1)
T2(2)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Tstg
-40-150
℃
Tj
-40-125
℃
Repetitive peak off-state voltage(Tj=25℃)
VDRM
600/800
V
Repetitive peak reverse voltage(Tj=25℃)
VRRM
600/800
V
Non repetitive surge peak Off-state voltage
VDSM
VDRM + 100
V
Non repetitive peak reverse voltage
VRSM
VRRM + 100
V
IT(RMS)
16
A
ITSM
140
A
I2t
98
A2s
dI/dt
50
A/μs
IGM
2
A
Storage junction temperature range
Operating junction temperature range
TO-220C(TC=100℃)
RMS on-state current
TO-220F(Ins)
(TC=85℃)
TO-263 (TC=110℃)
Non repetitive surge peak on-state current
(tp=20ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
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Average gate power dissipation
PG(AV)
0.5
W
PGM
5
W
Peak gate power
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
Ⅰ-Ⅱ-Ⅲ
IGT
VGT
VGD
VD=VDRM Tj=125℃
RL=3.3KΩ
F
5
10
25
10
25
70
mA
ALL
MAX
1.5
V
ALL
MIN
0.2
V
Ⅰ- Ⅲ
IL
IG=1.2IGT
IH
IT=100mA
VD=2/3VDRM Gate Open Tj=125℃
dV/dt
E
MAX
Ⅳ
VD=12V RL=33Ω
D
Ⅱ- Ⅳ
15
30
40
20
40
60
MAX
10
25
30
mA
MIN
5
10
50
V/μs
MAX
mA
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=20A tp=380μs
VD=VDRM VR=VRRM
Value(MAX)
Unit
Tj=25℃
1.65
V
Tj=25℃
5
μA
Tj=125℃
1
mA
Value
Unit
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
junction to case(AC)
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TO-220C
3.0
TO-220F(Ins)
3.7
TO-263
2.1
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℃/W
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JST139 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J
ST
139
C
-600
E
D:IGT1-3≤5mA IGT4≤10mA
E:IGT1-3≤10mA IGT4≤25mA
F:IGT1-3≤25mA IGT4≤70mA
JieJie Microelectronics Co.,Ltd
600:VDRM /VRRM≥600V
800:VDRM /VRRM≥800V
TRIACs
IT(RMS):16A
F:TO-220F(Ins)
C:TO-220C E:TO-263
PACKAGE MECHANICAL DATA
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JST139 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
E
Millimeters
Min.
A
C2
H
D
L3
F
Φ
Ref.
m
.6m
3
x
Ma
L1
C3
L2
TO-220C
Min.
Typ.
Max.
4.60
0.173
0.181
B
0.70
0.90
0.028
0.035
C
0.45
0.60
0.018
0.024
C2
1.23
1.32
0.048
0.052
C3
2.20
2.60
0.087
0.102
D
8.90
9.90
0.350
0.390
E
9.90
10.3
0.390
0.406
F
6.30
6.90
0.248
0.272
29.8
1.102
2.54
28.0
0.1
3.39
L1
C
Max.
4.40
H
B
Inches
A
G
G
Typ.
1.173
0.133
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
Φ
3.6
Ref.
Millimeters
0.142
Dimensions
E
3.
Min.
A
C2
F
L3
Φ
ax
M
m
5m
H
D
V1
L1
C3
L2
TO-220F Ins
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4.80
0.173
0.80
0.83
0.029
0.75
0.019
Min.
Typ.
Max.
4.40
0.74
C
0.48
C2
2.40
2.70
0.094
0.106
C3
2.60
3.00
0.102
0.118
0.189
0.031
0.033
0.030
D
8.80
9.30
0.346
0.366
E
9.70
10.3
0.382
0.406
F
6.40
7.00
0.252
0.276
29.8
1.102
2.54
28.0
0.1
3.63
L1
L2
G
Max.
A
H
C
Typ.
B
G
B
Inches
0.143
1.70
1.14
1.173
0.045
0.067
L3
3.30
0.130
V1
45°
45°
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FIG.1 Maximum power dissipation versus RMS
on-state current
FIG.2: RMS on-state current versus case
temperature
P(w)
24
IT(RMS) (A)
24
20
20
16
16
12
12
8
8
4
4
0
0
4
8
IT(RMS) (A)
12
16
TO-220C
FIG.3: Surge peak on-state current versus
number of cycles
TO-263
TO-220F(Ins)
Tc (℃)
0
0
20
α=180°
25
50
75
100
125
FIG.4: On-state characteristics (maximum
values)
ITM (A)
ITSM (A)
100
140
t=20ms
One cycle
120
Tj=Tjmax
100
80
10
60
40
Tj=25℃
20
0
1
10
Number of cycles
100
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I t (dI/dt < 50A/μs)
1
0
1
2
VTM (V)
3
4
5
FIG.6: Relative variations of gate trigger current
versus junction temperature
2
ITSM (A), I2t (A2 s)
2000
IGT(Tj) /IGT(Tj=25℃)
4.0
1000
IGT4
ITSM
3.0
IGT3
dI/dt
2.0
I2 t
100
1.0
10
0.01
IGT1&IGT2
tp(ms)
0.1
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10
20
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0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120 140
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JST139 Series
JieJie Microelectronics CO. , Ltd
FIG.7: Relative variations of holding current
versus junction temperature
FIG.8: Relative variations of latching current
versus junction temperature
IH(Tj) /IH(Tj=25℃)
IL(Tj) /IL(Tj=25℃)
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
IH
1.0
1.0
0.5
0.0
-40
IL
0.5
-20
0
20
Tj (℃)
40
60
80
100
120 140
0.0
-40
-20
0
20
Tj (℃)
40
60
80
100
120 140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 10-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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