IRF IRHF57234SE Simple drive requirement Datasheet

PD-93831B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57234SE
250V, N-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHF57234SE 100K Rads (Si)
RDS(on)
0.42Ω
ID
5.2A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-39
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
5.2
3.3
20.8
25
0.2
±20
142
5.2
2.5
6.8
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 ( 0.063 in./1.6mm from case for 10s)
0.98(Typical)
g
For footnotes refer to the last page
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1
08/02/10
IRHF57234SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.31
—
V/°C
—
—
0.42
Ω
2.5
4.0
—
—
—
—
—
—
4.5
—
10
25
V
S
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
32
11
16
25
100
35
40
—
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 3.3A Ã
nC
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 3.3A Ã
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 5.2A
VDS = 125V
ns
VDD = 125V, ID = 5.2A
VGS =12V, RG = 7.5Ω
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1007
155
8
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
5.2
20.8
1.5
287
2.3
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 5.2A, VGS = 0V Ã
Tj = 25°C, IF = 5.2A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
175
5.0
—
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHF57234SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (TO-39)
Diode Forward Voltage
„
Test Conditions
Min
Max
250
2.0
—
—
—
—
4.5
100
-100
10
nA
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS=0V
—
0.402
Ω
VGS = 12V, ID = 3.3A
—
0.42
Ω
VGS = 12V, ID = 3.3A
—
1.5
V
VGS = 0V, ID = 5.2A
V
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
300 ± 7.5%
38 ± 7.5%
250
250
250
250
250
61 ± 5%
330 ± 7.5%
31 ± 10%
250
250
250
250
240
84 ± 5%
350 ± 10%
28 ± 7.5%
250
250
225
175
50
Bias VDS (V)
38 ± 5%
300
250
200
150
100
50
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57234SE
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
Drain-to-SourceCurrent
Current(A)
(A)
I D , I Drain-to-Source
D’
10
1
0.1
5.0V
0.01
0.01
20µs PULSE WIDTH
TJ = 25 °C
0.001
0.1
1
10
10
0.1
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
1
TJ = 25 ° C
0.1
V DS = 15
50V
20µs PULSE WIDTH
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
Fig 2. Typical Output Characteristics
100
7.0
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6.0
5.0V
1
0.01
0.1
100
VDS , Drain-to-Source Voltage (V)
0.01
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
5.4A
ID = 5.2A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
C, Capacitance (pF)
IRHF57234SE
Ciss
1200
Coss
800
Crss
400
0
1
10
VDS = 200V
VDS = 125V
VDS = 50V
15
10
5
0
100
ID = 5.2A
5.4A
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
0.4
20
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
2.4
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1
1ms
10ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
DC
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHF57234SE
Pre-Irradiation
6.0
RD
VDS
VGS
ID , Drain Current (A)
5.0
D.U.T.
RG
+
-V DD
4.0
V GS
3.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS
1.0
90%
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
1
0.10
0.05
PDM
0.02
0.1
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
IRHF57234SE
350
TOP
300
BOTTOM
ID
2.3A
3.3A
5.2A
250
200
150
100
50
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHF57234SE
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 10.5 mH
Peak IL = 5.2A, VGS = 12V
 ISD ≤ 5.2A, di/dt ≤ 307A/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/2010
8
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