IXFA16N50P IXFP16N50P IXFH16N50P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 16A Ω ≤ 400mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 16 35 A A IA EAS TC = 25°C TC = 25°C 16 750 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C 10 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Md FC Mounting Torque Mounting Force Weight TO-263 TO-220 TO-247 G (TAB) D S TO-247 G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) z TJ = 125°C High Power Density Easy to Mount Space Savings V 5.5 V ± 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved z 15 μA 250 μA 400 mΩ Applications z z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99357F(05/09) IXFA16N50P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 9 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 Qgd 16 S 2480 pF 237 pF 18 pF 23 ns 25 ns 70 ns 22 ns 43 nC 15 nC 12 nC TO-220 (IXFP) Outline Pins: 1 - Gate 2 - Drain 0.42 °C/W RthJC RthCH IXFP16N50P IXFH16N50P (TO-220) 0.50 °C/W (TO-247) 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 16A, -di/dt = 100A/μs 200 ns A nC 6.0 0.6 VR = 100V, VGS = 0V TO-247 (IXFH) Outline 1 2 3 ∅P Note 1: Pulse test, t ≤ 300μs; Duty Cycle, d ≤ 2%. TO-263 (IXFA) Outline Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA16N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 20 20 VGS = 10V 8V 18 VGS = 10V 8V 7V 18 16 16 14 ID - Amperes 14 ID - Amperes IXFP16N50P IXFH16N50P 7V 12 10 8 12 10 6V 8 6 6 4 4 6V 2 5V 2 0 0 0 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 12 Fig. 3. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature 16 18 20 18 20 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Drain Current 3.2 2.8 VGS = 10V 2.8 VGS = 10V 2.6 2.4 2.4 R DS(on) - Normalized R DS(on) - Normalized 14 VDS - Volts VDS - Volts I D = 16A 2.0 1.6 I D = 8A 1.2 TJ = 125ºC 2.2 2.0 1.8 1.6 1.4 TJ = 25ºC 1.2 0.8 1.0 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 2 4 6 Fig. 5. Maximum Drain Current vs. Case Temperature 10 12 14 16 Fig. 6. Input Admittance 18 20 16 18 16 14 14 12 ID - Amperes ID - Amperes 8 ID - Amperes TJ - Degrees Centigrade 10 8 6 TJ = 125ºC 25ºC - 40ºC 12 10 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 TJ - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.4 4.8 5.2 5.6 VGS - Volts 6.0 6.4 6.8 7.2 IXFA16N50P IXFP16N50P IXFH16N50P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 28 70 TJ = - 40ºC 24 60 50 25ºC IS - Amperes g f s - Siemens 20 16 125ºC 12 40 30 8 20 4 10 TJ = 125ºC TJ = 25ºC 0 0 0 2 4 6 8 10 12 14 16 18 0.3 20 0.4 0.5 ID - Amperes 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10,000 10 9 VDS = 250V 8 I G = 10mA Capacitance - PicoFarads I D = 8A VGS - Volts 7 6 5 4 3 Ciss 1,000 100 Coss 10 Crss 2 1 f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1.00 100 Z(th)JC - ºC / W ID - Amperes RDS(on) Limit 25µs 0.10 10 100µs 1ms TJ = 150ºC TC = 25ºC Single Pulse 10ms DC 1 10 100 1000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N50P(5J-745)5-1-09-C